marking 2L PNP SOT-89
Abstract: BTC3906M3 BTA1514M3
Contextual Info: Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : Page No. : 1/5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1514M3 Description • The BTA1514M3 is designed for general purpose application requiring high breakdown voltage.
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c307m3bta1514m3-150vbtc3906m3+3ot-89ul94v-0marking 2l pnp sot-89
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BTC3906N3
Abstract: BTA1514N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C307N3 Issued Date : 2002.06.11 Revised Date : 2002.12.04 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1514N3 Description • The BTA1514N3 is designed for general purpose applications requiring high breakdown
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c307n3bta1514n3btc3906n3ot-23+1ul94v-0
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BTA1514N3
Abstract: BTC3906N3
Contextual Info: Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2006.08.04 Page No. : 1/5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1514N3 Description • The BTA1514N3 is designed for general purpose application requiring high breakdown voltage.
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TRANSISTOR n5401 b
Abstract: n5401 n5401 transistor C307A3 BTN5551A3 BTP5401A3 TRANSISTOR n5401 3n5401
Contextual Info: Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3 Description • The BTP5401A3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A
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c307a3btp5401a3-150vbtn5551a3+6ul94v-0transistor n5401 bn5401n5401 transistortransistor n54013n5401
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BTN5551N3
Abstract: BTP5401N3
Contextual Info: Spec. No. : C307N3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401N3 Description • The BTP5401N3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A
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BTA1579S3
Abstract: BTC4102S3
Contextual Info: Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description • The BTP1579S3 is designed for high voltage amplification application. • High BVCEO, BVCEO= -120V
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Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)
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Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)
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c3075
Abstract: 2SC3075 toshiba c3075
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)
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toshiba c3075
Abstract: C3075
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)
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C3076
Abstract: 2SA1241 2SC3076
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)
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transistor c3076
Abstract: C3076 2SA1241 2SC3076 024 marking code
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)
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2sc30762sa1241transistor c3076c3076+1024 marking code
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c3076
Abstract: 2SA1241 2SC3076 transistor c3076
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · Excellent switching time: tstg = 1.0 µs (typ.)
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transistor c3076
Abstract: C3076 2SA1241 2SC3076
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)
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transistor c3076
Abstract: C3076 2SC3076 2SA1241
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)
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Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)
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2SC3076
Abstract: C3076 2SA1241
Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)
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Contextual Info: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)
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c3074
Abstract: Transistor c3074 2SC3074 C3074 y Equivalent 2SC3074 2SA1244
Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244
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2sc30742sa1244c3074transistor c3074+2c3074 yequivalent 2sc3074
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c3074
Abstract: Equivalent 2SC3074 2SA1244 2SC3074
Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244
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C3075
Abstract: 2SC3075
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 s (max) • High collector breakdown voltage: VCEO = 400 V
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122
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C3075
Abstract: 2SC3075 C307
Contextual Info: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max) · High collector breakdown voltage: VCEO = 400 V
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Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244
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