TRANSISTOR D 140 G Search Results

Contextual Info: 2SD1140 TO SHIBA TO SHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (D ARLING TO N) MICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS. Unit in mm SW ITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hjTE = 4000 (Min.)

S0149

Abstract: M1421
Contextual Info: m m m R F Produci^ M ic m m s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 S D Ì 495 RF & MICROWAVE TRANSISTORS 850-890MHZ CLASS C, BASE STATIONS * < « • . . . CLASS C TRANSISTOR FREQUENCY 870MHz VOLTAGE 24V POWER OUT 35.0W

B452

Abstract: RRJ diode h11q
Contextual Info: 2DI75Z-140 75a '• O u tlin e D ra w in g s POWER TRANSISTOR MODULE : Features • iSHJŒ High Voltage • 7 ')— f r 'l'J 's 'ÿ ÿ 'f J '— KF*3 • A S O A '7 2 ;v .' • Including Freewheeling Diode E xc e lle n t S a fe O p eratin g Area In su late d Type

2SA1802

Abstract: 2SC4681
Contextual Info: T O S H IB A 2SC4681 2SC4681 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE 1 = 200-600 (Vce = 2 V, IC = 0.5 A) : hFE (2) = 140 (Min.) (VCE = 2 V, Ic = 3 A)

transistor K30A

Abstract: K30A transistor D1143 UNELCO SD1143 M135 33ph Arco 423 K30A
Contextual Info: m 140 Commerce Drive ff M ontgom eryville, PA 18936-1013 H / tS -n a n j T L j - t - r t . « i n llr l/C ff y P ro g re s s P o w e re d b y T e c h no log y S D Ì 143 Tel: 215 631-9840 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR

ZCA TRANSISTOR

Abstract: ZCA db TRANSISTOR
Contextual Info: Hf I v I I C t r O T r-» S 6 l f f # , , , , W 140 Com merce Drive Montgomeryviile, PA 18936-1013 1 " Tel: f l 5 631-9840 S D 1 13 2 “5 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS • CLASS C TRANSISTOR . FREQ UENCY ■ VOLTAG E

HIMA

Contextual Info: H / l i f j n L r f f i i i i i •n.m a fln lC r iJ S G iY lM i y l , V V g 5 r l y l 1 f> 140 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 4 2 9 « 3 RF & MICROWAVE TRANSiSTORS 450-512MHz CLASS C, MOBILE APPLICATIONS CLASS C TRANSISTOR

2N3442

Abstract: Transistor bdy 11 BDY74 transistor 2N3 Y7427 Transistor BF 312 BDX20
Contextual Info: * 2 I\I 3442 BDY 74 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , H O M O B A S E 2N 3442 compì, o f BDX 20 Preferred device D is p o s itif recommandé • LF large signal power amplificateur 140 V 2N 3442 2 0 V BDY 74 V -«

TO-253-AA

Abstract: Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240
Contextual Info: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V

BUK445-500B

Contextual Info: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS / D I S CR E T E b 'lE D bb53T31 0Q3D721 TIO « A P X Product Specification Philips Semiconductors BUK481-100A PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface

Contextual Info: N AMER PHI LIP S/ DIS CR ETE j DhE D • PowerMOS transistor bbEBTBl 0014615 5 ■ BUZ155 T- 3V' 13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ356

Contextual Info: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK110-50GS

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.

BUK555-100A

Abstract: BUK555-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 7110flSb DDb4E4b 644 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BUK100-50GL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK102-50DL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK438-800A

Abstract: BUK438-800B BUK4y8-800A
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

a1746

Abstract: LD 25 VW BUK795-60A
Contextual Info: PHILIPS INTERNATIONAL SbE D • 711ÜSHti □ O l44753 7R2 ■ P H I N Philips Components Data sheet status Preliminary specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a 5 pin plastic envelope.

K638

Abstract: idm 73
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: PHILIPS INTERNATIONAL Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK542-1 OOA/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

BUK455-50A

Abstract: BUK455-50B buk455 15 1E41 DPP100-24 T0220AB
Contextual Info: Philips Components BUK455-50A BUK455-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is Intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

fqmb

Abstract: LD 25 V BUK793-60A philips ah 686
Contextual Info: Philips Components Data sheet status P re lim in a ry s p e c ific a tio n date of issue PHILIPS March 1991 BUK793-60A PowerMOS transistor SensorFET INTERNATIONAL SbE ]> Li GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a

BUK556-60H

Abstract: BUK566-60H
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in