TRANSISTOR D 588 Search Results

transistor t05

Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Contextual Info: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A

BST72A

Contextual Info: BST72A JV _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers.

BUK657-500B

Abstract: fet N-Channel transistor 250V DS Transistor TL 31 AC
Contextual Info: N AMER PHILIPS/DISCRETE hTE D ^53^31 0030AT0 Efll • APX Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

MS-026

Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

audio output TRANSISTOR PNP

Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4 MS-026
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

TRANSISTOR D 1785

Abstract: audio output TRANSISTOR PNP MS-026 TL1466I TL1466IPM
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

MS-026

Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

audio output TRANSISTOR PNP

Abstract: MS-026 TL1466I TL1466IPM TL1466IPMR
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

MGY40N60

Abstract: motorola 6810
Contextual Info: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

MJ 6810

Abstract: motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810
Contextual Info: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BUK657-500B

Abstract: T0220AB transistor D 587
Contextual Info: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: bRE D N AflER P H I L I P S / D I S C R E T E m bb53R31 QQ30fl^0 P h ilip s S e m ic o n d u c to rs P ro d u c t S p e c ific a tio n Pow erM O S transistor Fast recovery diode F E T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BFT25

Abstract: bft25 transistor
Contextual Info: N AMER P H I L I P S / D I S C R E T E ^53^31 o o ia is i b 'l BSE D J BFT25 T - 3 I -|7 N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope, primarily intended for use in u.h.f. low power amplifiers in thick and thin-film circuits, such as in pocket phones, paging systems, etc. The transistor features

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

613 GB 123 CT

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S

BUY89

Contextual Info: N AflER PHILIPS/DISCRETE SSE D bt.s3T3i o o m a s t BUY89 J V T*-3 3 -1 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a TO-3 envelope especially intended for use in A C motor control systems from three-phase mains.

2N3214

Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044
Contextual Info: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~|efli|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883