DTC123EE Search Results

2SA2018

Abstract: DTC123EE
Contextual Info: EMF4 Transistors Power management dual transistors EMF4 2SA2018 and DTC123EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor (2) DTr2 (2) 0.5 0.5 1.0 1.6 (5) (1) 0.5 1.2 1.6 Each lead has same dimensions Abbreviated symbol：F4

Contextual Info: 100mA / 50V Digital transistors with built-in resistors DTC123EM / DTC123EE / DTC123EUA / DTC123EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the

2SA1774

Abstract: DTC123EE EMF17 UMF17N
Contextual Info: EMF17 / UMF17N Transistors Power management dual transistors EMF17 / UMF17N 2SA1774 and DTC123EE are housed independently in a EMT or UMT package. !External dimensions (Units : mm) !Application Power management circuit !Features 1) Power switching circuit in a single package.

DTC123E

Abstract: DTC123EE DTC123EKA DTC123EM DTC123ESA DTC123EUA SC-72 T106 DTC123ES
Contextual Info: DTC123EM / DTC123EE / DTC123EUA DTC123EKA / DTC123ESA Transistors Digital transistors built-in resistors DTC123EM / DTC123EE / DTC123EUA DTC123EKA / DTC123ESA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

DTC123EKA

Abstract: DTC123EE DTC123ESA DTC123EUA
Contextual Info: Transistors Digital transistors built-in resistors DTC123EE / DTC123EUA / DTC123EKA DTC123ESA FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the

DTC123EE

Abstract: DTC123EKA DTC123EM DTC123EUA T106 T146
Contextual Info: 100mA / 50V Digital transistors with built-in resistors DTC123EM / DTC123EE / DTC123EUA / DTC123EKA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the

Contextual Info: h "7 > y X $ / T ransistors DTC123EE/DTC123EU A/DTC123EKA DTC123EE/DTC123EUA/DTC123EKA S iS r t Ä h 7 >->';<$ Digital Transistors (Includes Resistors) h 7,^ T .'f y ^-/Transistor Switch • \f";£ H i/ D im e n s io n s (U n it : mm) » , A * f f lU W ÿ f # W iS f i; * Ü T " r >

"Marking f7"

Abstract: f7 transistor 2SC5585 DTC123EE T108
Contextual Info: UMF7N / IMF7 Transistors Power management dual transistors UMF7N / IMF7 2SC5585 and DTC123EE are housed independently in a UMT or SMT package. !External dimensions (Units : mm) !Application Power management circuit 0.65 2.0 0.65 1.3 (3) (2) (1) (6) !Features

2SA2018

Abstract: DTC123EE
Contextual Info: EMF4 Transistors Power management dual transistors EMF4 2SA2018 and DTC123EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor (2) DTr2 (2) 0.5 0.5 1.0 1.6 (5) (1) 0.5 1.2 1.6 Each lead has same dimensions Abbreviated symbol：F4

Contextual Info: DTC123EM / DTC123EE / DTC123EUA DTC123EKA / DTC123ESA Transistors Digital transistors built-in resistors DTC123EM / DTC123EE / DTC123EUA DTC123EKA / DTC123ESA zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

Contextual Info: UMF7N Transistors Power management dual transistors UMF7N 2SC5585 and DTC123EE are housed independently in a UMT package. 0.65 1.25 2.0 1.3 (3) (2) (1) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

Contextual Info: DTC123EM / DTC123EH / DTC123EE / DTC123EUA DTC123EKA / DTC123ESA Transistors Digital transistors built-in resistors DTC123EM / DTC123EH / DTC123EE / DTC123EUA / DTC123EKA / DTC123ESA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

"Marking f7"

Abstract: 2SC5585 DTC123EE
Contextual Info: EMF7 Transistors Power management dual transistors EMF7 2SC5585 and DTC123EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor ROHM : EMT6 (2) DTr2 (2) 0.5 0.5 1.0 1.6 (5) (1) 0.5 1.2 1.6 Each lead has same dimensions

DTC123ESA

Abstract: C123ES DTC123EE DTC123EKA DTC123EM DTC123EUA SC-72 T106 T146
Contextual Info: DTC123EM / DTC123EE / DTC123EUA / DTC123EKA / DTC123ESA Transistor 100mA / 50V Digital transistors with built-in resistors DTC123EM / DTC123EE / DTC123EUA / DTC123EKA / DTC123ESA zExternal dimensions (Unit : mm) zApplications Inverter, Interface, Driver

2SC4617

Abstract: DTC123EE EMF19 UMF19N
Contextual Info: EMF19 / UMF19N Transistors Power management dual transistors EMF19 / UMF19N 2SC4617 and DTC123EE are housed independently in a EMT or UMT package. !External dimensions (Units : mm) !Application Power management circuit 0.22 (5) (2) 1.2 1.6 (1) 0.5 0.13 (6)

Contextual Info: EMF17 / UMF17N Transistors Power management dual transistors EMF17 / UMF17N 2SA1774 and DTC123EE are housed independently in a EMT or UMT package. !External dimensions (Units : mm) !Application Power management circuit !Features 1) Power switching circuit in a single package.

Contextual Info: EMF19 / UMF19N Transistors Power management dual transistors EMF19 / UMF19N 2SC4617 and DTC123EE are housed independently in a EMT or UMT package. !External dimensions (Units : mm) !Application Power management circuit 0.22 (5) (2) 1.2 1.6 (1) 0.5 0.13 (6)

DTC123EE

Contextual Info: SPICE PARAMETER DTC123EE by ROHM TR Div. * DTC123EE DIGITAL NPN BJT model * Date: 2007/01/11 * BJT with resistors *C B E .SUBCKT DTC123EE 1 2 3 R1 2 Base Rb 2.2k R2 Base 3 Re 2.2k Q1 1 Base 3 QDTC1 .MODEL Rb RES + R=1 .MODEL Re RES + R=1 .MODEL QDTC1 NPN

Contextual Info: Transistors Digital transistors built-in resistors DTC123EE/ DTC123EUA/ DTC123EKA DTC123ESA • F e a tu re s • E x t e r n a l d im e n s io n s (U nits: m m ) 1 ) B u ilt- in b ia s re s is to r s e n a b le th e c o n fig u ra tio n o f a n in v e rte r c irc u it

Contextual Info: DTC123E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 100mA 2.2kW 2.2kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN IN GND GND DTC123EM (SC-105AA) UMT3 DTC123EE SOT-416 (SC-75A) SMT3 OUT lFeatures

2SA20

Abstract: 2SA2018 DTC123EE
Contextual Info: UMF4N Transistors Power management dual transistors UMF4N 2SA2018 and DTC123EE are housed independently in a UMT package. 0.65 1.25 2.0 0.65 1.3 (3) (1) (2) (4) (5) (6) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

2SC5585

Abstract: DTC123EE
Contextual Info: UMF7N Transistors Power management dual transistors UMF7N 2SC5585 and DTC123EE are housed independently in a UMT package. 0.65 1.25 2.0 1.3 (3) (2) (1) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

Contextual Info: DTC123E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 50V DTC123EM DTC123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ

2SA1774

Abstract: DTC123EE EMF17 UMF17N
Contextual Info: EMF17 / UMF17N Transistors Power management dual transistors EMF17 / UMF17N 2SA1774 and DTC123EE are housed independently in a EMT or UMT package. zExternal dimensions (Unit : mm) zApplication Power management circuit zFeatures 1) Power switching circuit in a single package.