TRANSISTOR D 588 Search Results

transistor t05

Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Contextual Info: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A

BST72A

Contextual Info: BST72A JV _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers.

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

audio output TRANSISTOR PNP

Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4 MS-026
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

MS-026

Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

audio output TRANSISTOR PNP

Abstract: MS-026 TL1466I TL1466IPM TL1466IPMR
Contextual Info: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz

motorola 6810

Abstract: MJ 6810 MGY40N60
Contextual Info: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

MGY40N60

Abstract: motorola 6810
Contextual Info: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BUK657-500B

Abstract: T0220AB transistor D 587
Contextual Info: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: bRE D N AflER P H I L I P S / D I S C R E T E m bb53R31 QQ30fl^0 P h ilip s S e m ic o n d u c to rs P ro d u c t S p e c ific a tio n Pow erM O S transistor Fast recovery diode F E T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

613 GB 123 CT

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S

BUY89

Contextual Info: N AflER PHILIPS/DISCRETE SSE D bt.s3T3i o o m a s t BUY89 J V T*-3 3 -1 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a TO-3 envelope especially intended for use in A C motor control systems from three-phase mains.

2N3214

Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044
Contextual Info: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~|efli|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883

BFQ32M

Abstract: transistor D 587 BFQ63 GHz PNP transistor
Contextual Info: Product specification Philips Sem iconductors PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL ' / 5 bE D • 711062b BFQ32M □□•4 S 4 3 Q 3 3 T ■ P H IN PINNING DESCRIPTION PNP transistor In a TO-72 metal envelope with insulated electrodes and a shield lead connected to the

nec hf 324

Abstract: transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 2SC5338 transistor lc 7822 c
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF am plifier with an operation on the low supply

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

BUK475-400B

Abstract: LD25C BUK475 3909
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode

2N4342

Abstract: 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039
Contextual Info: 2048352 "DÌÒDÈ fRANSI STÖR 'cÒ INC 840 00137 D r a aaMê 3 sa 000D137 1 -17 r. -DIODE TRANSISTOR CÜ.ÍWC. T PNPTO-66 » i o d e ’ ransis‘ tor co inc 201 689-0400 « T e le x; 139485 • Outside NY & NJ area call T O L L F R E E 800-526-4581 jF A X No. 201-575-5883

2SA1588

Abstract: 2SC4118 A1588
Contextual Info: TOSHIBA 2SA1588 2 S A 1 588 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • Excellent hpE Linearity : hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA