TRANSISTOR BV 32 Search Results

BC847U

Abstract: BC857U
Contextual Info: BC857U Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847U Ordering Information Type NO. Marking Package Code BC857U BV SOT-323

BC847UF

Abstract: BC857UF
Contextual Info: BC857UF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847UF Ordering Information Type NO. Marking BC857UF Package Code BV SOT-323F

Contextual Info: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS2502 -1 ,-2 ,-4 PS2502L -1,-2, -4 FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN • HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP

sem 2005 ic equivalent

Contextual Info: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line

Contextual Info: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits,

Contextual Info: ZXT790AK 40V PNP M EDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUM M ARY BV CEO = -40V : RSAT = 83m ; IC = -3A DESCRIPTION Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power

Contextual Info: ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BV CEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in

2sd1763

Contextual Info: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)

2N705

Abstract: I960 ARMv Germanium mesa
Contextual Info: MIL-S-19500/86A 20 March 19o4_ SUPERSEDING MII/-S-19500/86 NAVY 6 June I960 ' MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPE 2N705 This specification has been approved bv the Department of Defense agd is mandatory for use by the Department^ of the Armv. the Navv.

Contextual Info: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE ¡^25021!Y V MULTI OPTOCOUPLER SERIES *4 FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN • HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP P S2502-1, -2, -4 and PS2502L-1, -2, -4 are optically coupled

I-348

Abstract: i348 TIR31 i346 IRFM360 IRFM360D IRFM360U I*348 9712A
Contextual Info: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER i R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ài IRFM360 N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part N um ber BV q s S

2N5326

Abstract: OTC2220 OTC2420 SVT60-5 SVT80-5
Contextual Info: OPTEK TE CH N O L O G Y INC 4flE D • bV T& Sa D □□G13ût. SST ■ OTK Product Bulletin OTC2420 August 1990 High Speed NPN Switching Transistor Die Type OTC242Q 80V, 5A Applications • Low Voltage Inverters • Pulse Amplifiers • Base Drive Circuits

IRFM064

Abstract: beryllium oxide international rectifier cds
Contextual Info: Data Sheet No. PD-9.875 INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ64 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFE T® technology is the key to International Part Num ber BV q s S IR F M 0 6 4

s9093

Abstract: AD131 TC 2-25
Contextual Info: M O T O T O 'm fl Order this document i ;f/|ic0 II ILC 'OR TECHNICAL DATA bv bul45d2/d BUL45D2 Designer's Data Sheet POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter

2SA1633

Abstract: 2SC4278
Contextual Info: h Z7> y 7 .2 /Transistors 2SA1633 2SA1633 I t f ^ = r '> 7 ^ 7 ° U - t ^ P N P h ÿ > y * $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • 1 5 rliilS l/D im en sio ns Unit : mm) ,Q T cfc •£> o I6 0 ^3.3 ± 0 .1 BV cEO = — 150V 5.0 * § 'f

2SB1186

Contextual Info: 2SB1186 / T ransistors x tf $ * > T i ^ - f PNP V V =3 > h 7 > V * 2 Epitaxial Planar PNP Silicon Transistor ig;JÍ}Jfc1t2jíSlfÍffl/Low Freq. Power Amp. 2SB 1186 • £t-Jfí\t‘jílII,/D ¡m ens¡on s U n it: mm & & 1) BV c e O = _ 160V 4.5 1 r r 2) S O A f r 'K l'o

Contextual Info: h 7 > y ^ $ / T ransistors 2 3 1 1 5 0 9 2SD1562 I t 0^ = 5 r V 7 ^ 7 V - ^ NPN y 'J = l> V y > v * $ 1SJRl>Jt ^3i^ll iff l/ L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • 1) Dimensions U n it: mm) VJ-^J V: V vJ i t • <HS£ ® K 1 ± T & 5 (BV Ceo = 120V)o

SOT89 transistor marking 5A

Abstract: ZX5T951Z ZX5T951ZTA 5A SOT89
Contextual Info: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

marking 951

Abstract: SOT89 transistor marking 5A ZXTP2012Z ZXTP2012ZTA
Contextual Info: ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

BC327

Abstract: BC307 BC328 BC338 BC337 pnp transistor
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol C ollector-E m itter Voltage

2SD1380

Abstract: TRANSISTOR BV 32
Contextual Info: Is 7 > V £ /Transistors 2SD1380 7 ; I/ 7° b - * Jg NPN y V □ > b 7 > V 7. $ X kf * * y 2SD 1380 Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. • ^ J fir H ilH /D im e n s io n s Unit : mm 1) VcEO= 32V, lc= 2A, Pc= 10W<D?A mt-iT’T&Zc 2) 2SB10091 =l > -f'J ? A 3 0

2SB1147

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Very low VcEfsat). 2.9+0.2 VcE(sat) — — 0.13V (Typ.) (Ic /Ib 1 1+0-2 1;1— 0.1 = 500m A /50m A ) . ± 0.1 08 J3 2) H igh cu rre n t c a p a c ity in co m p a ct

PH1516-100

Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

TRANSISTOR BV 32

Abstract: transistors MRF454 HF75-12 MRF454 SD1405
Contextual Info: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 18 dB Typical @ 30MHz & 75W • Withstands 20:1 Load VSWR