TRANSISTOR D 1762 Search Results

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

SLUA099

Contextual Info: bq24004 bq24005 bq24006 www.ti.com SLUS476B – DECEMBER 2000 – REVISED MAY 2002 TWO-CELL Li-ION CHARGE MANAGEMENT IC FOR PDAs AND INTERNET APPLIANCES FEATURES D Highly Integrated Solution With FET Pass Transistor and Reverse-Blocking Schottky and Thermal Protection

CEM8410

Abstract: CEM8410A
Contextual Info: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 10 A , R d s o n =1 2m Q RDS(ON)=20m Q @ Vgs=1 0V. @Vgs=4.5V. • Super high dense cell design for extremely low Rds(on). • High power and current handing capability. • Surface Mount Package.

A12U

Contextual Info: Tem ic TCRT5000 S e m i c o n d u c t o r s Reflective Optosensor with Transistor Output Description T he TC R T 5000 has a com pact construction w here the em itting-light source and the detector are arranged in the sam e direction to sense the presence o f an object by using

CEM4410A

Contextual Info: CEM441OA M a rc h 1 9 9 8 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 10 A , R d s o n =1 1mfi R ds (o n )=20 itiQ @Vgs=1 0V. @Vgs=4.5V. • Super high dense cell design for extremely low R ds (on ). • High power and current handing capability.

ocr4

Abstract: 2SD1762 transistor 2a h
Contextual Info: / T ransistors b~7 O C R 4 4 Q C 2SB11Í i 7 Ji/7' u - P N P h 7 > 15;Ji JSW^íÍlÍÍffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ii-Jfi\t"ji0 / /Dimensions Unit : mm) 1) VcE(sat) 0.5V (Typ.)t<£l'„ at lc / lB= 2 A / - 0 . 2 A 2) 2 S D 1 7 6 2 t z l > y j T i i 5 o

transistor manual substitution FREE

Abstract: 1762-OB8 1762-IF2OF2 1762-OB8 wiring manual transistor D 1762 1762-IQ8 1762 IF2OF2 1762 OB8 Micrologix 1200 1762-OA8
Contextual Info: Installation Instructions MicroLogix 1762-OB8 Solid-State 24V dc Source Output Module Inside Description .3 Mounting .5

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

1762-oW16

Contextual Info: Installation Instructions MicroLogix 1762-OW16 Relay Output Module Catalog Number 1762-OW16 Table of Contents Topic Page Important User Information 2 North American Hazardous Location Approval 4 Additional Resources 5 Overview 6 Module Description 7 Mount the Module

tda8362b

Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

ta7781

Abstract: F16GA2-P TA7781P XCS TE 3D16A TA7781F sumida ift coil
Contextual Info: MAILILIUMMilUVJUiiJJÜMUÜliLnM TOSHIBA-, ELECTRONIC GS PE^| TDcì7a47 DD17tlb b 1.5V FM/AM IF SYSTEM f Unit in mm Including Earphone Driver TA7781P 16 The TA7781P/F are EM/AM IF system XCs designed for low voltage operation(l.5V), which are especially suitable

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

TRANSISTOR d1760

Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

Contextual Info: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has

Contextual Info: MOSEL MSS2001 Speech Synthesizer Voice ROM FEATURES DESCRIPTION • Can synthesize human voices and most animal sounds. Th e M S S 2001 is a C M O S single-chip speech synthesizing R O M that can synthesize up to 20 seconds of voice using the P C M Quantified Coding method.

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

6 pin TRANSISTOR SMD CODE 21

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

transistor smd marking mx

Abstract: smd marking ARB TRANSISTOR SMD MARKING CODE ARB Siemens+TDA+2026
Contextual Info: SIEMENS PEB 2026 PEF 2026 Table of Contents Page 1 1.1 1.2 1.3 General D e s c rip tio n .3 F e a tu re s . 5

Contextual Info: ICs for Communications ISDN High Voltage Power Controller IHPC PEB 2026 Version 1.1 Data Sheet 09.99 DS 2 PEB 2026 Revision History: Current Version: 09.99 Previous Version: preliminary Data Sheet 02.96 Page in previous Version Page (in current Version)

Supercool LK 03

Abstract: 433/Supercool LK 03 Supercool PR-59 Supercool BOX 27 DA AAC050 tunnel sensor thermoelectric generator F-09225-24-2 LA-160-24-02
Contextual Info: Thermoelectric solutions Our standard range is wide enough to satisfy 8 out of 10 customers Custom design and engineering 4-5 Thermoelectric Systems Applications 6 Air Cooling & Heating 8-9 Accessories Supercool worldwide 7 Direct Cooling & Heating 10-11 Power supplies

Supercool LK 03

Contextual Info: Thermoelectric solutions Our standard range is wide enough to satisfy 8 out of 10 customers Custom design and engineering 4-5 Thermoelectric Systems Applications 6 Air Cooling & Heating 8-9 Accessories Supercool worldwide 7 Direct Cooling & Heating 10-11 Power supplies

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

KTC9012

Abstract: KTC9013
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC9012 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity. • Complementary to KTC9013. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC