TRANSISTOR BJ 101 Search Results

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

SD1522

Abstract: SD1522-9 TACAN 41 M105 1090MHZ TACAN transistor
Contextual Info: H M / f / l t r l «-» f M ¡1 Progress Powered by Technology 140 C o m m e rc e D riv e M o n tg o m e ryy v ille , PA 18936-1013 c j Tel: 2 1 5 6 3 1 -9 8 4 0 r\r\M ra a a SD I 522-9 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS DESIGNATED FOR PULSE POWER IFF, DME,

tl3101

Abstract: Tesla transistor TL31011 TL3101C 0/TL3101
Contextual Info: TL3101I, TL3101C SILICON HALL-EFFECT SWITCH APRIL 1985— REVISED APRIL 1988 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • Buried Hall-Effect Cell Reduces Threshold

transistor k 4213 m

Abstract: transistor BJ 102 transistor k 4213 TRANSISTOR BJ 101 b206a KT-52
Contextual Info: 72 94621 POWEREX INC Tfl » F | 7 B cm b 2 1 m/vatex 3 | " D 'Ti S3-J5' KT521203 Powerex, Inc., Hlllts S treet, Yourtgwood, Pennsylvania 15697 412 925-7272 Split-Dual Darlington Transistor Module 30 Am peres/1200 Volts Description Powerex.Spiit-Dual Darlington Transistor

BCX71JLT1G

Contextual Info: BCX71JLT1G General Purpose Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage

BCX71J

Abstract: BCX71JLT1 BCX71JLT1G
Contextual Info: BCX71J General Purpose Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 Vdc Collector − Base Voltage

Contextual Info: BCX71JLT1G General Purpose Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage

V103 transistor

Abstract: BUZ41A transistor BUZ41 T0220AB V103
Contextual Info: PowerMOS transistor_ N AMER P H I L I P S / D I S C R E T E OLE D BUZ41A • bbSB'm _ 001M 4^3 1 ■ T " 2 * ì - |/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in

abb entrelec relays

Abstract: RB 121 A abb entrelec rb111 abb entrelec rb 121 relays 1000-5-12VDC 1SNA 115 144 R1300 RB121 RB 122 A 1sna 399 967 r0100 rb 121
Contextual Info: Short Form Catalogue Relays Optocouplers R600 Series Relays and optocouplers R600 series Summary R600 interfaces Description . 3 Relay interfaces

CN0352

Abstract: WD-VP1 B288 CM06 U231
Contextual Info: CN0352 Digital CMOS Imager The Gonexant CN0352 Digital CM06 Imager DQ chip is one component of Conexant Universal Serial Bus (USB) camera system. It can also be used as a standalone device for various applications requiring a QF resolution imager. The

abb entrelec relays

Abstract: RB 121 A 5-OBIC-0030 RB122BR 1SNA 103 002 R2600 RB122B abb entrelec rb 121 relays 1sna 115 935 r0400 1SNA 103 612 R2500 5-OBOC-1000-24VDC
Contextual Info: Short Form Catalogue Relays Optocouplers Relays and optocouplers Summary Applications - Technical data . 3 Selection guide - Relay modules . 4

BCX71J

Abstract: BCX71JLT1 SMD310 g 995
Contextual Info: BCX71J General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Collector-Emitter Voltage VCEO –45 Vdc Collector-Base Voltage VCBO –45 Vdc Emitter-Base Voltage VEBO –5.0 Vdc IC

AN-569

Abstract: BCX71J BCX71JLT1 MPS3905 MPS3906 SMD310
Contextual Info: BCX71J General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Collector-Emitter Voltage VCEO –45 Vdc Collector-Base Voltage VCBO –45 Vdc Emitter-Base Voltage VEBO –5.0 Vdc IC

c 4977 transistor

Abstract: TRANSISTOR C 5706 CQ 734 2SC4868 5P J TRANSISTOR MARKING use of ic 4094 transistor on 4977
Contextual Info: O rdering n u m b e r:EN5043 N°-5043 II 2SC4868 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-noise Amp Applications Features • Low noise : NF = 1.2dB typ f= IGIiz . •High gain: I S21e I 2= 13dB typ (f= 1GHz). •High cutoff frequency : f? = 9.0GHz typ.

T313-1

Contextual Info: POWEREX T - 3 1 - 3 1 ID226005 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual IGBTMOD Power Module SO Amperes/600 Volts Description Powerex IGBTMOD™ Modules are

3SK22

Abstract: transistor 3l2 3SK22-Y 10ID nf 0102 3SK2
Contextual Info: 3SK SILICON N-CHANNEL JUNCTION FIELD E FFE C T TRANSISTOR O Unit in mm O 058MAX. o FM Tuner and V.H.F Amplifier Applications • W ; HífígjfttfM'SI/» ! ÍS S = >y * ? * s' -* ¿4.95M A X 1 Qps = 20dB Typ. (f=100MHz) IO d NF= 2dB( Typ .) (f=100MHz) SW ;

tl3101

Abstract: TL3101C TL3101I TESLA transistor
Contextual Info: TL3101I, TL3101C SILICON HALL-EFFECT SWITCH A P R IL 1 9 8 5 — R E V I S E D A P R IL 1 9 8 8 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • LU P A C K A G E T O P V IE W

MGM5N45

Abstract: MGM5N50 MGP5N45 MGP5N50
Contextual Info: MGM5N45 MGM5N50 MGP5N45 MGP5N50 N-CHANNEL ENHANCEMENT MODE SILICON GATE, GAIN ENHANCED MOS FIELD EFFECT TRANSISTOR These GEMFETS are designed for high voltage, high current power controls such as line operated motor controls and converters. o High Input Impedance

8050d transistor

Abstract: winbond powerspeech W523X W56000 equivalent of transistor 8050 winbond powerspeech W528X W528X 8050 TRANSISTOR equivalent w528 W562S10
Contextual Info: W562XXX DESIGN GUIDE 2-tone Melody+ADPCM Voice Synthesizer BandDirectorTM Family INTRODUCTION The W562xxx is a family of multi-engine speech synthesizers. These synthesizers incorporate part of the following parts into a single chip: a simple 4-bit uC core (including RAM, register file,

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BCX70

Abstract: BCX71 BCX71G BCX71H BCX71J BCX71K BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX71 series PNP general purpose transistors Product specification Supersedes data of 1997 Apr 18 1999 Apr 20 Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES

TL 188 TRANSISTOR PIN DIAGRAM

Abstract: AD559 553C 244 0039J MP 1008 es fsr temperature weighing scale code example AD572 AD572S AD572SD
Contextual Info: A N A LO G D EVIC E S 12'Bit Successive Approximation Integrated Circuit A/D Converter FEATURES Performance True 12-B it O peration: M ax IMonlineariiry < ± 0 .0 1 2 % Low Gain T .C .: < ± 1 5 p p m /°C A D 5 7 2 B Low Power: 900m W Fast Conversion T im e: < 25/us

marking code ce SOT23

Contextual Info: DISCRETE SEMICONDUCTORS BCX71 series PNP general purpose transistors Product specification Supersedes data of 1997 Apr 18 Philips Semiconductors 1999 Apr 20 PHILIPS PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BCX71 series

Contextual Info: HS-245RH n n RADIATION HARDENED TRIPLE LINE TRANSMITTER C l3 HS-246RH, HS-249RH n V u T t^ Î RADIATION HARDENED TRIPLE LINE RECEIVERS HS-248RH December 1992 RADIATION HARDENED TRIPLE PARTY-LINE RECEIVER Pinouts Features • Radiation Hardened Dl Processing