TRANSISTOR BV 32 Search Results

BC847U

Abstract: BC857U
Contextual Info: BC857U Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847U Ordering Information Type NO. Marking Package Code BC857U BV SOT-323

BC847UF

Abstract: BC857UF
Contextual Info: BC857UF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847UF Ordering Information Type NO. Marking BC857UF Package Code BV SOT-323F

2sd1763

Contextual Info: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)

I-348

Abstract: i348 TIR31 i346 IRFM360 IRFM360D IRFM360U I*348 9712A
Contextual Info: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER i R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ài IRFM360 N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part N um ber BV q s S

2N5326

Abstract: OTC2220 OTC2420 SVT60-5 SVT80-5
Contextual Info: OPTEK TE CH N O L O G Y INC 4flE D • bV T& Sa D □□G13ût. SST ■ OTK Product Bulletin OTC2420 August 1990 High Speed NPN Switching Transistor Die Type OTC242Q 80V, 5A Applications • Low Voltage Inverters • Pulse Amplifiers • Base Drive Circuits

IRFM064

Abstract: beryllium oxide international rectifier cds
Contextual Info: Data Sheet No. PD-9.875 INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ64 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFE T® technology is the key to International Part Num ber BV q s S IR F M 0 6 4

s9093

Abstract: AD131 TC 2-25
Contextual Info: M O T O T O 'm fl Order this document i ;f/|ic0 II ILC 'OR TECHNICAL DATA bv bul45d2/d BUL45D2 Designer's Data Sheet POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter

Contextual Info: h 7 > y ^ $ / T ransistors 2 3 1 1 5 0 9 2SD1562 I t 0^ = 5 r V 7 ^ 7 V - ^ NPN y 'J = l> V y > v * $ 1SJRl>Jt ^3i^ll iff l/ L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • 1) Dimensions U n it: mm) VJ-^J V: V vJ i t • <HS£ ® K 1 ± T & 5 (BV Ceo = 120V)o

SOT89 transistor marking 5A

Abstract: ZX5T951Z ZX5T951ZTA 5A SOT89
Contextual Info: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

marking 951

Abstract: SOT89 transistor marking 5A ZXTP2012Z ZXTP2012ZTA
Contextual Info: ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

2SB1147

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Very low VcEfsat). 2.9+0.2 VcE(sat) — — 0.13V (Typ.) (Ic /Ib 1 1+0-2 1;1— 0.1 = 500m A /50m A ) . ± 0.1 08 J3 2) H igh cu rre n t c a p a c ity in co m p a ct

PH1516-100

Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1766 Features • • • 2.0Amp Medium Power Transistor 32 Volts Low VCE sat : VCE(sat) =0.5V(Typ.)(IC/IB=2.0A/0.2A) Complements the 2SB1188

"PNP Transistor"

Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
Contextual Info: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

bc328c

Abstract: lt 328
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage

transistor c327 25

Abstract: BC327 C327
Contextual Info: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337IBC338 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector Emitter Voltage

ZDS1009

Abstract: PCF 7900 bq2954 S1009 DV2954S1H FMMT451 FZT789A high side current mirror sensing
Contextual Info: Application Note 32 Issue 1 January 2000 Features and Applications of the ZDS1009 Current Mirror/Level Translator Neil Chadderton Introduction The ZDS1009 current mirror has been developed specifically for high side, current sense plus level translation applications and as such will find a

JX5417

Abstract: diode tfk s 220 transistor b 595 PH0810-150 AF100 TFK 03
Contextual Info: yMâcGM Æ a n A M P com pany Wireless Bipolar Power Transistor, 150W 850 - 960 MHz PH0810-150 Features • • • • D esigned for Linear A m plifier A pplications Class AB: -32 dBc Typ 3 rd 1MD at 150 W atts PEP C o m m o n E m itter C o n fig u ratio n

Contextual Info: 2 S C 4 0 6 1 K / 2 S C 3 4 1 5 S / 2 S C 4 0 1 5 / 2 D C 32 71 F Transistors 2S C 4 9 3 8 / 2 S C 4 1 29 I High-voltage switching Transistor 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F •F e a tu re s •A b s o lu te maximum ratings T a = 2 5 'C 1 ) H ig h b re a k d o w n v o lta g e . (B V ceo — 3 0 0 V )

Contextual Info: KSA1242 PNP EPITAXIAL SILICON TRANSISTOR CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER • hFE= 100-320 VCE = -2V, lc = -0.5V • hFE= 70(Min) (V ce = -2V, lc = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating Unit

Contextual Info: 2SD2142K / 2SC2062S 2SD2470 Transistors High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S I •F e a tu re s 1 ) Darlington connection for a high Fif e . (Min. 5000 atVcE/lc~3V/0.1A) 2 ) High input impedance. •A b s o lu te maximum ratings (Ta—2 5 t )

nec optocoupler

Abstract: igbt display plasma optocouplers 3030 optocoupler 4-pin dip open collector transistor NEC 2500 PS9301 DIP4 gull wing SSOP12 NEC K 2500 PS8551
Contextual Info: N E C E l ec t r o n i c s O P TO C O U P L E RS — 2 0 0 8 California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Division of NEC Electronics Corporation CSDD . These include

i580p

Contextual Info: • a ■ M m w aienow n, mm ic m s e m 580 P leasant St. W a te rto w n , M A 02172 PH: 617 926-0404 FAX: (617) 924-1235 i 2N3251A Features • • • • 60 Volts 200 mAmps Meets MIL-S-19500/323 Collector-Base Voltage 60V Collector Current: 200 mA Fast Switching 370 nS

D1758

Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
Contextual Info: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)