TRANSISTOR BF 405 Search Results

Contextual Info: SIEMENS BF 660W PNP Silicon RF Transistor ’ For VHF oscillator applications Type Marking BF 660W LEs Ordering Code Pin Configuration Q62702-F1568 1=B Package 2= E 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage Values '/CEO 30 Collector-base voltage

Contextual Info: SIEMENS BF 775A NPN Silicon RF Transistor P relim inary Data F eature • E sp ecially su itable for a m plifiers in T V -sa t tuners E S D : E le ctro static d isch a rg e sensitive device, ob se rve handling precautions! T yp e BF 775 A O rd e rin g C ode

DSC5002

Abstract: BF200 transistor NC103 DSC-5002 RE03
Contextual Info: DSC5002 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DSC5002 Product type: Small Signal Bipolar Transistor NPN Parameters *$ .MODEL DSC5002 NPN + IS=72.000E-15 + BF=200 + NF=1 + VAF=110 + IKF=4.7 + ISE=310.0000E-18 + NE=1.28

Contextual Info: 33E D • Ô23b350 001bô30 1 M S I P Silicon N-Channel MOSFET Tetrode BF 998 SIEMENS/ SPCL-, SEMICONDS • Short-channel transistor w ith high S /C quality factor • For low-noise, gain-controlled input stages up to 1 GHz T -3 I-2 S ' Type M arkin g O rd erin g coda

TRANSISTOR BH RW

Contextual Info: Silicon N-Channei M OSFET Tetrode BF 998 • Short-channel transistor with high S/C quality factor G2 • For low-noise, gain-controlled input stages up to 1 GHz § Type M a rk in g O rdering code for v e rsio n s in bu lk O rdering co de for v e rs io n s on tape

ULN2003NA

Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
Contextual Info: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module

transistor BC 245

Abstract: transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor
Contextual Info: Summary of Types SIEMENS ICs for Satellite Receivers Page Type Function TDA 6130-5X4 2-GHz Mixer 22 TDA 6140-5X TV SAT IF-FM-Demodulator 30 TDA 6142-5X FM-Demodulator for SAT TV with Switchable Input 38 TDA 6151 -5;5X Satellite-Video IC 48 TDA 6160-2S Multistandard Sound IF

transistor BC 245

Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

transistor Bc 540

Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

BF 274 transistor

Abstract: CBC 548 B CBC 184 b transistor up/rse cima BF 184 transistor
Contextual Info: SIEM EN S NPN Silicon RF Transistor BFP 405 Featu res • • • For Low C urrent A pplicatio ns For O s cillators up to 12 GHz N oise Figure F = 1.15 dB at 1.8 G H z O utstand in g Gms = 22 dB at 1.8 G H z • • T ransition Frequ ency f j > 20 G H z G old m e talization for high reliability

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

BF 914 transistor

Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
Contextual Info: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability

transistor R 405

Contextual Info: SIEMENS SI EGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability

Infineon Technologies transistor 4 ghz

Contextual Info: SIEGET
25 BFP 405 NPN Silicon RF Transistor 3  For low current applications  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding Gms = 23 dB at 1.8 GHz  Transition frequency fT = 25 GHz  Gold metallization for high reliability

VPS05605

Abstract: BF 212 transistor TS1440
Contextual Info: SIEGET
25 BFP 405 NPN Silicon RF Transistor 3
For low current applications 4
For oscillators up to 12 GHz
Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

Infineon technology roadmap for mosfet

Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
Contextual Info: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.

siemens rs 1003

Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
Contextual Info: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability

Contextual Info: S tÊ g B S d CIRCUITS 405 'i S V B f i i T R IP L E S E R IA L A D D E R S • • • • • • • • • • IN V E R T INPUTS ON A L L AD D ER S FOR SUM C O M P LE M E N TIN G A P P LIC A T IO N S F U L L Y S T A T IC O P E R A T IO N DC TO 10 MHz TYP. ( V DD= 10V

transistors BC 543

Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: COS/MOS IN T EG R A T ED C IR C U IT S 4 0 4 .^ 6 , t 4 o ì \ > c= > r > w tu itm m m S g ' i ifw w «* PR ELIM IN A R Y DATA HEX BUFFER/CONVERTERS: HCC/HCF 4049UB - IN VE R TIN G TYPE HCC/HCF 4050B -N O N -IN V E R T IN G TYPE • H IG H S IN K C U R R E N T FOR D R IV IN G 2 T T L LOADS

2SC3953-SPICE

Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3