EHT09 Search Results

MIXER GHz

Abstract: B82412-A3820-K FERRITE TOROID CF750
Contextual Info: CF 750 - 250 MHz to 1900 MHz Up-Converter Application Note No. 044 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 Ω the following design rules have

3 to 10 GHz mixer

Abstract: 27 32 GHz Mixer marking code 02 mmic
Contextual Info: 27 - 32 GHz GaAs Mixer MMIC 27 - 32 GHz Mixer Preliminary Data Sheet • • • • • Monolithic Microwave Integrated Circuit MMIC Single Balanced Mixer (coplanar design) Input/Output matched to 50 Ω Frequency range: 27 GHz to 32 GHz Conversion Loss 9 dB @ PLO = 11 dBm

V75 marking

Abstract: MESS smd code Y8s Ansoft Y1 smd y8s smd code ISM2400 ISM450 ISM900 SCT-595
Contextual Info: GaAs MMIC CGY 63 Preliminary Data Sheet • Broadband Driver Amplifier 800 … 2500 MHz • Bluetooth, ISM450, ISM900, ISM2400 • Base Station Driver Amplifier • Single Voltage Supply: 2.7 to 6 V • POUT = 20.0 dBm at VD = 3.2 V (CW) • POUT = 22.0 dBm at VD = 5.0 V (CW)

HEMT Amplifier

Abstract: amplifier TRANSISTOR 12 GHZ MMIC POWER AMPLIFIER hemt "Marking 12" mmic mmic "Marking 12" marking hpa GaAs 12 GHZ gain 2.4 ghZ rf transistor
Contextual Info: 24 - 27 GHz GaAs High Power Amplifier MMIC 24 - 27 GHz HPA Preliminary Data Sheet • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ω • Frequency range: 24 GHz to 27 GHz • Gain > 12 dB • P–1dB > 27 dBm

CMY210

Abstract: cmy 210
Contextual Info: CMY 210 - 233 MHz to 1.9 GHz Up-Converter Application Note No. 036 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a very high input intercept point of typically 25 dBm at 3 V.

MIXER GHz

Abstract: B82412-A3221-K CF750
Contextual Info: CF 750 - 1500 MHz to 130 MHz Down-Converter Application Note No. 042 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 Ω the following design rules have

Q62702-G82

Abstract: w 3425 nf MW-16 rAised cosine
Contextual Info: GaAs MMIC CGY 353 Data Sheet • • • • • 3-stage power amplifier for 3.5 GHz applications Linear Output power 31.0 dBm Gain of 21.0 dB typ. Operating voltage 7.0 V typ. Unconditionally stable MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions!

12RX2

Abstract: marking code V3 V4 MARKING
Contextual Info: GaAs MMIC CSH 410 Target Data Sheet • • • • • • • SP4T for GSM Mobile Phones GaAs PHEMT technology Low insertion loss High IP3 No supply voltage needed Positive operating voltage: 2.7 to 5 V Leadless 16 pin package ESD: Electrostatic discharge sensitive device,

RX2 pin DIAGRAM

Contextual Info: GaAs MMIC CSH 510 Target Data Sheet • • • • • • • SP5T for GSM Mobile Phones GaAs PHEMT technology Low insertion loss High IP3 No supply voltage needed Positive operating voltage: 2.7 to 5 V Leadless 16 pin package ESD: Electrostatic discharge sensitive device,

bond pull test

Abstract: HEMT marking P
Contextual Info: 24 - 27 GHz GaAs High Power Amplifier MMIC 24 - 27 GHz HPA Preliminary Data Sheet • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ω • Frequency range: 24 GHz to 27 GHz • Gain > 12 dB • P–1dB > 27 dBm

Contextual Info: CF 750 - 950 MHz to 75 MHz Down-Converter Application Note No. 043 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 Ω the following design rules have

MDR 68 pin configuration

Abstract: CGY MW cgy180 pae1
Contextual Info: CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT Application Note No. 004 Abstract In the following content a high efficiency GaAs MMIC power amplifier application for DECT is presented. The CGY 180 is characterized on a cost effective and easy to

dual diode mixer

Abstract: Q62702-D1354
Contextual Info: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Contextual Info: GaAs MMIC CGB 91 Target Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match

Contextual Info: 24 - 28 GHz GaAs Doubler MMIC 24 - 28 GHz Doubler Preliminary Data Sheet • • • • • Monolithic Microwave Integrated Circuit MMIC Frequency Doubler (coplanar design) Input/Output matched to 50 Ω Input frequency range: 12 GHz to 14 GHz Output frequency range: 24 GHz to 28 GHz

Contextual Info: GaAs MMIC CGY 96 Data Sheet • • • • • • Power amplifier for GSM class 4 phones 3.2 W 35 dBm output power at 3.5 V Overall power added efficiency 50% Fully integrated 3 stage amplifier Power ramp control Input matched to 50 Ω, simple output match

RF FET TRANSISTOR 3 GHZ

Abstract: gaas fet marking a
Contextual Info: 24 - 27 GHz GaAs Mixer MMIC 24 - 27 GHz Mixer Preliminary Data Sheet • • • • • • Monolithic Microwave Integrated Circuit MMIC Single Balanced Mixer (coplanar design) Two IF ports allow the use of the MMIC as up- and down-converter with high LO-RF isolation

marking m5S

Abstract: smd code marking C8 SCT-598-8-1 966 MHz
Contextual Info: GaAs MMIC CMY 212 Data Sheet • Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications • Typical overall performance at cellular frequencies for PLO = – 4 dBm operation conditions: 3 V, 11 mA; fRF = 881 MHz; fLO = 966 MHz :

Contextual Info: CMY 210 - 1960 MHz to 110 MHz Down-Converter Application Note No. 037 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a very high input intercept point of typically + 25 dBm at 3 V.

TRANSISTOR SMD MARKING CODE TX

Abstract: smd code book transistor smd rf transistor marking 210p EHT09254 MMIC SOT 363 marking CODE 06
Contextual Info: GaAs MMIC CSH 210P Target Data Sheet • • • • • • • TX/RX- and diversity switch for mobile communications GaAs PHEMT technology Low insertion loss High IP3 No supply voltage needed Positive operating voltage range: 2.7 to 5 V P-SOT363-6-1 package 2 mm x 2 mm

Contextual Info: CSY 240 - Bidirectional GaAs SPDT Switch with Positive 3 V 5 V Switching Supply Application Note No. 046 With its low insertion loss, high Tx/Rx-isolation and high input power capabiltiy in the 0.5 - 3.5 GHz range the CSY 240 is a fast GaAs-switch for Tx/Rx- and diversity switch

Contextual Info: Infineon i« c h n c I o g i <ií CMY 210 - 880 MHz to 85 MHz D o w n -C o n verte r A p p lic a tio n Note No. 038 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a

sot39

Contextual Info: GaAs Components In fineon ftschnu'ogtas Package Information 5 Package Information Discrete and BF Semiconductors Packages Manufacturer EH s CD Date code Year/Month Type code Example > O « = ElH 1994, June • BCW 66 H Manufacturer WVI s Type code Example

Infineon CF750

Contextual Info: Infineon techn e;!o g i aï CF 750 - 950 MHz to 75 MHz Down-Converter Application Note No. 043 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 £2 the following design rules have