TRANSISTOR D 965 AL Search Results

Contextual Info: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)

transistor power rating 5w

Contextual Info: A fa C pM m an A M P com pany C>N Power Transistor, 5W 2.3 GHz PH2323-5 V2.00 Features • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n B ase C o n figu ratio n C lass C O peratio n In terd igitated G e o m e try D iffu sed Em itter B allastin g R esistors

Contextual Info: Infineon i« c h n c I o g i <ií CMY 210 - 880 MHz to 85 MHz D o w n -C o n verte r A p p lic a tio n Note No. 038 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a

VN10KM

Contextual Info: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the

TRANSISTOR 955 E

Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor
Contextual Info: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

Contextual Info: 19-1223; Rev O; 4/97 > k i y i x i > k i Current-Limited, High-Side P-Channe! Sw itches with Therm al Shutdown Genera! Description The MAX891L/MAX892L&#39;s maximum current limits are 500mA and 250mA, respectively. The current limit through the switch is programmed with a resistor from

Buzzer 4khz

Abstract: 1205 transistor buzzer 1205 LC5739 QFP64 p13 transistor OSC XTAL 32.768KHZ transistor 1205 transistor A 1205 12 Y
Contextual Info: Ordering number : ENN*6704 CMOS IC LC5739 4-Bit Microcontroller with LCD Driver Preliminary Overview The LC5739 is a CMOS 4-bit microcontroller that operates on low voltage and very low power consumption. It also contains 4K-byte ROM, 128-byte RAM, LCD drivers and melody function.

1205 transistor

Abstract: buzzer 1205 transistor 1205 alm1
Contextual Info: Ordering number : ENN*6704 CMOS IC LC5739 4-Bit Microcontroller with LCD Driver Preliminary Overview The LC5739 is a CMOS 4-bit microcontroller that operates on low voltage and very low power consumption. It also contains 4K-byte ROM, 128-byte RAM, LCD drivers and melody function.

lm358 current sense

Abstract: lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet
Contextual Info: P W R -N C H 2 0 1 -T-39-»-» 2-Channel MOSFET Array 400 V - 675 mA per channel POWER in t e g r a l s a a a Product Highlights 2 open-drain N-channel MOSFETs per package PWR-NCH201

MC1391P

Abstract: MC1391
Contextual Info: g MOTOROLA MC1391 TV Horizontal Processor The MC1391 provides low -level horizontal sections including phase detector, oscillator and pre-driver. This device was designed for use in all types of television receivers. TV HORIZONTAL PROCESSOR • Internal Shunt Regulator

L42n

Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
Contextual Info: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:

Y2923

Abstract: 2sc 965 transistor b0961 Q62702-S154 lfe10
Contextual Info: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4033 is an epitaxial PNP silicon planar transistor in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistor is particularly intended for

U820 Diode

Abstract: 0555B TDB0555B Diode BAY 61 diode u820 TDB 0555B transistor a965 nf schaltungen darlington bd 645 P430-e11
Contextual Info: S IE M E N S Technische Mitteilung aus dem Bereich Bauelemente -io idun istechnik •Anwendungstechnik *Anwendung , wendungstechr idungstechnik -Anwendungstechnik •An ldt ' ' O idungstechnik *Anwendungstechnik *A 9ndi ' • ' Integrierter Fenster­ diskriminator TCA 965

Contextual Info: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C

16f 676

Abstract: kd 503 transistor LT 5251 transistor KD 503 ccd sharp 13B1 LR36685 RJ24J3AA0PT kd 506 transistor kd 778
Contextual Info: BACK SHARP RJ24J3AA0PT DESCRIPTION The RJ24J3AA0PT is a 1/3.2-type 5.60 mm solidstate image sensor that consists of PN photo­ diodes and CCD s (charge-coupled devices). With approximately 1 310 000 pixels (1 344 horizontal x 971 vertical), the sensor provides a stable highresolution color image.

500 watts amplifier schematic diagram pcb layout

Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Contextual Info: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a

tic6064

Abstract: 850-960MHz
Contextual Info: ERICSSON $ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor D escription The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier

SGM2004M

Abstract: "GaAs N-channel Dual Gate" UA 471 CN sgm2004 100MIL ALSV Sony 104A
Contextual Info: SGM2004M SONY. GaAs N-channel Dual Gate MES FET Description Package Outline Unit : mm SG M 2 00 4M is an N-channel dual gate G aA s M ES F E T for UHF band low-noise am plification. T h is F E T is suitable fo r a wide range of ap p licatio n s including T V tuners, cellular radios

lc 945 p transistor NPN TO 92

Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor
Contextual Info: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.

MAX891L

Abstract: MAX891LEUA MAX892L MAX892LEUA
Contextual Info: 19-1223; Rev 0; 4/97 Current-Limited, High-Side P-Channel Switches with Thermal Shutdown The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side load-switching applications. These switches operate with inputs from 2.7V to 5.5V, making them ideal for

transistor 1201 1203 1205

Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
Contextual Info: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).

Transistor TT 2246

Abstract: TT 2246 transistor tt 2246 2SC2232 transistor tt 2247 tk 2238 2SA969 2236 1F 2SA981 2SA965
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2sc2238

Abstract: 2SC2194 LSOW 2SA953 2SC2002 2SC2003 2SC2235 2SC2236 2SC2239 transistor 2sC2238
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

transistor sd 965

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard ievel FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance