TRANSISTOR BV 32 Search Results

BC847U

Abstract: BC857U
Contextual Info: BC857U Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847U Ordering Information Type NO. Marking Package Code BC857U BV SOT-323

BC847UF

Abstract: BC857UF
Contextual Info: BC857UF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847UF Ordering Information Type NO. Marking BC857UF Package Code BV SOT-323F

2sd1763

Contextual Info: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)

2N705

Abstract: I960 ARMv Germanium mesa
Contextual Info: MIL-S-19500/86A 20 March 19o4_ SUPERSEDING MII/-S-19500/86 NAVY 6 June I960 ' MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPE 2N705 This specification has been approved bv the Department of Defense agd is mandatory for use by the Department^ of the Armv. the Navv.

I-348

Abstract: i348 TIR31 i346 IRFM360 IRFM360D IRFM360U I*348 9712A
Contextual Info: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER i R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ài IRFM360 N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part N um ber BV q s S

2N5326

Abstract: OTC2220 OTC2420 SVT60-5 SVT80-5
Contextual Info: OPTEK TE CH N O L O G Y INC 4flE D • bV T& Sa D □□G13ût. SST ■ OTK Product Bulletin OTC2420 August 1990 High Speed NPN Switching Transistor Die Type OTC242Q 80V, 5A Applications • Low Voltage Inverters • Pulse Amplifiers • Base Drive Circuits

IRFM064

Abstract: beryllium oxide international rectifier cds
Contextual Info: Data Sheet No. PD-9.875 INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ64 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFE T® technology is the key to International Part Num ber BV q s S IR F M 0 6 4

s9093

Abstract: AD131 TC 2-25
Contextual Info: M O T O T O 'm fl Order this document i ;f/|ic0 II ILC 'OR TECHNICAL DATA bv bul45d2/d BUL45D2 Designer's Data Sheet POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter

Contextual Info: Data Sheet No. PD-9.727A INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM460 ;: N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number bv d s s Rectifier’s advanced line of power M O S FE T transistors.

2SB1186

Contextual Info: 2SB1186 / T ransistors x tf $ * > T i ^ - f PNP V V =3 > h 7 > V * 2 Epitaxial Planar PNP Silicon Transistor ig;JÍ}Jfc1t2jíSlfÍffl/Low Freq. Power Amp. 2SB 1186 • £t-Jfí\t‘jílII,/D ¡m ens¡on s U n it: mm & & 1) BV c e O = _ 160V 4.5 1 r r 2) S O A f r 'K l'o

Contextual Info: h 7 > y ^ $ / T ransistors 2 3 1 1 5 0 9 2SD1562 I t 0^ = 5 r V 7 ^ 7 V - ^ NPN y 'J = l> V y > v * $ 1SJRl>Jt ^3i^ll iff l/ L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • 1) Dimensions U n it: mm) VJ-^J V: V vJ i t • <HS£ ® K 1 ± T & 5 (BV Ceo = 120V)o

SOT89 transistor marking 5A

Abstract: ZX5T951Z ZX5T951ZTA 5A SOT89
Contextual Info: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

marking 951

Abstract: SOT89 transistor marking 5A ZXTP2012Z ZXTP2012ZTA
Contextual Info: ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

BC327

Abstract: BC307 BC328 BC338 BC337 pnp transistor
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol C ollector-E m itter Voltage

2SB1147

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Very low VcEfsat). 2.9+0.2 VcE(sat) — — 0.13V (Typ.) (Ic /Ib 1 1+0-2 1;1— 0.1 = 500m A /50m A ) . ± 0.1 08 J3 2) H igh cu rre n t c a p a c ity in co m p a ct

PH1516-100

Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

TRANSISTOR BV 32

Abstract: transistors MRF454 HF75-12 MRF454 SD1405
Contextual Info: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 18 dB Typical @ 30MHz & 75W • Withstands 20:1 Load VSWR

2sb1147

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K •Features ^External dim ensions (Units: mm) 1) Very low VcE(sai). 2 .9 ± 0 .2 VcE(sat) = — 0.13V (Typ.) ( Ic / I b 1 1+02 — 0.1 1.9±0.2 = 500m A/50m A) n 0,8±0.1 0.950.95 2) H igh cu rre n t c a p a c ity in co m p a c t

mrf433

Abstract: HF20-12F SD1285 Transistor MRF433 3055a
Contextual Info: HF20-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF20-12F is Designed for 12.5 V Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF433 & SD1285 • PG = 18 dB Typical at 30MHz & 20W • Withstands 20:1 Load VSWR

high frequency transistor

Abstract: S21C2
Contextual Info: OSC-0.3CP NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE .138 2L PILL DESCRIPTION: The OSC-0.3CP is a High Frequency Transistor designed for C Band Oscillator Applications. 0.095 0.105 0.023 0.027 FEATURES: • POUT = 320 mW Typ. at 7.5 GHz • Gold Metalization

transistor bc 537

Abstract: BCW61A BCW61C TRANSISTOR BV 32 BD marking BCW61D
Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic SOT-23 T a = 2 5 T : Symbol Rating Unit VcBO VcEO -32 -32 -5.0 -100 350 -55-150 V Cllector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1766 Features • • • 2.0Amp Medium Power Transistor 32 Volts Low VCE sat : VCE(sat) =0.5V(Typ.)(IC/IB=2.0A/0.2A) Complements the 2SB1188

"PNP Transistor"

Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
Contextual Info: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

TRANSISTOR BV 32

Abstract: HF50-12 hf50
Contextual Info: HF50-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band. FEATURES INCLUDE: • High Gain, 16 dB Typical @ 30 MHz • Emitter Ballasting