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    TRANSISTOR DATA CD Search Results

    TRANSISTOR DATA CD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D
    Murata Manufacturing Co Ltd Data Line Filter, PDF
    NFM15PC755R0G3D
    Murata Manufacturing Co Ltd Feed Through Capacitor, PDF
    NFM15PC435R0G3D
    Murata Manufacturing Co Ltd Feed Through Capacitor, PDF
    NFM15PC915R0G3D
    Murata Manufacturing Co Ltd Feed Through Capacitor, PDF
    MP-52RJ11SNNE-015
    Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-015 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft PDF

    TRANSISTOR DATA CD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PUMF11

    Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor


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    MBD128 PUMF11 OT363 OT323 SC-70) 613514/01/pp7 PUMF11 PDF

    PUMF12

    Abstract: MCE153
    Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor


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    MBD128 PUMF12 OT363 OT323 SC-70) 613514/01/pp7 PUMF12 MCE153 PDF

    B3P68

    Abstract: BC868 BC868-25 BC869 BC869-25 BCP68
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product specification Data supersedes data of 1999 Apr 08 2003 Dec 02 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A


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    M3D109 BC868 BC869 SCA75 R75/06/pp10 B3P68 BC868 BC868-25 BC869 BC869-25 BCP68 PDF

    NEC K 2500

    Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


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    2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


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    2SC3603 2SC3603 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise


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    2SC3587 PDF

    smd code book B3 transistor

    Abstract: PMEM4010ND PMEM4010PD TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD npn MARKING CODE PR
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010ND NPN transistor/Schottky diode module Product specification Supersedes data of 2002 Oct 28 2003 Jul 04 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND


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    M3D302 PMEM4010ND SCA75 613514/02/pp10 smd code book B3 transistor PMEM4010ND PMEM4010PD TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD npn MARKING CODE PR PDF

    TRANSISTOR CW 7808

    Abstract: cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1049 Base station LDMOS transistor Product specification Supersedes data of 2001 Dec 05 2003 May 14 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 FEATURES DESCRIPTION


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    M3D379 BLF1049 OT502A ACPR400 SCA75 613524/03/pp12 TRANSISTOR CW 7808 cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808 PDF

    2SC2150

    Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


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    2SC3604 2SC3604 2SC3603 2SC2150 2SC1223 TRANSISTOR 2sC 5250 micro X PDF

    transistor NEC D 586

    Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise


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    2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500 PDF

    philips Trimmers 60 pf

    Abstract: trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor


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    BLF278 SC08a OT262A1 philips Trimmers 60 pf trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun PDF

    iei-1209

    Abstract: uPA1438 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134
    Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY uPA1438 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1438 is NPN silicon epitaxial D arlington (in millimeters) Power Transistor A rray that built in Surge Absorber and


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    PA1438 uPA1438 tPA1438H IEI-1209) iei-1209 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134 PDF

    c38 transistor

    Abstract: capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 17 Philips Semiconductors Product specification VHF push-pull power MOS transistor


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    BLF378 SC08a OT262A1 c38 transistor capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor PDF

    BLF378

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of 1996 Oct 17 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF378 PINNING - SOT262A1


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    M3D091 BLF378 OT262A1 SCA60 125108/00/03/pp16 BLF378 PDF

    smd JH transistor

    Abstract: transistor smd z3 transistor SMD Z2 smd transistor z4 capacitor tantalum smd Transistor z1 smd CBD46 34S2 MDB150 M3D438
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 2003 Mar 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • Typical 2-tone performance at a supply voltage of 26 V


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    M3D438 BLF1043 SCA75 613524/07/pp12 771-BLF1043 BLF1043 smd JH transistor transistor smd z3 transistor SMD Z2 smd transistor z4 capacitor tantalum smd Transistor z1 smd CBD46 34S2 MDB150 M3D438 PDF

    Contextual Info: MOTOROLA Order this document by MGP7N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP7N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


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    MGP7N60E/D MGP7N60E 21A-09 O-220AB PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    ZO 107 MA

    Abstract: 341S
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low


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    2SC5009 2SC5009 ZO 107 MA 341S PDF

    2sc4571

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4570 2SC4570 SC-70) 4570-T PACK878 PDF

    transistor NEC D 586

    Abstract: TRANSISTOR R46
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


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    2SC4095 2SC4095 VP15-00-1 IR30-00-1 WS60-00-1 transistor NEC D 586 TRANSISTOR R46 PDF

    NEC IC D 553 C

    Abstract: nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal am plifiers from VHF band to UHF band.


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    2SC4095 2SC4095 NEC IC D 553 C nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47 PDF

    BLF872

    Abstract: ez90 rogers 5880 OFDM transmitter UHF EZ90-25-TP
    Contextual Info: BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from


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    BLF872 BLF872 ez90 rogers 5880 OFDM transmitter UHF EZ90-25-TP PDF

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that


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    2SC1926 2SC1275, P11670EJ1V0DS00 PDF