TRANSISTOR D 467 Search Results

sn75465

Abstract: 75468
Contextual Info: SN75465 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS D 2 6 2 S , DECEMBER 1 9 7 6 -R E V IS E D SEPTEMBER 1 9 8 6 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR A RRA YS 500-mA Rated Collector Current Single Output D OR N P A C K A G E (TO P VIEW ) High-Voltage Outputs . . . 100 V

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

2N4403

Abstract: 2N4402 transistor 2n4403 transistor 3050 JL003 4403 transistor
Contextual Info: 2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Veto =40V • C o llector D issipation: Pc <max =625mW ABSOLUTE MAXIMUM RATINGS Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

BUK637-600A

Abstract: BUK637-600B BUK637-600C BUK637
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D • ^ 5 3 = 1 3 1 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

7B468

Abstract: 7B465 76465 75469 sn75466 sn75465
Contextual Info: SN75465 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS D 2 6 2 5 , DECEMBER 1 9 7 6 -REVISED SEPTEMBER 1 9 8 6 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRA YS 500-mA Rated Collector Current Single Output D OR N P A C K A G E (TO P V IEW ! • High-Voltage Outputs . . . 100 V

k 246 transistor fet

Abstract: 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • ^53=131 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 Q020bfl5 4 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-600A BUK637-600B BUK637-600C T ' - 3 cM £ ' _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

K545

Abstract: BUK545 BUK545-200A BUK545-200B
Contextual Info: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: N AMER PHILIPS/DISCRETE PowerM OS transistor ObE D • bbBBTBl 0014760 1 B U Z 33T T - 3<M3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BF419

Contextual Info: BF419 _ HIGH-VOLTAGE TRANSISTOR S ilico n n-p-n transistor in TO 126 plastic package in tended fo r use as a d river fo r line o u tp u t transistors in c o lo u r tv receivers. Q U IC K R E F E R E N C E D A T A Collector-base voltage open e m itte r

BUZ331

Abstract: TRANSISTOR D 471 IEC134
Contextual Info: N AMER PHILIPS/DISCRETE ObE D . PowerMOS transistor • ^53^31 0014700 1 ■ BUZ331 r - 3 ^ -« 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect pôwer transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: m H EW LETT* PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high perform ance NPN bipolar transis­

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA

HC 148 TRANSISTOR

Abstract: AN569 MTY14N100E
Contextual Info: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY14N 100E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high

Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's D ata S heet M TY14N100E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high

d732

Abstract: B696 2SD732 D732K 2SB696K D-732 B696K 2SB696 2SD732K D696K
Contextual Info: Epitaxial Mesa Type Silicon Transistor For AF Power Amplifier- Use ★ [N E W ]/Te n ta tive Specification ★For output stage of 60 watts power amplifier ★ Enough ability of voltage, current and antidestruc­ tion. 467A . — D U ? ÿ 9 • I î i ÿ l;J±

12v DC motor

Abstract: remote speed control of ac motor 100K preset potentiometer DIODE in4005 IN4005 diode remote speed control of dc motor relay 12v dc 100rpm DC motor potentiometer 4k7 1K preset potentiometer
Contextual Info: RS 320-584 PB0224 Issue 4 OEM Speed control board 102 and 313 speed control board Installation and operating instructions 1 Contents Declarations 1.0 Description 2.0 Specification 3.0 Identification 4.0 313FD/D 12V DC motor - externally mounted transistor

CEB6031L

Contextual Info: CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 30V, 60A, R d s o n =1 O m Q @ Vgs=1 0V. R d s (on )=1 5m Q @ Vgs=4.5V. • Super high dense cell design for extremely low R • High power and current handling capability.

75n06

Abstract: GC230 GC35 TT218 STH75N06FI
Contextual Info: STH75N06 STH75N06FI SGS-THOMSON ]D ^©|[LlCTi©^ iJ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH75N06 STH75N06FI . . . . . . . . V dss R D S o n 60 V 60 V 0.014 i l 0.014 Sì 75 A 48 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANC HE TESTED

AN569

Abstract: MTY14N100E 340G
Contextual Info: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS

arco mica trimmer 30

Abstract: VRF2933 SD2933
Contextual Info: VRF2933 VRF2933MP 50V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation