TRANSISTOR BC212 Search Results

MJE2955

Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

NPN Transistor BC548B

Abstract: BC548 BC238B npn bc337-40 npn transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB

NPN Transistor BC548B

Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
Contextual Info: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA

Contextual Info: BC212 SEMICONDUCTOR _ TECHNICAL DATA PN P EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR A B SO LU TE M A X IM U M R A T IN G S a t T a n * = 2 5 4C Sym bol R atin g C h aracteristic U nit Collector-Base Voltage V cbo -60 V Collector-Emitter Voltage V ceo

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

BC307A

Abstract: BC308B BC212A BC212B BC307B BC556A BC556B BC557A BCY77A BCY77B
Contextual Info: ELECTRICAL CHARACTERISTICS a TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P. SMALL SIGNAL TRANSISTORS hpE Dice Type BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC557A BC557B BCY70 BCY79A BCY79B BCY79C BCY71 2N3905 2N3906 BC213A BC213B BC213C

TRANSISTOR BC 413

Abstract: 212B BC212B ic 4700 Transistor BC212B
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212B SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V Min hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 1 2 3 C B E

BC212L

Contextual Info: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol

BC212L

Contextual Info: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol

BC212L

Contextual Info: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol

BC212

Abstract: TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V Min hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 2 3 C B E 0.135 - 0.145

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC212 TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

equivalent of transistor bc212

Abstract: BC212 data BC212 Transistor BC212 bc212* transistor
Contextual Info: BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage

bc212b

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.35 Collector current ICM : -0.1 Collector-base voltage V BR CBO : -60 TO—92 W （Tamb=25℃） 1. EMITTER

Transistor BC212B

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE

Contextual Info: TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE 3. COLLECTOR -60 V 1 2 3 Operating and storage junction temperature range

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

BC212C

Abstract: Transistor BC212 BC212
Contextual Info: M C C X 1 TO-92 P lastic-E n cap su late T ran sisto rs BC212,B,C TRANSISTOR PNP FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.