0020325 Search Results

BUK437-600B

Abstract: ATIC BUK437-600A
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 0020325 7 ■ PowerMOS transistor " BUK437-600A BUK437-600B T - 3 e? - 1S’ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: 2SE D N AUER PHILIPS/DISCRETE tbS3T31 0020325 7 BUK437-600A BUK437-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

250M

Abstract: IRFS820 IRFS821
Contextual Info: N-CHANNEL POWER MOSFETS IRFS820/821 FEATURES TQ-220F • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: M ic r o c h ip PIC16C6X 8-Bit CMOS Microcontrollers Devices included in this data sheet: PIC16C61 • PIC16C64A PIC16C62 • PIC16CR64 PIC16C62A • PIC16C65 PIC16CR62 • PIC16C65A PIC16C63 • PIC16CR65 PIC16CR63 • PIC16C66 PIC16C64 • PIC16C67 • Low-power, high-speed CMOS EPROM/ROM

MSM51V16160A

Contextual Info: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is

Contextual Info: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is

W06* MARKING smd code

Abstract: smd marking code W06 W08 mic SMD w06 DAT54 SMD805 smd w04 77 AMP 120527-1 M15N06 ADSP-21160
Contextual Info: Hardware Rev. 2.2 ADSP-21160 EZ-KIT Lite User Guide Part Number 500-00546 2000 Analog Devices, Inc. ALL RIGHTS RESERVED Analog Devices, Inc. Digital Signal Processing Division One Technology Way P.O. Box 9106 Norwood, MA 02062-9106 617 329-4700 Copyright Information

zener diode c24 5t

Contextual Info: Microelectronics Advance Data Sheet June 1996 Lucent Technologies Bell Labs Innovations T7234 Single-Chip NT1 SCNT1 Euro-LITE Transceiver Features Description • U- to S/T-interface conversion for ISDN basic rate (2B+D) systems — Integrated U- and S/T-interfaces

Bell-212a handshake sequence

Abstract: modem v.32
Contextual Info: RC144DPG € RC144DPG 3.3V, Low Power, V.32 bis Data/V.17 Fax/Voice Modem Data Pump > Rockwell INTRODUCTION FEATURES The Rockwell RC144DPG modem family consists of high speed, 3.3V, modem data pumps that support data rates up to 14400 bps, fax operation up to 14400 bps, and

DIODE C536

Abstract: C536 IRGTIN050M12 C535 transistors C537 DIODE C538 IOR 536 mosfet 600V 50A irgtin IG8T
Contextual Info: PD-9.1167 bitemational ïorJRectifier IRGTIN050M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 50A • Rugged Design .Simple gate-drive .Switching-Loss Rating includes all "tail" losses .Short circuit rated V ce ON < 2.7V tsc> 10 ms