TRANSISTOR C123 Search Results

transistor tt 2222

Abstract: TT 2222 npn SOT171 multilayer ceramic capacitor heatsink catalogue BLV934 philips 0201 capacitor transistor 257 isolated npn metal
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

C1232

Abstract: cox 15um
Contextual Info: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold

C1232

Abstract: transistor C123
Contextual Info: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold

C1232

Abstract: cox 15um cmos transistor 0.35 um
Contextual Info: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold

640 TRANSISTOR NPN

Abstract: C1231 c123* transistor
Contextual Info: ISO 9001 Registered Process C1231 HV BiCMOS 1.2µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSP ON Resistance HVPR0N

C1231

Contextual Info: ISO 9001 Registered Process C1231 HV BiCMOS 1.2µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSP ON Resistance HVPR0N

C1231

Abstract: cox 15um
Contextual Info: ISO 9001 Registered Process C1231 HV BiCMOS 1.2µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSP ON Resistance HVPR0N

transistor k 2761

Abstract: k 2761 transistor poly silicon resistor C1230 hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um
Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

transistor k 2761

Abstract: C1230 C1206
Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

BUX21

Abstract: SGS-Thomson BUX21
Contextual Info: • I 7 ^ 2 3 7 o p a a ^ B ? a ■ H ~ " - 3 3 - i s _ r = 7 SCS-THOMSON * 7# B U X 21 S G S- TH OMSON 3ÜE D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX21 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, inten­

C1230

Abstract: transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206
Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

transistor c1237

Abstract: TSD250N05V
Contextual Info: 3DE » • 7 cì 2 c1237 Q03QLi02 1 , - SGS-THOMSON z u s g TSD250N05F TSD250N05V IQJOITGMOtgS n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOMSON TENTATIVE DATA TYPE TSD250N05F/V V dss RDS on Id 50 V 0.004 n 250

DTC123ESA

Abstract: C123ES DTC123EE DTC123EKA DTC123EM DTC123EUA SC-72 T106 T146
Contextual Info: DTC123EM / DTC123EE / DTC123EUA / DTC123EKA / DTC123ESA Transistor 100mA / 50V Digital transistors with built-in resistors DTC123EM / DTC123EE / DTC123EUA / DTC123EKA / DTC123ESA zExternal dimensions (Unit : mm) zApplications Inverter, Interface, Driver

transistor c124

Abstract: C124 E S W transistor IRGPC40FD2 C-123 C-118
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

transistor c124

Abstract: transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118
Contextual Info: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

transistor c124

Abstract: C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor
Contextual Info: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

C123JS

Abstract: C123 DTC123JKA transistor e42 DTC123JE DTC123JM DTC123JSA DTC123JUA SC-72 T106
Contextual Info: DTC123JM / DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor 100mA / 50V Digital transistors with built-in resistors DTC123JM / DTC123JE / DTC123JUA DTC123JKA / DTC123JSA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

SGSP579

Contextual Info: 3QE D • T ^ E a? 0030071 4 ■ -\3 ^ s r- SGS-THOMSON HLiÊTTMôÊi s 6 S TH0MS0N SGSP579 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP579 VDSS 500 V f*DS on 0.7 Q •d 9A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE -9A FOR UP TO 350WSMPS

STHV82

Abstract: STHV82FI
Contextual Info: T'îS'îaS? £ t7 0 0 4 5 ^ 0 357 • S G T H SGS-THOMSON L i « ! STHV82 STHV82FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STHV82 STHV82FI ■ . . . . . ■ V dss R DS on Id 800 V 800 V <2Q < 2 Ü 5.5 A 3.6 A TYPICAL RDS(on) = 1.65 £2

23N05

Abstract: stk 0055 23n06 23N05L
Contextual Info: 7 ^ 2 ^ 2 3 7 O O M b lB f l S 12 • S G T H STK23N05L STK23N06L SGS-THOMSON *5 7 RÆQ i©[EL[MM©[KS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STK23N 05L STK23N06L . . . . . . ■ . . V dss RDS on Id 50 V 60 V

Contextual Info: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING