TRANSISTOR C4 Search Results

germanium transistors PNP

Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,

BLV91

Abstract: ferroxcube 1988 mda406 MDA401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in

transistor D 2578

Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting

MDA337

Abstract: 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 Philips Semiconductors Product specification UHF power transistor BLU60/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope

BLX94C

Abstract: MBH100 BLX94
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended

MDA342

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU45/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope

bfg135 application note

Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,

Philips 4312 020

Abstract: blv75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

mda324

Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in

TRANSISTOR GENERAL DIGITAL L6

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4

transistor D 2395

Abstract: BLV45/12
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

d 331 transistor 1080

Abstract: bly87c MSB056
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

SOT123 Package

Abstract: BLV21 SOT123 L2-7 TURN transistor Common Base configuration transistor Common collector configuration TRANSISTOR W2 "beryllium oxide" 4312 020 36640 ceramic capacitor philips 561
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV21 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

BFG198

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a

ceramic trimmer capacitor

Abstract: transistor Common Base configuration philips Trimmer 60 pf BLY88C MSB056 15 w RF POWER TRANSISTOR NPN BLy88 list of transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLY88C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

BLY89C

Abstract: MSB056
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLY89C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLY89C DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

BD443

Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

BLW83

Abstract: philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and

BD443

Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

4312 020 36640

Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

TRANSISTOR b100

Contextual Info: UTCMMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR

Philips polystyrene capacitors

Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB

Philips polystyrene capacitor

Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor
Contextual Info: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear