TRANSISTOR D30 Search Results

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

DIODE D29 -08

Abstract: diode D32 D-30 D-32 KD224575 DIODE D29
Contextual Info: f B M o m r KD224575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 75 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

transistor a12t

Abstract: transistor d30
Contextual Info: m N E R B C KD224575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 75 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

Contextual Info: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial

BUK456

Abstract: C055 T0220AB 7ts transistor
Contextual Info: N AflER P H I L I P S / D I S C R E T E b^E D • hbS3=J31 003Qb6S DST » A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: STU/D3055L2 SamHop Microelectronics Corp. Jul.16 2004 ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 4.5V

Contextual Info: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V

d3055

Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V

D3055

Abstract: CJD3055 cev code CJD2955
Contextual Info: Central CJD2955 PNP CJD3055 NPN Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CJD2955, CJ D3055types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a

Contextual Info: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V

D306S

Contextual Info: STU/D306S SamHop Microelectronics Corp. Oct.16,2006 Ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS c ID RDS ON 7 40V 53A (mW) Super high dense cell design for low RDS(ON). Typ Rugged and reliable. @ VGS = 10V

D30N03

Contextual Info: SDU/D30N03L SamHop Microelectronics Corp. JULY, 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS Super high dense cell design for low RDS ON . RDS(ON) (mW ) TYP ID Rugged and reliable. 11.5 @ VGS = 10V 30V TO-252 and TO-251 Package.

Contextual Info: STU/D300S SamHop Microelectronics Corp. Mar 05, 2007 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m W ) Max Rugged and reliable. 24 @ VGS = 10V 30V TO-252 and TO-251 Package.

Contextual Info: Green Product STU/D307S S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS ON (m Ω) Max 9.5 @ VGS=-10V 14 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON).

Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.

Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.

C5239

Contextual Info: STU/D3055L2 SamHop Microelectronics Co rp. Mar.06, 2007 ver1.4 N-Channel Logic Level Enhancement Mode F ield Effect Transistor PRODUCT V DSS FEA TURES SUMMARY ID R DS ON (mW ) Super high dense cell desig n for low R DS(ON). Max Rugged and reliable. 45 @ VGS = 10V

Contextual Info: Green Product STU/D30L01 S a mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ 100V 30A 30 @ VGS=10V Rugged and reliable.

Contextual Info: Green Product STU/D30L01A S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ 100V 30A 30 @ VGS=10V Rugged and reliable.

D3055

Abstract: 1S10M
Contextual Info: S T U/D3055NL S amHop Microelectronics C orp. P reliminary May.28,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

Contextual Info: S T U/D3030NL S amHop Microelectronics C orp. Nov 30 , 2004 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.

D3055L

Abstract: D3055
Contextual Info: S T U/D3055L Green Product S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mΩ) S uper high dense cell design for low R DS (ON ).

d30n02

Contextual Info: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V