TRANSISTOR C 1279 Search Results

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Transistor C 1279

Abstract: 2SC1279 2SC127 C1279 MA177
Contextual Info: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION 2S C 127 9 D The 2SC 1279 is designed fo r use high voltage switching ap­ plication. FEATURES • High Breakdown Voltage 2 B V cbo : 180 V ABSOLUTE M AXIM U M RATINGS Maximum Temperatures Storage Tem perature. -5 5 to +125 °C

transistor c 2335

Abstract: C-150 IRFI840G IRGIB15B60KD1
Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGIB15B60KD1P

Abstract: C-150
Contextual Info: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor BR 9013

Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor BR 9013

Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRGIB15B60KD1P
Contextual Info: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

2SC1271

Abstract: EP253 transistors 1UW
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

0116 Solar Lamp Controller

Abstract: transistor 2A ZXSC300
Contextual Info: ZXSC100 SINGLE CELL DC-DC CONVERTER SOLUTION DESCRIPTION efficiency over a wider range of load currents, several circuit configurations are possible with power dissipation up to 2W. The step up output voltage is easily programmed with external resistors, the

0116 Solar Lamp Controller

Abstract: d01608c-223 solar converter dc to dc diagram 0116 solar 0116 Solar Lamp 0116 solar 4 pins solar charge controller 24 TRANSISTOR MAKING transistor pnp 30V 2A 1W D03316P-223
Contextual Info: ZXSC100 SINGLE CELL DC-DC CONVERTER SOLUTION DESCRIPTION efficiency over a wider range of load currents, several circuit configurations are possible with power dissipation up to 2W. The step up output voltage is easily programmed with external resistors, the

0116 Solar Lamp Controller

Abstract: 0116 Solar Lamp 0116 solar 4 pins 0116 solar D01608C-223 D03316P-223 NY TRANSISTOR MAKING LIST transistor 6835 ZXT14N20DX 2N2907
Contextual Info: ZXSC100 SINGLE CELL DC-DC CONVERTER SOLUTION DESCRIPTION efficiency over a wider range of load currents, several circuit configurations are possible with power dissipation up to 2W. The step up output voltage is easily programmed with external resistors, the

stk6105

Abstract: sanyo motor 3 phase
Contextual Info: Ordering number : EN4345A Thick Film Hybrid 1C No. 4345A STK6105 DC 3-phase Brushless Motor Driver Output Current 5A Overview Package Dimensions The STK6105 is a hybrid IC incorporating a 3-phase brushless motor controller and driver into a single package, on the Sanyo IMST (Insulated Metal Substrate

PCF7931AS

Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Contextual Info: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

transistor BF 697

Abstract: transistor equivalent 0107 NA PJ 1269 bc1323 pj 0266 BFR540 BFS540 025-1 transistor c 4236 2999 npn
Contextual Info: Philips Sem iconductors • 7 1 1 D f l2 t j 00bT3D5 VbT ■ P H IN Product specification NPN 9 GHz wideband transistor BFS540 PINNING FEA T U R ES PIN CONFIGURATION PIN • High power gain D ESCRIPTIO N Code: N4 • Low noise figure • High transition frequency

Transistor C 1279

Abstract: 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter
Contextual Info: LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators

PHC20306

Contextual Info: Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor D u ro n «« PHC20306 PINNING -SOT96-1 S08 FEATURES • Very low on-state resistance • High-speed switching PIN SYMBOL 1 S1 DESCRIPTION t i l ’l l source 1

equivalent transistor TT 3043

Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
Contextual Info: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1

Contextual Info: High Voltage RF LDMOS Technology for Broadcast Applications S.J.C.H. Theeuwen, W.J.A.M. Sneijers, J.G.E. Klappe, J.A.M. de Boet NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, walter.sneyers@nxp.com, jos.klappe@nxp.com, jan.de.boet@nxp.com

transistor k 4110

Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Contextual Info: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

4435a

Abstract: 4435 4435 transistor F 4435a 4435 m sanyo CG LC587004 LC587006 LC587008 QFP80
Contextual Info: Ordering number : EN*4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8, 12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC587008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD

44358

Abstract: 4435a serial counter 24129 lek 923 LC587004 LC587006 LC587008 QIP80A 587006
Contextual Info: Ordering number : ENÌK4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8,12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC5B7008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD