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    TRANSISTOR C8 Search Results

    TRANSISTOR C8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR C8 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    kia7900pitc7sh04fukic7sh04fusc604+16kac3301qnm51943kia7042ap/aftc7sh08fukic7sh08fult1937oz960khb*9d5n20pmb4213kia78*pimn1280f10p048kia7812amje13007mb4213 equivalenttransistor smd n2 3j PDF

    TP3400

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3400 The RF Line UHF Linear Power Transistor 'C = 400 mA UHF LINEAR TRANSISTOR NPN SILICON The TP3400 is a NPN transistor gold metallized for reliability. The transition frequency of 3 GHz make this transistor a high gain — high output


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    tp3400 PDF

    germanium transistors PNP

    Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
    Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,


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    ibm43rf0100ibm43rf0100ev823vdcgermanium transistors pnp+8sige rf transistorpnp germanium transistorsige pnptransistor making listsige pnp transistorfmmt2907atabipolar transistor ghz s-parameterj1 transistor PDF

    BLV91

    Abstract: ferroxcube 1988 mda406 MDA401
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in


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    blv91/slot-172dblv91ferroxcube 1988+2mda406mda401 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492 PDF

    BY206

    Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in


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    blw32by206bzy88bzy88-c3v3+3bzy88c-3v32222 809 05003mgp430 PDF

    capacitor 2200 uF

    Abstract: philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a


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    blt82ot96-1mam227capacitor 2200 uf+8philips resistor 2322 156uhf transistor2322 156 philipssmd ic catalogue200bbc817transistor smd l3smd transistor l6 PDF

    BY206

    Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in


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    blw34by206c102fbzy88-c3v3+3bzy88c-3v3100a-2ro-c-px-50uhf amplifier design transistor PDF

    BTN2129T3

    Abstract: 06102 d 772 transistor
    Contextual Info: CYStech Electronics Corp. Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129T3 Description The BTN2129T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


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    c853t3btn2129t3o-126r2120+3ul94v-006102d 772 transistor PDF

    IC 4047

    Abstract: data sheet of IC 4047 IC 4047 BE ic 4047 datasheet BTN2129E3
    Contextual Info: CYStech Electronics Corp. Spec. No. : C853E3 Issued Date : 2004.06.15 Revised Date : 2004.07.14 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129E3 Description The BTN2129E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


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    c853e3btn2129e3o-220abr2120+5ul94v-0ic 4047data sheet of ic 4047ic 4047 beic 4047 datasheet PDF

    MDA337

    Abstract: 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 Philips Semiconductors Product specification UHF power transistor BLU60/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope


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    blu60/12ot-119mda3372395 transistor+4gp605class b power transistors datasheet current gainsot-119b1w3 PDF

    BFG97

    Abstract: BFG31 TRANSISTOR BFg97 sc7313
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223


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    bfg97ot223bfg31msb002+3r77/02/pp16transistor bfg97sc7313 PDF

    bfg97

    Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223


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    bfg97ot223bfg31msb002+1r77/02/pp16 PDF

    transistor rf m 1104

    Abstract: UHF TRANSISTOR TRIMMER capacitor 5-60 pF BLU97
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU97 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU97 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor designed for use in mobile


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    blu97ot122atransistor rf m 1104uhf transistor+1trimmer capacitor 5-60 pf PDF

    BLX94C

    Abstract: MBH100 BLX94
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended


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    blx94cot122ambh100blx94 PDF

    thickness of microstripline

    Abstract: BFG31 BFG97 MBB773
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor


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    bfg97ot223bfg31msb002+2thickness of microstriplinembb773 PDF

    1902 transistor

    Abstract: BTN2129A3
    Contextual Info: CYStech Electronics Corp. Spec. No. : C853A3 Issued Date : 2004.07.14 Revised Date :2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129A3 Description The BTN2129A3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


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    c853a3btn2129a3r2120ul94v-0+11902 transistor PDF

    122d transistor

    Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


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    blu11/slot-122d122d transistorsl 100 npn transistor+3mda309122dsl 100 npn transistor base emitter collector PDF

    MDA342

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU45/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope


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    blu45/12ot-119mda342 PDF

    318M

    Contextual Info: SEC TENTATIVE SPECIFICATION SILICON POWER TRANSISTOR ELECTRON DEVICE 2SD1162 V443 HIGH VOLTAGE HIGH CURRENT SW ITCHING NPN SILICON TRIPLE DIFFUSED DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable fo r transistor ignitor and m otor driver applications.


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    2sd1162318m PDF

    Philips 4312 020

    Abstract: blv75
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


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    blv75/12ot-119philips 4312 020blv75 PDF

    mda324

    Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in


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    blu30/12ot-119mda324mda325+3transistor d 23954313-020-15170mda327 PDF

    BLW98

    Abstract: blw98 transistor BY206 application note blw98 BY206 Equivalent uhf linear amplifier BD136 linear handbook 3 pin trimmer capacitors transistor blw98
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor BLW98 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in


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    blw98blw98 transistorby206application note blw98+6by206 equivalentuhf linear amplifierbd136linear handbook3 pin trimmer capacitorstransistor blw98 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended


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    bfg198ot223msb002r77/03/pp14 PDF