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    TRANSISTOR D20 Search Results

    TRANSISTOR D20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    TRANSISTOR D20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFG135 amplifier

    Abstract: BFG135 BFG135 - BFG135 MBB300
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor


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    bfg135ot223cgy2020gsca50+4647021/1200/01/pp12bfg135 amplifierbfg135 - bfg135mbb300 PDF

    BFR540

    Abstract: MSB003
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a


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    bfr540125006/03/pp16msb003 PDF

    BFG35

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor


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    bfg35ot223msb002125006/03/pp16 PDF

    D2012

    Contextual Info: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


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    d2012 PDF

    transistor d2012

    Abstract: D2012
    Contextual Info: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


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    d2012transistor d2012 PDF

    BFG198

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a


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    bfg198ot223msb002cgy2020g+2sca50647021/1200/01/pp12 PDF

    transistor d2012

    Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
    Contextual Info: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


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    d2012transistor--d2012transistor d2012d2012 transistor+2transistor-d2012transistor equivalent d2012 PDF

    BUJ103AX

    Abstract: BP317 BU1706AX
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


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    buj103axsca60135104/240/02/pp12bp317+1bu1706ax PDF

    BP317

    Abstract: BU1706AX BUJ204AX
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


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    buj204axsca60135104/204/02/pp12bp317+1bu1706ax PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


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    buj103ao220absca60135104/240/02/pp12 PDF

    BUJ204A

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


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    buj204ao220absca60135104/240/02/pp12 PDF

    str 6707

    Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.


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    m3d067bf859o-202mbh794+11sca63115002/00/03/pp8str 6707philips 232108 npn transistoric str 6707to-202 transistor npnbp317d-20097transistor d 2333philips ltd 202 PDF

    transistor BUJ100

    Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
    Contextual Info: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V


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    buj100transistor buj100cfl circuitscfl self-oscillating+6philips cflbuj100 equivalentballast low loss philipsbuj100 transistorbep transistorcfl circuit PDF

    339 marking code SMD transistor

    Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES • Power dissipation comparable to


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    m3d425pdta114eefsc-89ot490+9pdtc114eefsca60115104/00/01/pp8339 marking code smd transistortransistor smd marking code sptransistor smd marking code dkmarking code 03japan transistor5- pin smd ic 358 PDF

    PHC20306

    Abstract: BP317 MS-012AA MAM118
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHC20306 Complementary enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor


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    phc20306sc13bot96-1sca54+4135108/00/01/pp8bp317ms-012aamam118 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS BLV2347 UHF power transistor Objective specification File under Discrete Semiconductors, SC08b Philips Semiconductors 1997 Oct 14 PHILIPS Philips Semiconductors Objective specification UHF power transistor BLV2347 FEATURES PINNING - SOT468A


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    blv2347sc08bot468asca55+1i27067/oo/oi/p PDF

    Philips electrolytic 106 screw

    Abstract: STR aluminium electrolytic capacitor
    Contextual Info: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y


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    rx1214b350ysca53127147/00/02/pp12philips electrolytic 106 screw+1str aluminium electrolytic capacitor PDF

    sot416 marking code 26

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES


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    m3d173pdta123jemam345sc-75+4ot416sca55117047/1200/01/pp8sot416 marking code 26 PDF

    PDTC143XE

    Abstract: PDTA143XE
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES


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    m3d173pdtc143xemam346sc-75+4ot416sca60115104/1200/01/pp8pdta143xe PDF

    BY206

    Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION


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    m3d088bry61mgl167mgc421+7sca63115002/00/03/pp8by206bzy88c8v2bry61 equivalentprogrammable unijunction transistorunijunction application note PDF

    TSP 817

    Abstract: BUK9830-30 PHT6N03LT
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHT6N03LT TrenchMOS transistor Logic level FET Product specification Supersedes data of September 1997 File under Discrete Semiconductors, SC13a November 1997 Philips Semiconductors Product specification TrenchMOS transistor


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    pht6n03ltsc13aot223sca56+3137087/600/02/pp11tsp 817buk9830-30 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES


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    m3d173pdtc123jesc-75ot416+4pdta123jemga893sca56117047/1200/01/pp8 PDF

    MARKING SMD pnp TRANSISTOR ec

    Contextual Info: DISCRETE SEMICONDUCTORS PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor


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    pdtc124xefsca645002/00/02/pp8marking smd pnp transistor ec PDF

    BC337

    Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


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    buk107-50dssc13asca54137087/1200/02/pp12+5bc337bc337-10mosfet 5130bc337 texas4466 8 pin mosfet pin voltage PDF