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    FLIP ELECTRONICS NTD3055L104-1G

    Power Field-Effect Transistor, 1
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    DigiKey NTD3055L104-1G Tube 48,750 900
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    onsemi NTD3055L104T4G

    MOSFET N-CH 60V 12A DPAK
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    DigiKey () NTD3055L104T4G Tape & Reel 19,614 2,500
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    NTD3055L104T4G Digi-Reel 19,614 1
    • 1 $1.77
    • 10 $1.12
    • 100 $0.75
    • 1000 $0.59
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    NTD3055L104T4G Cut Tape 2,114 1
    • 1 $1.77
    • 10 $1.12
    • 100 $0.75
    • 1000 $0.59
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    Avnet Americas NTD3055L104T4G Tape & Reel 90,000 16 Weeks 2,500
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    Mouser Electronics NTD3055L104T4G 44,726
    • 1 $1.77
    • 10 $0.84
    • 100 $0.75
    • 1000 $0.57
    • 10000 $0.47
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    Newark NTD3055L104T4G Bulk 8,128 1
    • 1 $1.83
    • 10 $1.17
    • 100 $0.78
    • 1000 $0.56
    • 10000 $0.54
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    Bristol Electronics () NTD3055L104T4G 2,836 1
    • 1 $0.86
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    • 100 $0.32
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    NTD3055L104T4G 116
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    TME NTD3055L104T4G 208 1
    • 1 $1.60
    • 10 $0.97
    • 100 $0.68
    • 1000 $0.53
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    ComSIT USA NTD3055L104T4G 1,880
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    NexGen Digital NTD3055L104T4G 6
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    Richardson RFPD NTD3055L104T4G 2,500
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    Chip 1 Exchange NTD3055L104T4G 3,120
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    Avnet Asia NTD3055L104T4G 16 Weeks 5,000
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    Avnet Silica NTD3055L104T4G 75,000 17 Weeks 2,500
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    EBV Elektronik NTD3055L104T4G 302,500 18 Weeks 2,500
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    Maritex NTD3055L104T4G 4,969 1
    • 1 $0.75
    • 10 $0.57
    • 100 $0.40
    • 1000 $0.30
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    Master Electronics NTD3055L104T4G 6,775
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    • 100 $0.82
    • 1000 $0.38
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    Win Source Electronics NTD3055L104T4G 29,800
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    • 1000 $0.30
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    onsemi RFD3055LESM9A

    MOSFET N-CH 60V 11A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () RFD3055LESM9A Tape & Reel 17,054 2,500
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    • 10000 $0.28
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    RFD3055LESM9A Digi-Reel 17,054 1
    • 1 $1.30
    • 10 $0.82
    • 100 $0.54
    • 1000 $0.42
    • 10000 $0.42
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    RFD3055LESM9A Cut Tape 17,054 1
    • 1 $1.30
    • 10 $0.82
    • 100 $0.54
    • 1000 $0.42
    • 10000 $0.42
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    Avnet Americas RFD3055LESM9A Tape & Reel 2,500 24 Weeks 2,500
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    Mouser Electronics RFD3055LESM9A 82,800
    • 1 $1.12
    • 10 $0.61
    • 100 $0.53
    • 1000 $0.38
    • 10000 $0.31
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    Newark () RFD3055LESM9A Cut Tape 1,190 1
    • 1 $1.47
    • 10 $1.47
    • 100 $0.68
    • 1000 $0.51
    • 10000 $0.49
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    RFD3055LESM9A Tape & Reel 1,190 100
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    • 100 $0.68
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    RS RFD3055LESM9A Bulk 2 Weeks 10
    • 1 -
    • 10 $1.58
    • 100 $1.42
    • 1000 $1.42
    • 10000 $1.42
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    TME RFD3055LESM9A 1,755 1
    • 1 $0.57
    • 10 $0.46
    • 100 $0.39
    • 1000 $0.37
    • 10000 $0.37
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    Ameya Holding Limited RFD3055LESM9A 2,107
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    Avnet Asia RFD3055LESM9A 24 Weeks 2,500
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    Avnet Silica RFD3055LESM9A 7,500 25 Weeks 2,500
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    EBV Elektronik RFD3055LESM9A 26 Weeks 2,500
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    Master Electronics RFD3055LESM9A 4,600
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    • 100 $0.54
    • 1000 $0.37
    • 10000 $0.30
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    FLIP ELECTRONICS STD3055L104T4G

    MOSFET N-CH 60V 12A DPAK-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STD3055L104T4G Tape & Reel 10,000 10,000
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    • 10000 $0.08
    		Buy Now

    UMW NTD3055L104T4G

    MOSFET N-CH 60V 12A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () NTD3055L104T4G Cut Tape 956 1
    • 1 $1.21
    • 10 $0.76
    • 100 $0.50
    • 1000 $0.38
    • 10000 $0.38
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    NTD3055L104T4G Digi-Reel 956 1
    • 1 $1.21
    • 10 $0.76
    • 100 $0.50
    • 1000 $0.38
    • 10000 $0.38
    		Buy Now
    Find more D3055L price and stock on Findchips.com

    D3055L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D3055

    Abstract: D3055L
    Contextual Info: S DU/D3055L2 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		DU/D3055L2 O-252 O-251 O-252AA 300ms Tube/TO-252 D3055 D3055L PDF

    Contextual Info: S T U/D3055L S amHop Microelectronics C orp. Arp,20 2005 ver1.2 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original     		U/D3055L O-252 O-251 O-252AA Tube/TO-252 O-252 PDF

    Contextual Info: S DU/D3055L2 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		DU/D3055L2 O-252 O-251 O-252AA 300ms O-252 PDF

    D3055L

    Abstract: D3055
    Contextual Info: S T U/D3055L S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max R ugged and reliable.


    Original     		U/D3055L O-252 O-251 O-252AA Tube/TO-252 O-252 D3055L D3055 PDF

    D3055

    Contextual Info: S DU/D3055L2 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) TYP R ugged and reliable. 34 @ V G S = 4.5V


    Original     		DU/D3055L2 O-252 O-251 O-252AA 300ms D3055 PDF

    D3055L

    Abstract: D3055
    Contextual Info: S T U/D3055L Green Product S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mΩ) S uper high dense cell design for low R DS (ON ).


    Original     		U/D3055L O-252 O-251 O-252AA Tube/TO-252 O-252 D3055L D3055 PDF

    Contextual Info: STU/D3055L2 SamHop Microelectronics Corp. Jul.16 2004 ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 4.5V


    Original     		STU/D3055L2 O-252 O-251 O-252AA U/D3055L2 O-252 PDF

    Contextual Info: S T U/D3055L2 S amHop Microelectronics C orp. Nov,26 2004 ver1.2 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original     		U/D3055L2 O-252 O-251 O-252AA O-252 PDF

    Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.


    Original     		STU/D3055L2-60 O-252 O-251 O-252AA 300ms U/D3055L2-60 Tube/TO-252 PDF

    Contextual Info: S T U/D3055L Green Product S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mΩ) S uper high dense cell design for low R DS (ON ).


    Original     		U/D3055L O-252 O-251 O-252AA Tube/TO-252 O-252 PDF

    Contextual Info: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V


    Original     		STU/D3055L2 O-252 O-251 O-252AA U/D3055L2 Tube/TO-252 O-252 PDF

    d3055

    Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V


    Original     		STU/D3055L2-60 O-252 O-251 O-252AA 300ms U/D3055L2-60 Tube/TO-252 d3055 PDF

    Contextual Info: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V


    Original     		STU/D3055L2 O-252 O-251 O-252AA U/D3055L2 O-252 PDF

    Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.


    Original     		STU/D3055L2-60 O-252 O-251 O-252AA 300ms U/D3055L2-60 O-252 PDF

    D3055

    Contextual Info: S T U/D3055L S amHop Microelectronics C orp. MAR ,09 2005 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original     		U/D3055L O-252 O-251 O-252AA Tube/TO-252 O-252 D3055 PDF