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    TRANSISTOR D 1710 Search Results

    TRANSISTOR D 1710 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR D 1710 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931 PDF

    Contextual Info: N AMER PHILIPS/DISCRETE SSE D BFQ33C is recommended for new design bbS3T31 0017633 0 • BFQ33 T '-3 /-| S ' N-P-N MICROWAVE TRANSISTOR The B FQ is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation, featuring an extremely high transition frequency of 12 GHz and very low noise.


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    bfq33cbbs3t31bfq33t-37-15+17z89164 PDF

    BFQ33

    Abstract: SOT-100 BFQ33C IEC134 transistor bbs
    Contextual Info: AMER PHILIPS/DISCRETE 5SE D • 0017333 G ■ B F Q 3 3 C is recommended for new design BFQ33 ^ T - S l - i g N-P-N MICROWAVE TRANSISTOR The B F Q is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation featuring an extremely high transition frequency of 12 G H z and very low noise.


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    bfq33cbfq33sot-100iec134+1transistor bbs PDF

    2N2270

    Abstract: transistor 2n2270 RCA-2N2270 RCA Solid State Power Transistor D-07 2N2270 RCA
    Contextual Info: E SOLID STATE 3875081 öl G E SOLID STATE DE | 3 Ö 7 S D Ö 1 ODITOT? 0 1E 17097 D T - l f ~ High-Speed Power Transistors_ 2N2270 File Number 2 4 Silicon N-P-N Planar Transistor TERMINAL DESIGNATIONS General-Purpose Type for Small-Signal, Medium-Power Applications


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    2n2270rca-2n227092cs-iu7ih292cs-iii79ri+5gd171dqtransistor 2n2270rca solid state power transistord-072n2270 rca PDF

    UC3845BN

    Abstract: MBR370 MTP3N120E-D MUR430 Flyback Switching Power Supply UC3845BN USED CIRCUIT datasheet an1327 AN1327 AN569 MOC8102
    Contextual Info: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS


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    mtp3n120e/dmtp3n120euc3845bnmbr370+8mtp3n120e-dmur430flyback switching power supplyuc3845bn used circuitdatasheet an1327an1327an569moc8102 PDF

    RCA-2N2270

    Abstract: 2N2270 2N2270 RCA rca 2N2270 transistor 2n2270 SILICON TRANSISTOR FS 2 RCA Solid State Power Transistor
    Contextual Info: E SOLID 3875081 STATE G E Öl SO LID STATE » E | 3Ö750Ö1 0D170T7 01E D T - l f - i l 17097 High-Speed Power 2N2270 File Number Silicon N-P-N Planar Transistor 24 TERMINAL DESIGNATIONS


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    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    Contextual Info: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP3 N 120E TMOS E-FET Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS


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    mtp3n120e/d PDF

    Contextual Info: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.


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    dd14ts7lte21009rlte21015rfo-41b PDF

    al 232 nec

    Abstract: NE64400 NE644 NE64408 S21E
    Contextual Info: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors


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    Transistor 2gmz

    Abstract: westinghouse relay c8 2N5921 radar distance 2N5120 allen bradley potentiometer type j ALLEN-BRADLEY POTENTIOMETER WESTINGHOUSE ELECTRIC 2N5920 WESTINGHOUSE driver
    Contextual Info: File No. 440 , RF Pow er T ran sisto rs □G Q B Æ I Solid State Division 2N5920 2-W ,2-G H z, Em itter-Ballasted Silicon N -P -N O verlay Transistor F o r U H F /M ic ro w a v e Pow er A m p lifie r s , M icrow ave F u n d a m e n ta l-F re q u e n c y O s c illa to rs and


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    transistor d 1710

    Abstract: DCT114 DCT114Y TL 188 TRANSISTOR PIN DIAGRAM T4500 MD5900
    Contextual Info: MD59-0022 PCS CDMA Upconverter / Driver 1710— 1710 — 1910 GHz TSSOP-16 Plastic Package1 Features • • • • • • • • .039 (1) High Integrated Upconverter and Driver IC Operates over 2.7 V to 5V Supply Voltage +9 dBm Output Power at 51 dBc ACPR


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    md59-0022tssop-16transistor d 1710dct114+4dct114ytl 188 transistor pin diagramt4500md5900 PDF

    DCT114

    Abstract: Intermediate frequency transformer transistor D 1710 high power fet amplifier schematic DCT114Y 169 MHz RF CHIP MD59-0022 MD59-0022RTR MD59-0022SMB MD59-0022TR
    Contextual Info: MD59-0022 PCS CDMA Upconverter / Driver 1710— 1710 — 1910 MHz TSSOP-16 Plastic Package1 Features • • • • • • • • .039 (1) High Integrated Upconverter and Driver IC Operates over 2.7 V to 5V Supply Voltage +9 dBm Output Power at 51 dBc ACPR


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    md59-0022tssop-16dct114intermediate frequency transformer+7transistor d 1710high power fet amplifier schematicdct114y169 mhz rf chipmd59-0022rtrmd59-0022smbmd59-0022tr PDF

    pin diagram of ic 8088

    Abstract: fujitsu rf power amplifier 49 Fujitsu SAW FUJITSU saw filter
    Contextual Info: Preliminary Information PCS CDMA Upconverter / Driver 1710-1910 MHz MD59-0022 V1.00 Features passivation for increased performance and reliability. • • • • TSSOP16 Highly Integrated Upconverter / Driver IC Operates Over 2.7 V to 5 V Supply Voltage


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    51dbc10dbmtssop16md59-0022+5pin16pin diagram of ic 8088fujitsu rf power amplifier 49fujitsu sawfujitsu saw filter PDF

    T1902

    Contextual Info: WIRELESS - Power Amplifier AWT1902 T X PO W ER MMIC Advanced Product Information Rev 3 DCS1800/P C S 1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902X is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785 and PCS1900 (1850-1910) cellular telephone


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    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    Contextual Info: RF RF2157 Preliminary MICRO DEVICES PCS CDMA/TDM A 3 V POWER A M P L IF IE R Typical Applications • Spread Spectrum Systems • 3V 1710-1780 CDMA PCS Handsets • Commercial and Consumer Systems • 3 V T D M A PCS Handsets • Portable Battery-Powered Equipment


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    TL902

    Contextual Info: AWT 1902 TX POWER MMIC Ehrftoqcs* A d va n ce d P roduct Inform ation Rev 3 Your GaAs IC Source DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902 is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785 and PCS1900 (1850-1910) cellular telephone


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    awt1902pcs1900dcs1800/pcs1900mmun2134+3si9405dcs1800tl902 PDF

    Contextual Info: m • i E 0Ö1MSV7 nbbgo* 0DD07EÖ bfiZ AWT1902X TX POWER MMIC Advanced Product Information Your GaAs IC Source Rev 3 DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902X is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785


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    0dd07eawt1902xdcs1800/pcs1900pcs1900+41000pfmmun2134si9405dcs1800 PDF

    Contextual Info: AWT1902 TX POWER MMIC KmmoG" A d va n ce d P rodu ct Inform ation Rev 3 Your GaAs IC Source DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902 is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785 and PCS1900 (1850-1910) cellular telephone


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    awt1902dcs1800/pcs1900pcs1900mmun2134+2si9405dcs1800 PDF

    Contextual Info: bEM'ìùE'ì □□1710b □□£ MITSUBISHI RF POWER MODULE m _ M57704M 430-450MHZ, 12.5V, 13W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM —I I— PIN : 3 Pin : RF INPUT ©VCOI : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY ®VCC3 : '3rd. DC SUPPLY


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    1710bm57704m430-450mhz PDF

    Si9405

    Abstract: AWT1902 5000Z amplifier circuit diagram DCS1800 MMUN2134 PCS1900
    Contextual Info:  AWT1902 TX POWER MMIC Advanced Product Information Rev 3 DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902 is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785 and PCS1900 (1850-1910) cellular telephone


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    awt1902dcs1800/pcs1900pcs1900mmun2134+5si9405dcs18005000z5132z5000z amplifier circuit diagram PDF

    Contextual Info: HF RF2153 Preliminary MICRO-DEVICES CDMA/TDMA/PACS 1 9 0 0 M H Z 3 V POWER AM PLIFIER Typ ical A p plications • 3 V TDMA PCS Handsets • 3V 1850-1910 CDMA PCS Handsets • Spread Spectrum Systems • 3V 1710-1780 CDMA PCS Handsets • Commercial and Consumer Systems


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    rf2153f21531600m PDF

    Contextual Info: HARRIS H 17106 S E M I C O N D U C T O R 3 1/2 Digit, LCD/LED Display, A/D Converter July 1998 Features Description • Guaranteed Zero Reading for OV Input on All Scales The Harris HI7106 is a high performance, low power, 3 1/2 digit A/D converter. Included are seven segm ent decoders,


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    hi71061-800-4-harris PDF