TRANSISTOR D 140 G Search Results

ztx1056A

Abstract: BF600 ztx1056 DSA003763
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

bf500

Abstract: ZTX1055A 161627 DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

Contextual Info: OBSOLETE - PLEASE USE ZTX855 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance

BD 139 transistor

Abstract: TRANSISTOR BD 136 BDI36 BD140 BD140-10 BDI38 BD 140 transistor 136 138 140 BD136 transistor bd 138
Contextual Info: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 B D 140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. •

D137 transistor

Abstract: D135 BD139B BD139 bd137b BD136
Contextual Info: BD135/137/139 NPN EPITAXIAL SILICO N TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, B D 138 and B D 140 respectively ABSO LUTE MAXIMUM RATINGS Symbol Characteristic Collector B ase Voltage Collector Emitter Voltage

ztx1049a

Abstract: DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 – JUNE 1995

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 95 FEATURES * BCEV=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Emergency Lighting * Low Noise Audio 1.0 180 D=1 D.C 160 t1 140 tp 120 100 0.75

2SD1140

Contextual Info: 2SD1140 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 140 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS Unit in mm SWITCHING APPLICATIONS 5.1 MAX. POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : hpE —4000 (Min.)

2SD1140

Contextual Info: 2SD1140 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 140 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 5.1 MAX. POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain : hpE —4000 (Min.)

MJE 280 power transistor

Abstract: ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1048A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 3 – FEBRUARY 1995

FZT600

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 2 -FEBRUARY 1995- - m FEATURES * 2 A c o n tin u o u s c u rre n t * 140 VO LT VCE0 * G uara n te e d h FE S p e cifie d up to 1A

tf600

Abstract: IC4a ZTX1051A DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am

ZTX1053A

Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am

bd136 N

Abstract: BD139 p BD136 BD139 to128 bd140 Complement power transistor bd136 st BD140 BD140 pnp transistor
Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO-128 • Complement to B D 135, B D 137 and BD139 respectively A BSO LUTE MAXIMUM RATINGS Characteristic Collector Base Voltage BD136 BD138 BD140 Collector Emitter Voltage BD136

Contextual Info: 2SD1140 TO SHIBA TO SHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (D ARLING TO N) MICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS. Unit in mm SW ITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hjTE = 4000 (Min.)

ASI10646

Abstract: TVU012
Contextual Info: TVU012 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 8L FLG DESCRIPTION: C D The ASI TVU012 is Designed for FULL R G FEATURES: O F E .1925 • Input Matching Network • • Omnigold Metalization System .125 K 35 V .115 / 2.92 .065 / 1.65 D 140 W @ TC = 25 C

KTC3226

Contextual Info: SEMICONDUCTOR KTC3226 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APLICATION. B D FEATURES A ᴌHigh DC Current Gain and Excellent hFE Linearity : hFE 1 =140ᴕ600 (VCE=1V, IC=0.5A) P DEPTH:0.2 : hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A).

Contextual Info: SEMICONDUCTOR KTC3226 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APLICATION. B D FEATURES A ᴌHigh DC Current Gain and Excellent hFE Linearity : hFE 1 =140ᴕ600 (VCE=1V, IC=0.5A) P DEPTH:0.2 : hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A).

8D139

Abstract: bd136 M/BTA 8d139 BD136-BD138-BD140 TRANSISTOR SE 140 transistor bd135 BD135/BD135/8D139
Contextual Info: B D 136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Com plem ent to BD135, BD137 and 8D139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD136 : BD138 : BD140 Collector Emitter Voltage: BD136

MPS3405C

Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
Contextual Info: ALLEGRO MICROSYSTEMS INC 85 140 19 SP RA GU E. D T3 • 0504330 G0G3SbS S ■! AL6R S E M I C O N D S / ICS TA 9 3 D 03 5 6 5 ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C DC Current Gain

ASI10656

Abstract: TVV010
Contextual Info: TVV010 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: The ASI TVV010 is Designed for .112x45° A B D FEATURES: S • • • Omnigold Metalization System ØC S G D H I J MAXIMUM RATINGS F IC 10 A VCB 60 V VCE 35 V E PDISS 140 W @ TC = 25 OC

2SD1140

Contextual Info: 2SD1140 TO SHIBA TOSHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 5.1 M AX. PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE —4000 (Min.)

Contextual Info: 2STW4468 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Complementary to 2STW1695 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o r P e Applications

Contextual Info: 2STW1695 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -140 V ■ Complementary to 2STW4468 ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o Applications ■ r P e Audio power amplifier