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    D30N03 Search Results

    D30N03 Datasheets (1)

    Maplesemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SLD30N03T
    		Maplesemi N-channel 30V 30A Power MOSFET with typical RDS(on) of 7.8 mΩ at VGS = 10 V, low Crss, fast switching, 100% avalanche tested, in D-Pak package. Original PDF
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    D30N03 Price and Stock

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    Rochester Electronics LLC SPD30N03S2L20GBTMA1

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey SPD30N03S2L20GBTMA1 Bulk 22,023 616
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    Infineon Technologies AG IPD30N03S4L09ATMA1

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey () IPD30N03S4L09ATMA1 Cut Tape 18,157 1
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    IPD30N03S4L09ATMA1 Tape & Reel 18,157 2,500
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    IPD30N03S4L09ATMA1 Digi-Reel 18,157 1
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    Avnet Americas IPD30N03S4L09ATMA1 Tape & Reel 9 Weeks 2,500
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    Newark () IPD30N03S4L09ATMA1 Cut Tape 2,788 1
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    IPD30N03S4L09ATMA1 Tape & Reel 2,788 100
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    Rochester Electronics IPD30N03S4L09ATMA1 36,936 1
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    EBV Elektronik IPD30N03S4L09ATMA1 100,000 10 Weeks 2,500
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    Infineon Technologies AG IPD30N03S4L14ATMA1

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey () IPD30N03S4L14ATMA1 Digi-Reel 13,064 1
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    IPD30N03S4L14ATMA1 Cut Tape 13,064 1
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    IPD30N03S4L14ATMA1 Tape & Reel 13,064 2,500
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    Newark () IPD30N03S4L14ATMA1 Cut Tape 39,546 1
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    IPD30N03S4L14ATMA1 Tape & Reel 39,546 100
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    Rochester Electronics IPD30N03S4L14ATMA1 22,860 1
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    TME IPD30N03S4L14ATMA1 2,500
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    EBV Elektronik IPD30N03S4L14ATMA1 10 Weeks 2,500
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    Rochester Electronics LLC SPD30N03S2L07GBTMA1

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey SPD30N03S2L07GBTMA1 Bulk 1,757 337
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    Infineon Technologies AG SPD30N03S2L-10

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey SPD30N03S2L-10 Tape & Reel 2,500
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    Vyrian SPD30N03S2L-10 10,893
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    D30N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    d30n03

    Abstract: 30s1200
    Contextual Info: S DU/D30N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ( m W ) ID S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original     		DU/D30N03L O-252 O-251 O-252AA Tube/TO-252 O-252 d30n03 30s1200 PDF

    Contextual Info: S DU/D30N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ( m W ) ID S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original     		DU/D30N03L O-252 O-251 O-252AA O-252 PDF

    D30N03

    Contextual Info: SDU/D30N03L SamHop Microelectronics Corp. JULY, 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS Super high dense cell design for low RDS ON . RDS(ON) (mW ) TYP ID Rugged and reliable. 11.5 @ VGS = 10V 30V TO-252 and TO-251 Package.


    Original     		SDU/D30N03L O-252 O-251 O-252AA D30N03 PDF