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    D3055L Price and Stock

    onsemi

    onsemi NTD3055L104T4G

    - Tape and Reel (Alt: NTD3055L104T4G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NTD3055L104T4G Tape & Reel 80,000 15 Weeks 2,500
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    Mouser Electronics NTD3055L104T4G 44,680
    • 1 $1.92
    • 10 $1.21
    • 100 $0.80
    • 1000 $0.56
    • 10000 $0.48
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    Newark () NTD3055L104T4G Bulk 14,940 1
    • 1 $1.77
    • 10 $1.12
    • 100 $0.75
    • 1000 $0.58
    • 10000 $0.56
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    NTD3055L104T4G Tape & Reel 2,500
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    • 10000 $0.63
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    NTD3055L104T4G Cut Tape 2,500
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    • 10000 $0.66
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    Bristol Electronics () NTD3055L104T4G 9,788 1
    • 1 $0.86
    • 10 $0.86
    • 100 $0.32
    • 1000 $0.22
    • 10000 $0.22
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    NTD3055L104T4G 116
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    TME NTD3055L104T4G 28 1
    • 1 $1.60
    • 10 $0.94
    • 100 $0.67
    • 1000 $0.51
    • 10000 $0.51
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    ComSIT USA NTD3055L104T4G 1,880
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    Avnet Asia NTD3055L104T4G 15 Weeks 5,000
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    • 10000 $0.26
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    Avnet Silica NTD3055L104T4G 75,000 17 Weeks 2,500
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    EBV Elektronik NTD3055L104T4G 302,500 18 Weeks 2,500
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    Master Electronics NTD3055L104T4G 10,023
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    • 1000 $0.50
    • 10000 $0.45
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    Win Source Electronics NTD3055L104T4G 29,800
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    • 1000 $0.30
    • 10000 $0.27
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    onsemi RFD3055LESM9A

    - Tape and Reel (Alt: RFD3055LESM9A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RFD3055LESM9A Tape & Reel 2,500 24 Weeks 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.28
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    Mouser Electronics RFD3055LESM9A 81,298
    • 1 $1.52
    • 10 $0.93
    • 100 $0.61
    • 1000 $0.41
    • 10000 $0.32
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    Newark () RFD3055LESM9A Tape & Reel 1,184 100
    • 1 -
    • 10 -
    • 100 $0.64
    • 1000 $0.51
    • 10000 $0.49
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    RFD3055LESM9A Cut Tape 1,184 1
    • 1 $1.40
    • 10 $1.40
    • 100 $0.64
    • 1000 $0.51
    • 10000 $0.49
    		Buy Now
    RFD3055LESM9A Tape & Reel 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.38
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    RFD3055LESM9A Cut Tape 2,500
    • 1 -
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    • 100 -
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    • 10000 $0.43
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    RS RFD3055LESM9A Bulk 2 Weeks 10
    • 1 -
    • 10 $1.58
    • 100 $1.42
    • 1000 $1.42
    • 10000 $1.42
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    TME RFD3055LESM9A 1,741 1
    • 1 $0.63
    • 10 $0.48
    • 100 $0.41
    • 1000 $0.36
    • 10000 $0.36
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    Avnet Asia RFD3055LESM9A 24 Weeks 2,500
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    Avnet Silica RFD3055LESM9A 7,500 25 Weeks 2,500
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    EBV Elektronik RFD3055LESM9A 26 Weeks 2,500
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    Master Electronics RFD3055LESM9A 4,600
    • 1 -
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    • 1000 $0.39
    • 10000 $0.30
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    onsemi NTD3055L104-1G

    - Rail/Tube (Alt: NTD3055L104-1G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NTD3055L104-1G Tube 1,050
    • 1 -
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    • 10000 $0.64
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    Bristol Electronics NTD3055L104-1G 100
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    Flip Electronics NTD3055L104-1G 48,750
    • 1 $0.50
    • 10 $0.50
    • 100 $0.50
    • 1000 $0.50
    • 10000 $0.50
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    Vyrian NTD3055L104-1G 6,776
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    onsemi NVD3055L104T4G-VF01

    - Tape and Reel (Alt: NVD3055L104T4G-VF01)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NVD3055L104T4G-VF01 Tape & Reel 2,500
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    onsemi RFD3055LESM

    - Rail/Tube (Alt: RFD3055LESM)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RFD3055LESM Tube 35 Weeks 1,800
    • 1 -
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    Find more D3055L price and stock on Findchips.com

    D3055L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D3055

    Abstract: D3055L
    Contextual Info: S DU/D3055L2 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		du/d3055l2o-252o-251o-252aa+4300mstube/to-252d3055d3055l PDF

    Contextual Info: S T U/D3055L S amHop Microelectronics C orp. Arp,20 2005 ver1.2 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original     		u/d3055lo-252o-251o-252aa+1tube/to-252 PDF

    Contextual Info: S DU/D3055L2 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		du/d3055l2o-252o-251o-252aa+1300ms PDF

    D3055L

    Abstract: D3055
    Contextual Info: S T U/D3055L S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max R ugged and reliable.


    Original     		u/d3055lo-252o-251o-252aa+3tube/to-252d3055ld3055 PDF

    D3055

    Contextual Info: S DU/D3055L2 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) TYP R ugged and reliable. 34 @ V G S = 4.5V


    Original     		du/d3055l2o-252o-251o-252aa+2300msd3055 PDF

    D3055L

    Abstract: D3055
    Contextual Info: S T U/D3055L Green Product S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mΩ) S uper high dense cell design for low R DS (ON ).


    Original     		u/d3055lo-252o-251o-252aa+3tube/to-252d3055ld3055 PDF

    Contextual Info: STU/D3055L2 SamHop Microelectronics Corp. Jul.16 2004 ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 4.5V


    Original     		stu/d3055l2o-252o-251o-252aa+1u/d3055l2 PDF

    Contextual Info: S T U/D3055L2 S amHop Microelectronics C orp. Nov,26 2004 ver1.2 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original     		u/d3055l2o-252o-251o-252aa PDF

    Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.


    Original     		stu/d3055l2-60o-252o-251o-252aa+3300msu/d3055l2-60tube/to-252 PDF

    Contextual Info: S T U/D3055L Green Product S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mΩ) S uper high dense cell design for low R DS (ON ).


    Original     		u/d3055lo-252o-251o-252aa+1tube/to-252 PDF

    Contextual Info: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V


    Original     		stu/d3055l2o-252o-251o-252aa+2u/d3055l2tube/to-252 PDF

    d3055

    Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V


    Original     		stu/d3055l2-60o-252o-251o-252aa+4300msu/d3055l2-60tube/to-252d3055 PDF

    Contextual Info: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V


    Original     		stu/d3055l2o-252o-251o-252aa+1u/d3055l2 PDF

    Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.


    Original     		stu/d3055l2-60o-252o-251o-252aa+2300msu/d3055l2-60 PDF

    D3055

    Contextual Info: S T U/D3055L S amHop Microelectronics C orp. MAR ,09 2005 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original     		u/d3055lo-252o-251o-252aa+2tube/to-252d3055 PDF