IRGTIN Search Results

power mosfet 150A

Abstract: IGBT G 1010 IRGTIN150K06
Contextual Info: Provisional Data Sheet PD-9.1194 S R e ctifie r IRGTIN150K06 “HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VŒ = 600V lc = 150A Vce ON < 2.7V • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail" losses • Short circuit rated

Contextual Info: International Hü Rectifier Provisional D ata S h eet P D -9 .1 193 IRGTIN100K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE - 600V lc = 100A Vce O N <2.7V • R u g g e d D esig n tsc> 10ps •S im p le g a te -d riv e •S w itc h in g -L o s s R atin g inclu des all "tail"

diode c446

Contextual Info: Provisional Data Sheet PD-9.1156 ira] Rectifier IRGTIN075M06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE = 600V lc =75A V ce ON < 2.0V .Rugged Design »Simple gate-drive •Switching-Loss Rating includes all "tail” losses • Short circuit rated

c548 st

Contextual Info: International B Rectifier p— »d-»« « IRGTIN100M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 100A «Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losse s .Short circuit rated Vce ON < 2.7V

Contextual Info: International k*r]Rectifier Provisional Data Sheet PD-9.1155 IRGTIN050M06 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK VŒ = 600V lc = 50A Vce ON < 2.0V .Rugged Design • Simple gate-drive .Switching-Loss Rating includes all "tail" losses • Short circuit rated

Contextual Info: International ür]Rectifier Provisional Data Sheet PD-9.1158 IRGTIN150M06 Low conduction loss IGBT “HALF-BRIDGE" IGBT INT-A-PAK Vce=600V lc = 150A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

c531 diode

Abstract: diode C531 C532 diode C529 DIODE IRGTIN025M12 C529
Contextual Info: International kjrJRectifier PD-9.1166 IRGTIN025M12 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK •Rugged Design .Simple gate-drive .Switching-Loss Rating includes all “tail" losses .Short circuit rated Description IR's advanced IGBT technology is the key

mosfet 600V 100A

Abstract: 100A 1000V mosfet C547 b c548 IRGTIN100M12
Contextual Info: jl j Preliminary Data Sheet PD-1169 SÔR Rectifier IRGTIN100M12 “H A LF-B RIDG E" IG B T INT-A-PAK Low conduction loss IG B T .Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated Description IR's advanced IGBT technology is the key

IRGTIN075M12

Abstract: diode C546
Contextual Info: International S Rectifier PD9,æ IRGTIN075M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT Half-Bridge 40—L • Rugged Design •S im p le gate-drive •S w itching-Loss Rating includes all "tail" losses •S h ort circuit rated V CE= 1 2 0 0 V

irgtin

Contextual Info: International æpriRectifier Provisional Data Sheet P D -9 1157 IRGTIN100M06 "HALF-BRIDGE" IG B T INT-A-PAK Low conduction loss IG B T V Œ = 600 V lc = 100A V ce O N < 2.0V • Rugged Design .Simple gate-drive .Switching-Loss Rating includes all "tail"

diode c449

Abstract: irgtin
Contextual Info: International S R e ctifie r Provisional Data Sheet PD-9.1158 IRGTIN150M06 “HALF-BRIDGE“ IGBT INT-A-PAK Low conduction loss IGBT Vce=600V lc = 150A /ce ON <2,OV • Rugged Design •Sim ple gate-drive •Switching-Loss Rating includes all "tail" losses

IRGTIN075M12

Abstract: diode C546 C541 DIODE DIODE C545 irgtin igb1 diode c544 Diode C541
Contextual Info: International P r]Rectifier PM1,H' IRGTIN075M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT Half-Bridge p i f-o 3 VCE= 1200V 4o— 1|^ , lc = 7 5 A 5=— -4_ •Rugged Design ■Simple gate-drive ■Switching-Loss Rating includes all “tail"

wt 3 diodo

Abstract: DIODO 42 40
Contextual Info: kitemational l ü Rectifier Provisional Data Sheet PD-9.1192 IRGTIN075K06 Low conduction loss IGBT •HALF-BRIDGE“ IGBT INT-A-PAK Half-Bnidge VCE = 600V — o3 H l 5«— 4 • R ugged Design 'S im p le gate-drive •Sw itching-Loss Rating includes all "tail*

Contextual Info: International lÏMtlRectifier Provisional Data Sheet PD-9.1191 IRGTIN050K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK Half-Bridge n — o3 V CE = 6 0 0 V lc = 5 0 A V ce O N < 2 .7 V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"

Contextual Info: International H Rectifier Provisional Data Sheet PD-91157 IRGTIN100M06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT CE 600V lc = 100A V ce ON < 2.0 V • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all “tail" losses • Short circuit rated

DIODE C536

Abstract: C536 IRGTIN050M12 C535 transistors C537 DIODE C538 IOR 536 mosfet 600V 50A irgtin IG8T
Contextual Info: PD-9.1167 bitemational ïorJRectifier IRGTIN050M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 50A • Rugged Design .Simple gate-drive .Switching-Loss Rating includes all "tail" losses .Short circuit rated V ce ON < 2.7V tsc> 10 ms

Contextual Info: International rai Rectifier Provisional Data S heet P D -9 .1 192 IRGTIN075K06 "H A LF-B R ID G E " IG B T IN T-A -PAK Low conduction loss IG B T V CE = 6 0 0 V lc = 75A •Rugged Design * Simple gate-drive * Switching-Loss Rating includes all "tail" losses

CGBT

Abstract: diode c446
Contextual Info: Provisional Data Sheet PD-9.1156 H Rectifier IRGTIN075M06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses • Short circuit rated Description IR's advanced IGBT technology is the key

igbt 500V 50A

Abstract: mosfet 500V 50A mosfet 600V 50A
Contextual Info: International ^Rectifier Provisional Data Sheet PD-9.1191 IRGTIN050K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 50A V ce ON < 2.7V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated

C1007

Abstract: tr c1008
Contextual Info: kitemational rai Rectifier Provisional Data Sheet PD-9.1193 IRGTIN100K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK VCE = 600V lc = 1 0 0 A V ce ON < 2.7V •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses

IRGTIN150K06

Abstract: c1009
Contextual Info: International HRectifier Provisional Data Sheet PD-9.1194 IRGTIN150K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT Vœ = 600V lc = 150A Vce ON < 2.7V • Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail" losses •Short circuit rated

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications