D30N03 Search Results
D30N03 Price and Stock
Infineon Technologies AG IPD30N03S4L14ATMA1Power MOSFET, N Channel, 30 V, 30 A, 0.0112 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD30N03S4L14ATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD30N03S4L14ATMA1 | Tape & Reel | 12 Weeks | 2,500 |
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IPD30N03S4L14ATMA1 | Cut Tape | 38,172 | 1 |
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| IPD30N03S4L14ATMA1 | Tape & Reel | 38,172 | 100 |
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IPD30N03S4L14ATMA1 | 22,860 | 1 |
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IPD30N03S4L14ATMA1 | 2,500 |
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IPD30N03S4L14ATMA1 | 13 Weeks | 2,500 |
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SiTime Corporation SIT5156AI-FD-30N0-30.720000XElite Platform Super TCXO 30.72MHz 3V 2.5ppm 10-Pin Surface Mount T/R - Tape and Reel (Alt: SIT5156AI-FD-30N0-30.720000X) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT5156AI-FD-30N0-30.720000X | Tape & Reel | 26 Weeks | 250 |
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SiTime Corporation SIT5156AECFD-30N0-38.400000FElite Platform Super TCXO 38.4MHz 3V 2.5ppm 10-Pin Surface Mount T/R - Tape and Reel (Alt: SIT5156AECFD-30N0-38.400000F) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT5156AECFD-30N0-38.400000F | Tape & Reel | 26 Weeks | 25 |
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SiTime Corporation SIT5156AE-FD-30N0-30.720000YElite Platform Super TCXO 30.72MHz 3V 2.5ppm 10-Pin Surface Mount T/R - Tape and Reel (Alt: SIT5156AE-FD-30N0-30.720000Y) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT5156AE-FD-30N0-30.720000Y | Tape & Reel | 26 Weeks | 1,000 |
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SiTime Corporation SIT5156AE-FD-30N0-38.880000FElite Platform Super TCXO 38.88MHz 3V 2.5ppm 10-Pin Surface Mount T/R - Tape and Reel (Alt: SIT5156AE-FD-30N0-38.880000F) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT5156AE-FD-30N0-38.880000F | Tape & Reel | 26 Weeks | 25 |
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D30N03 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
d30n03
Abstract: 30s1200
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Original |
du/d30n03lo-252o-251o-252aa+3 | |
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Contextual Info: S DU/D30N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ( m W ) ID S uper high dense cell design for low R DS (ON ). Max R ugged and reliable. |
Original |
du/d30n03lo-252o-251o-252aa | |
D30N03Contextual Info: SDU/D30N03L SamHop Microelectronics Corp. JULY, 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS Super high dense cell design for low RDS ON . RDS(ON) (mW ) TYP ID Rugged and reliable. 11.5 @ VGS = 10V 30V TO-252 and TO-251 Package. |
Original |
sdu/d30n03lo-252o-251o-252aa+1 |