TRANSISTOR D20 Search Results
TRANSISTOR D20 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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TRANSISTOR D20 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
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bfg135ot223cgy2020gsca50+4 | |
BFR540
Abstract: MSB003
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bfr540125006/03/pp16msb003 | |
BFG35Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor |
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bfg35ot223msb002125006/03/pp16 | |
D2012Contextual Info: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage |
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d2012 | |
transistor d2012
Abstract: D2012
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d2012transistor d2012 | |
BFG198Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a |
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bfg198ot223msb002cgy2020g+2 | |
transistor d2012
Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
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d2012transistor--d2012transistor d2012d2012 transistor+2 | |
BUJ103AX
Abstract: BP317 BU1706AX
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buj103axsca60135104/240/02/pp12bp317+1 | |
BP317
Abstract: BU1706AX BUJ204AX
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buj204axsca60135104/204/02/pp12bp317+1 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
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buj103ao220absca60135104/240/02/pp12 | |
BUJ204AContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for |
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buj204ao220absca60135104/240/02/pp12 | |
str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
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m3d067bf859o-202mbh794+11 | |
transistor BUJ100
Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
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buj100transistor buj100cfl circuitscfl self-oscillating+6 | |
339 marking code SMD transistor
Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358
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m3d425pdta114eefsc-89ot490+9 | |
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PHC20306
Abstract: BP317 MS-012AA MAM118
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phc20306sc13bot96-1sca54+4 | |
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Contextual Info: DISCRETE SEMICONDUCTORS BLV2347 UHF power transistor Objective specification File under Discrete Semiconductors, SC08b Philips Semiconductors 1997 Oct 14 PHILIPS Philips Semiconductors Objective specification UHF power transistor BLV2347 FEATURES PINNING - SOT468A |
OCR Scan |
blv2347sc08bot468asca55+1 | |
Philips electrolytic 106 screw
Abstract: STR aluminium electrolytic capacitor
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OCR Scan |
rx1214b350ysca53127147/00/02/pp12philips electrolytic 106 screw+1 | |
sot416 marking code 26Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES |
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m3d173pdta123jemam345sc-75+4 | |
PDTC143XE
Abstract: PDTA143XE
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m3d173pdtc143xemam346sc-75+4 | |
BY206
Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
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m3d088bry61mgl167mgc421+7 | |
TSP 817
Abstract: BUK9830-30 PHT6N03LT
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pht6n03ltsc13aot223sca56+3 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES |
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m3d173pdtc123jesc-75ot416+4 | |
MARKING SMD pnp TRANSISTOR ecContextual Info: DISCRETE SEMICONDUCTORS PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor |
OCR Scan |
pdtc124xefsca645002/00/02/pp8marking smd pnp transistor ec | |
BC337
Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
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buk107-50dssc13asca54137087/1200/02/pp12+5 | |