TRANSISTOR C 1177 Search Results

2SK462

Abstract: 53-AS M71E
Contextual Info: NEC j N ^ 1 -^ ^ ' ^ ' 7 y — M O S ? - > F E T ? m oLm m N-Channel MOS Field Effect Power Transistor Switching Industrial Use Afflili]/PA C K A G E DIMENSIONS 2S K462Ü , Unit : mm FETT-, * 7 f > D C - D C 3 V '* — ? , w m v m t i r n à * ¿6 , ¡ÎJS ÎÆ

2SK659

Abstract: TC-6071
Contextual Info: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #

2SA1462

Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
Contextual Info: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,

t1c8

Abstract: 2sk459 2SK45 JE 33 T460
Contextual Info: NEC m MOS Field E ffe c t P o w e r T r a n s is t o r + T f x r x 2SK459 FET I t f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK459ii, FET ^ • ^ E I/ P A C K A G E DIMENSIONS Unit '•mm T, S JS S D C -D C ^ v a -^, K y - f ^*4: ¿ f w a i i j f f l t L T f

stk 2155

Abstract: stk 490 110 2SC3733 transistor NPN 2sc3733 2SA1460 N50M 2sa1460-t
Contextual Info: NEC i '> V = 3 > Silicon Tran sisto r 2S C 3 7 3 3 N P N J it x i f f l N PN Silicon Epitaxial Transistor High Speed S w itch in g , High Frequency A m plifier Industrial Use ^ H I/P A C K A G E D IM E N S IO N S 4 # * / FEATURES o ^ : i5 r L < 7 |iiii X 'f

2N1050A

Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
Contextual Info: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A

3e tRANSISTOR

Abstract: TT3010 TRANSISTOR XL08 4-0992 XL08 2SK446 SK-446 JE 33 T108 JE 720 transistor
Contextual Info: NEC j m + T / v r x — Y = 7 > i > * 9 M O S Field E ffe c t P o w e r T r a n s is t o r A _ 2SK446 N f t ^ ^ < 7 y - ^ M O S F E T > jim m N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 4 6 ii, nmm/ p a c k a g e FETT,

ic ntp- 3000

Abstract: IIH13 Scans-0088096
Contextual Info: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o

2SK1132

Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
Contextual Info: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4

2SA1177

Abstract: I00MH 851G 8511
Contextual Info: Ordering number:EN 851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor N0.851G HF Amp Applications Use . I d e a l l y s u i t e d f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , c o n v e r t e r s , IF a m p l i f i e r s .

2SA1177

Contextual Info: Ordering number:EN 851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor N0.851G HF Amp Applications Use . I d e a l l y s u i t e d f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , c o n v e r t e r s , IF a m p l i f i e r s .

HT - 0886

Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
Contextual Info: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2

la 5531

Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
Contextual Info: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£

JE 800 transistor

Abstract: 2SK591 JE 33 TT 46 N 800 TC-6070 sje transistor
Contextual Info: NEC m MOS ^ T iv r x Field E ffe c t P o w e r T r a n s is to r 2SK591 7 -M N ft^ ^ / < i i f f O S FE T l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK591ii, N f t i ' tl'WLB'^7-M O S FETT\ 5 V « « * IC iO ib KWM f - i i : mm

Contextual Info: Compound Transistor G Σ ÎÆ f* 3 M P N P ^ ft I M 1 L 4 M > ' 3 > : mm) m o A<'f T X IE in; £ f*aM L T ^ i 1 0 Ri = 47 kQ, R 2= 47 kQ) c B o—V A — Ri —V v \ —'* Rs o E OGA1L4M t =? >7° IJ / > 9 U M arking (T a —25 °C ) *1 a v 9 •3 v 9 9

TC-6252

Abstract: TC6252 WJ M64
Contextual Info: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m

2SA1177

Abstract: hf power amplifiers 2-30 mhz
Contextual Info: Ordering number: EN 7 tì ci7G7ti 0 0 1 5 5 1 5 851G 44D 2SA1177 SAiYO PNP Epitaxial Planar Silicon Transistor i HF Amp Applications Use f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , . Id e a lly s u ite d IF a m p l i f i e r s .

L46R

Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
Contextual Info: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l

transistor 1201 1203 1205

Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
Contextual Info: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).

PCF7931AS

Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Contextual Info: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

B200

Contextual Info: MAXIMUM solutions TO-5 and TO-100 Through-Hole and Surface Mount Transistor Sockets TO-5 and TO-100 transistor sockets make field insertion and removal easy and convenient. Inside each transistor socket are precision-machined, brass alloy receptacles assembled with a Mill-Max, 4-finger

Contextual Info: Philips Sem iconductors bb53*131 □03212*1 STD • APX Product specification NPN 1 GHz wideband transistor BFW16A N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

Contextual Info: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and

SCR based induction furnace circuit diagram

Abstract: sprague 11z12 two way solenoid valve schematic diagram circuit schematic diagram induction heater SCR induction furnace circuit diagram triac applications circuit diagram CA3059 equivalent dc 220v motor speed control circuit with scr automatic change over switch circuit diagram three phase scr control induction heater circuit
Contextual Info: Harris Semiconductor No. AN6182.1 Harris Intelligent Power April 1994 FEATURES AND APPLICATIONS OF INTEGRATED CIRCUIT ZERO-VOLTAGE SWITCHES CA3059 AND CA3079 Authors: A.C.N. Sheng, G.J. Granieri, J. Yellin, and T. McNulty CA3059 and CA3079 zero-voltage switches are monolithic