TRANSISTOR C109 Search Results

d1117

Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
Contextual Info: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V

d1297

Abstract: d1308 2SK2357 2SK2358 C10535E C11531E
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor in millimeters designed for high voltage switching applications.

d1308

Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.

d1308

Abstract: D1297 2SK2355 2SK2356 2SK2356-Z MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel in millimeter MOS Field Effect Transistor designed for high voltage switching

d1308

Abstract: d1297 2SK2414 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)

C10535E

Abstract: C10943X MEI-1202 PA1701 TEA-1035 UPA1701 1037 u
Contextual Info: DATA SHEET MOS Field Effect Power Transistors µPA1701 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transistor in millimeter designed for power management applications of note

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power

a1037

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power

2SK2724

Abstract: C10535E C10943X MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. 10.0 ±0.3

C10535E

Abstract: C10943X MEI-1202 PA1710 G1088
Contextual Info: DATA SHEET MOS Field Effect Power Transistors µPA1710 SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for DC/DC converter and power management 8

TL113

Abstract: tl201 TL217 w3 smd transistor transistor c111
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

c102 TRANSISTOR

Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

SWITCHING TRANSISTOR C114

Abstract: C114 E S W transistor C114 transistor for C114 transistor IRGPC30FD2 C-111 C-113 C-114 C-115 ic c113 61
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

PA1572

Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
Contextual Info: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and

TL139

Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

SWITCHING TRANSISTOR C114

Abstract: C114 E S W transistor C114 transistor C114 dt for C114 transistor transistor c114 e
Contextual Info: P D - 9.1040 International iorJRectifier IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz

IC-3486

Abstract: UPC7915 UPC7905A UPC7905AHF UPC7915AHF UPC7912AHF nec d 882 p datasheet MP-45G PC7912AHF PC7915AHF
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC7900A Series THREE TERMINAL NEGATIVE VOLTAGE REGULATOR DESCRIPTION µPC7900A series are monolithic three terminal negative regulators which employ internally current limiting, thermal shut down, output transistor safe operating area protection make them essentially indestructible.

VdS 2093 2009

Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz

F-254B

Abstract: 0030G
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿IPC79M00 Series THREE TERMINAL NEGATIVE VOLTAGE REGULATOR /¿PC79M00 series are monolithic three terminal negative regulators which employ internally current limiting, ther­ mal shut down, output transistor safe operating area protection make them essentially indestructible.

TL272

Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty

mPC29M33

Abstract: 29m05 29m33 PC29M00 MP-45G upc29m05hf
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT _//PC29M00 Series THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR The ¿¡PC29M00 series of low dropout voltage three transistor. The ¿¡PC29M00 series feature the ability to term inal positive regulators is constructed with PNP output

Contextual Info: 19-4625; Rev 0; 5/09 MAX17102 Evaluation Kit The MAX17102 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides the voltages and features required for activematrix, thin-film transistor (TFT), liquid-crystal displays