CEB6031L Search Results

Contextual Info: CEP6031LS2/CEB6031LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voltage Drain Current Idss V ds =24V, V gs =0V 10 pA Gate-Body Leakage

CEB6031L

Contextual Info: CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 30V, 60A, R d s o n =1 O m Q @ Vgs=1 0V. R d s (on )=1 5m Q @ Vgs=4.5V. • Super high dense cell design for extremely low R • High power and current handling capability.

CEB6031L

Abstract: CEP6031l
Contextual Info: CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS ON =10m Ω @VGS=10V. D RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.

CEB6031L

Contextual Info: CEP6031L/CEB6031L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 60A,RDS ON = 10mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223