TRANSISTOR D 880 Search Results

MTD8000M3B-T

Contextual Info: Photo Transistor Product No: M T D 8 000M3B-T Peak Sensitivity Wavelength: 880nm The MTD8000M3B-T is a photo transistor in a ceramic package. It is well suited for high reliability and high sensitivity applications. FEATURES APPLICATIONS > High Reliability in Demanding Environments

NPN transistor 2n2222 Zin

Abstract: 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1
Contextual Info: O rder th is data sheet by MRF858/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e MRF858 NPN Silicon RF Power Transistor M otorola P referre d D evice CLASS A 8 00-960 MHz 3.6 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

Contextual Info: N AMER PHILIPS/DISCRETE ObE D b b s a ^ i O D 1S171 a - - DEVELOPMENT DATA 11 This data sheet contains advance information and specifications are subject to change without notice. RX1011B350Y T ? 3 3 ' I G - PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C

Contextual Info: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,

microstripline

Abstract: acrian RF POWER TRANSISTOR 8mob5 VCC125 ACRIAN transistor 835 A1W TRANSISTOR 8008-6 8MOB15 8MOB25
Contextual Info: ^ 0 1 8 2 .9 9 8 ':, A C R I AN A Ï NC*; GENERAL »E D 0 0 1 3 S ti D E SC R IP TIO N The 8MOB25 is an internally matched, common base transistor capable of providing 25 Watts of CW RF output power at 835 MHz. This transistor is specifically designed for cellular radio amplifier

Contextual Info: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is

Ericsson RF POWER TRANSISTOR

Contextual Info: ERICSSON ^ PTB 20017 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor D escription The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it

20006

Contextual Info: ERICSSON ^ PTB 20006 4 Watts, 860-900 MHz Cellular Radio RF Power Transistor D escription The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for

Contextual Info: ERICSSON ^ PTB 20004 50 Watts, 860-900 MHz Cellular Radio RF Power Transistor D escription The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it may be used for

transistor motorola 114-8

Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
Contextual Info: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

Contextual Info: ERICSSON ^ PTB 20195 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor D escription The 20195 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20005 15 Watts, 860-900 MHz Cellular Radio RF Power Transistor D escription The 20005 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 15 watts minimum output power, it may be used for

Contextual Info: ERICSSON ^ PTB 20134 30 Watts, 860-900 MHz Cellular Radio RF Power Transistor D escription The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications.

V24B

Contextual Info: HEWLETT-PACKARD/ m CMPNTS blE H EW LETT PA C K A R D J> m 4447S6M 4 Û4 • H P A Power Flange Features • • • • • • 000^7^4 ASP-0910 10 Watt, 900 MHz Silicon Power Transistor Power Out: 10 Watts Common Base Class C Power Transistor Frequency: 800-960 MHz

Contextual Info: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell

Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> bb53^31 D O Sm ^Q ^12 IAPX BLW 90 Jl U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f, range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

motorola 15N 06VL

Abstract: 15N 50 mosfet 15N06VL
Contextual Info: MOTOROLA Order this document by MTD15N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T D 15N 0 6V L TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on “ 0.085 OHM N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA O rder this docum ent by M TD15N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD15N06VL TMOS V™ Power Field Effect Transistor DPAK for S urface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.085 OHM N-Channel Enhancement-Mode Silicon Gate

transistor j37

Contextual Info: MOTOROLA O rder this docum ent by MRF557/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF557 D esigned p rim a rily for w id e b a n d large sig n a l p re d riv e r s ta g e s in th e 800 MHz frequency range. • Specified a 12.5 V, 870 MHz Characteristics

MRF858S

Abstract: ic 0941 358E-06 ic 319A transistor motorola 351 BD136 MMBT2222ALT1 250UF
Contextual Info: MOTOROLA Order this document by MRF858S/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the

J297

Abstract: mallory 150 series MRF899 BD136 5659065-3B
Contextual Info: MOTOROLA Order this document by MRF899/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating

MRF860

Contextual Info: MOTOROLA Order this document by MRF860/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF860 Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the

s21127

Contextual Info: MOTOROLA Order this document by MRF859S/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF859S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the