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power mosfet 150A

Abstract: IGBT G 1010 IRGTIN150K06
Contextual Info: Provisional Data Sheet PD-9.1194 S R e ctifie r IRGTIN150K06 “HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VŒ = 600V lc = 150A Vce ON < 2.7V • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail" losses • Short circuit rated

Contextual Info: International Hü Rectifier Provisional D ata S h eet P D -9 .1 193 IRGTIN100K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE - 600V lc = 100A Vce O N <2.7V • R u g g e d D esig n tsc> 10ps •S im p le g a te -d riv e •S w itc h in g -L o s s R atin g inclu des all "tail"

MMIC A06

Contextual Info: mL'EM P A C K A R D Thp\ HEW LETT- Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0700 Features • Cascadable 50 Q Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0 GHz

Contextual Info: W hìì H EW L E T T fttfifl P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0800 Features • U sable G ain to 6.0 GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz • Low Noise Figure: 3.0 dB Typical at 1.0 GHz

Contextual Info: warn HEWLETT K f t f l PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0500 Features • Cascadable 50 C2 Gain Block • High Output Power: +23 dBm Typical P, dB at 1.0 GHz • Low Distortion: 33 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at

Contextual Info: Thal H EW LETT* WLEM PA CK A R D Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02100 Features • Cascadable 50 Q Gain Block • Low Noise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz

HP MMIC INA

Contextual Info: Wag H E W L E T T s K"EM PA CK A R D Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03100 Features • C ascadable 50 £2 Gain B lock • Low N oise Figure: 2.5 dB Typical at 1.5 GHz • High Gain: 26.0 dB Typical at 2.8 GHz • 3 dB Bandwidth:

diode c446

Contextual Info: Provisional Data Sheet PD-9.1156 ira] Rectifier IRGTIN075M06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE = 600V lc =75A V ce ON < 2.0V .Rugged Design »Simple gate-drive •Switching-Loss Rating includes all "tail” losses • Short circuit rated

c548 st

Contextual Info: International B Rectifier p— »d-»« « IRGTIN100M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 100A «Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losse s .Short circuit rated Vce ON < 2.7V

Contextual Info: Wha% mL'ftm HEW LETT PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0500 Features • Cascadable 50 Q Gain Block • High Output Power: +23 dBm Typical Pi dB at 1.0 GHz • Low Distortion: 33 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at

mosfet 600V 100A

Abstract: 100A 1000V mosfet C547 b c548 IRGTIN100M12
Contextual Info: jl j Preliminary Data Sheet PD-1169 SÔR Rectifier IRGTIN100M12 “H A LF-B RIDG E" IG B T INT-A-PAK Low conduction loss IG B T .Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated Description IR's advanced IGBT technology is the key

Contextual Info: WhnI H EW L E T T wSKM PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0400 Features • Cascadable 50 fl Gain Block • 3 dB Bandwidth: DC to 4.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • 16.0 dBm Typical Pj dB at 1.0 GHz The MSA-series is fabricated using

irgtin

Contextual Info: International æpriRectifier Provisional Data Sheet P D -9 1157 IRGTIN100M06 "HALF-BRIDGE" IG B T INT-A-PAK Low conduction loss IG B T V Œ = 600 V lc = 100A V ce O N < 2.0V • Rugged Design .Simple gate-drive .Switching-Loss Rating includes all "tail"

diode c449

Abstract: irgtin
Contextual Info: International S R e ctifie r Provisional Data Sheet PD-9.1158 IRGTIN150M06 “HALF-BRIDGE“ IGBT INT-A-PAK Low conduction loss IGBT Vce=600V lc = 150A /ce ON <2,OV • Rugged Design •Sim ple gate-drive •Switching-Loss Rating includes all "tail" losses

Contextual Info: warn H EW L E T T mLfimPA CK A R D Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-01100 Features • C ascadable 50 Q Gain B lock • Low N oise Figure: 1.7 dB Typical at 100 MHz • High Gain: 32.5 dB Typical at 100 MHz • 3 dB Bandwidth:

Contextual Info: ffZ ffI H E W L E T T 1 PACKARD "KM Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0300 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0 GHz • 10.0 dBm Typical Pj dB at 1.0 GHz Description

Contextual Info: What mLliM HP AE CWKLAERTDT * Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0600 Features • Cascadable 50 Q. Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5 dB Typical at 0.5 GHz

Contextual Info: W OÊ H EW LETT 1"KM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0600 Features • Cascadable 50 £2 Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5 dB Typical at 0.5 GHz

Contextual Info: That HEWLETT mLUM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0100 Features • Cascadable 50 £2 Gain Block • 3 dB Bandwidth: DC to 1.3 GHz • High Gain: 18.5 dB Typical at 0.5 GHz • Unconditionally Stable k > l Description

Contextual Info: What mitim HPAECWKLAERTDT Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03100 Features • Cascadable 50Q Gain Block • Low Noise Figure: 2.5 dB Typical at 1.5 GHz • High Gain: 26.0 dB Typical at 2.8 GHz • 3 dB Bandwidth: DC to 2.8 GHz

Contextual Info: ThatHEWLETT miEM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0200 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k > l Description The MSA-0200 is a high perfor­

Contextual Info: International rai Rectifier Provisional Data S heet P D -9 .1 192 IRGTIN075K06 "H A LF-B R ID G E " IG B T IN T-A -PAK Low conduction loss IG B T V CE = 6 0 0 V lc = 75A •Rugged Design * Simple gate-drive * Switching-Loss Rating includes all "tail" losses

CGBT

Abstract: diode c446
Contextual Info: Provisional Data Sheet PD-9.1156 H Rectifier IRGTIN075M06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses • Short circuit rated Description IR's advanced IGBT technology is the key

MSA-0200-GP4

Contextual Info: W hat H E W L E T T * mLliMP A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0200 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 2 .8 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k > l The MSA-series is fabricated using