TRANSISTOR BU 102 Search Results

t 326 Transistor

Abstract: 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5
Contextual Info: E5C D Ml fl235bOS G0GMÔ4M 'i H S 1 E G , NPN Silicon Power Transistor BU 326 A -SIEMENS AKTIENÛESELLSCHAF BU 3 2 6 A is a triple diffused silicon N PN power switching transistor in TO 3 case 3 B 2 DIN 4 18 7 2 . It is outstanding for short switching times and high dielectric strength and is

transistor tt 2206

Abstract: TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor
Contextual Info: ESC D Ml fl2 3 5 bOS G 0 G M Ô 4 M *] H S 1 E G , NPN Silicon Power Transistor BU 326 A - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is

Contextual Info: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

BUZ74A

Abstract: T0220AB BUZ-74A
Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCR ETE BU Z74A ObE D ^53^31 0014S14 2 I May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,

BUZ84

Contextual Info: N AMER PH IL IP S/ D I S CR E T E PowerMOS transistor ObE D • bb53T31 O O m b l b BU Z84 1 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

transistor N100

Abstract: N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911
Contextual Info: N AMER P H I L I PS /D I SC RE T E ObE D • tb53131 Power M OS transistor OOIMSOO BU Z42 5 r - 3 7 -\i May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

on 2518 transistor

Abstract: transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • Ô ^ Ü O T b 000e]Liö3 3 ■ ALG6 • BU 536 'ïTifLf FMKdM electronic CreativeTecbnotojpe* T-33-11 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique • Short switching time

V103 TRANSISTOR

Abstract: BUZ80A T0220AB V103 buz80
Contextual Info: PowerM OS transistor_ BU Z80A _ N AMER PHI LI PS /D I SC RE T E DtE D • ^53131 GOmSMT ~ T ■ T - - S 9 - I I May 1987 G EN ER A L DESCRIPTION N-channel enchancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in

BUK437-500A

Abstract: BUK437-500B
Contextual Info: N AflER PHILIPS/DISCRETE 25E D • ^53131 00E03S0 fi ■ P o w erM O S tra n s is to r B U K 437-500A BU K 437-500B T - s 7 - 15- GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK437-500A

Abstract: 0020325 BUK437-500B
Contextual Info: N AflER PHILIPS/DISCRETE 25E D ^53131 0 0 E0 3 E0 fi B U K 437-500A BU K 437-500B P o w erM O S tra n s isto r I ¿ 7 -1 5 - GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BU712

Abstract: transistor b 745 bu112 boitier to3 transistor BU 112
Contextual Info: BU 112 NPN S ILIC O N TR A N S IS TO R , MESA TR AN S IS TO R NPN S IL IC IU M , MESA - This transistor is primarily intended for deflection circuits applications in color T V receivers fitted with 90° kinescope Ce c irc u it est destiné a u x app lica tions de c irc u its de déviation

transistor BU 104

Abstract: TRANSISTOR 612 transistor BU 102 transformer ferrite core transistor BU 110 BU104 emetteur power transfo deflexion coil transformer ferrite
Contextual Info: BU 104 NPN S IL IC O N T R A N S IS T O R , D IF F U S E D M E S A TRAN SISTO R NPN SILICIUM, M ESA D IFFU S E Th e B U 1 0 4 is a fast switching high voltage transistor. It is p rim a rly intended fo r use in ho rizontal d e fle x io n o u tp u t stage o f black and

Contextual Info: Typ» Products p»9* BU 24 6 O Silicon Monolithic IC 1/19 Base Chip Specifications Product 4-bit 1-chip microcomputer Type BU2460 Dimensions Figure-1 Block diagram Figure-2 Plastic mold Features •Program memory (On-chip ROM): 1024 bytes •Data memory (On-chip RAM)

A1306 TRANSISTOR

Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)

carlogavazzi

Abstract: K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT
Contextual Info: Overview2004CA.qk 12/16/04 11:29 AM Page 1 Gross Automation 877 268-3700 • www.carlogavazzisales.com · sales@grossautomation.com Overview2004CA.qk 12/16/04 11:29 AM Page 2 CARLO GAVAZZI – A Global Force In Offering the Complete Package CARLO GAVAZZI offers a vast array of high quality products, which provide you the optimum solutions to your

Contextual Info: hONm Type Products BU3 4 6 1 Silicon Monolithic IC Base Chip Specifications 4-bit 1-chip microcomputer Product BU3 4 6 1 Type Dimensions Figure-1 Block diagram Figure-2 P la s tic mold Features Program memory (On-chip ROM): 1024 bytes Data memory (On-chip RAM)

transistor BUD 87

Abstract: sA 673 transistor smd transistor bu telefunken ha 800
Contextual Info: Te m ic BUD86 • BUD87 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • G lass passivation • Short sw itching tim es Applications E lectronic lam p ballast circuits Sw itch-m ode pow er supplies

T1 SL 100 NPN Transistor

Abstract: SL 100 NPN Transistor transistor BU 102
Contextual Info: BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE C o p y rig h t 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability FEBRUARY 1994 - REVISED SEPTEM BER 1997

BUW12 PHILIPS

Abstract: BUW12 BUW12A
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW12; BUW12A High-voltage, high-speed, glass-passivated npn power transistors in a S O T 9 3 envelope, intended fo r use in converters, inverters, switching regulators, m o to r control systems etc.

PT200 RTD reference table

Abstract: PT200 Platinum RTD reference table RTD SENSING CIRCUIT 4-20mA burr-brown Model 4203 rtd temperature instrumentation amplifier circuit Burr-Brown 4203 PT200 Platinum RTD table PT200 rtd U/25/20/TN26/15/850/CTC 313 transistor pin diagram PT200 Platinum
Contextual Info: For Im e â ia le Assistance, Coalaci Your Local Salesperson BU R R -B R O W N XTR103 |g » B 4-20mA Current Transmitter with RTD EXCITATION AND LINEARIZATION FEATURES APPLICATIONS • LESS THAN ±1% TOTAL ADJUSTED ERROR, -40°C TO +85°C • RTD EXCITATION AND LINEARIZATION

BUV18

Abstract: transistor buv 90 BUV19 transistor buv BUV18-BUV19
Contextual Info: •_?52T237 QD2Ô>71J? 'T '3 'S - I S SGS -THOMSON S G S-THOMSON BUV18 BUV19 3QE » NPN HIGH CURRENT SWITCHING TRANSISTORS HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE AT 40A FAST TURN-OFF AND TURN-ON DESC RIPTIO N High current, high speed transistors suited for low

Contextual Info: TOSHIBA GT25G102 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT2 5 G 102 U nit in mm STROBE FLASH APPLICATIONS • • • • H igh Input Impedance Low Saturation Voltage : VQ E say = 8V (Max. (Ic = 150A) Enhancement-Mode 12V Gate Drive

transistor kt 326

Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice

BU2461

Contextual Info: Products Page Type Silioon Monolithic IC 1/19 B U 2 4 6 1 Base Chip Specifications Product 4-bit 1-chip microcomputer BU2461 Type Dimensions Figure-1 Block diagram Figure-2 Plastic mold Features •Program memory (On-chip ROM): 1024 bytes •Data memory (On-chip RAM)