150TC Search Results

Contextual Info: Surface Mounting Device y b V T & ' f Schottky Barrier Diode # — F y - o m WÆ Twin Diode OUTLINE DIMENSIONS DF40SC3L Case : STO-220 10.2 = 02 n , 30V 40A Type No. ta tte r 2.4 ±0-a 40SC3L •SM D • T j 150TC Ü r n • Ê V f = 0 .4 5 V # P 0 .1 ±fil

BC212C

Abstract: Transistor BC212 BC212
Contextual Info: M C C X 1 TO-92 P lastic-E n cap su late T ran sisto rs BC212,B,C TRANSISTOR PNP FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e

SG20SC6M

Abstract: XW marking 251 3j diode marking aj tw-104
Contextual Info: Schottky Barrier Diode Twin Diode • fttg H SG20SC6M Package OUTLINE ' Unit • mm FTO-220G W eight 1.54g Typ 60V 20A 4.5 Feature • Tj=150TC Tj=150°C • 7 J IÆ -J U K Full Molded High lo Rating-Small-RKG M ain Use • D C /D C Switching Regulator DC/DC Converter

Diode LT 410

Abstract: S30SC4MT
Contextual Info: Schottky Barrier Diode Twin Diode m ftm m S30SC4MT o u t lin e Unit: mm Weight 5.2k Typ Package : MTO-3PT 40V 30A Feature • Ti=150TC Tj=150°C • 9 jcö V J'Ö TU Small 8 jc High lo Rating Main Use Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation

DIODE BY

Abstract: TI251
Contextual Info: G S150TA 25120 G S 150TC 25120 G S 150TI25120 Gallium Arsenide Schottky Rectifier I dc Isolated Surface Mount Package Type Part Number GS150 TI25120 Triple Independent 2 » } 250 GS150 TC25120 Triple Common cathode 250 250 GS150 TA25120 Triple Common anode

SHINDENGEN DIODE

Contextual Info: f f iH ü x '/W x y 3 y h V7 Surface Mounting Device ^ —K Schottky Barrier Diode Single Diode IW B tfä c E l D2FS6 OUTLINE DIMENSIONS Case : 2F o-w 60V 1.5A i} J ° ® hV 5» •/JvffiSM D • T j 150TC •PnnsM T l ^ y - y x U U I 1 • SR®S •D C /D C U V A - ?

Contextual Info: 7 3 7 h V T Ç ' Ï J ï - Y Schottky Barrier Diode *# s! Single Diode W Ë •Wfê-tfâEI D5S9M OUTLINE DIMENSIONS C a se : ITO-220 90V 5A • T j 150TC •P rrsm TA '^ V v iS S E • ^ J I/ E - J L / K m & • SRBS 9 D C / D C Z \y ){- 5 ’ • m a . < f-h . o A if t s

Contextual Info: v a -y K yom Schottky Barrier Diode Twin Diode M$W vh'ÆH OUTLINE DIMENSIONS SF10SC4R 4 0 V 10A • T j 150TC • P rrsm SI •» S B Œ 2 K V S IŒ •S R g à • D C /D C Z IV A '-Î? y - A . 0A«Ë§ • a n , K -5 > v > \;w m • Æ tëH RATINGS •ÎÈ fc liS ^ ïE lfë

Contextual Info: MR16R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: Schottky Barrier Diode Axial Diode mtm D2S4M OUTLINE Unit: mm Weight 0.38g Typ Package I AX078 30 40V 2A 8 3. Feature • PRRSM^y^ VÍ/X<SÍ¡E • D C /D C 3 • * Œ .y -A .O A * itg * <R0 H (D * Main Use • • • • • 7 27.5 5 27.5 • Tj=150°C

Contextual Info: LM 48824 LM48824 Class G Headphone Amplifier with I 2 C Volume Control T exa s In s t r u m e n t s Literature Number: SNAS479C B O O m r A udio Pow er A m p lifie r Series C la ss G Headphone Am plifier with I General Description 2C Volum e Control

circuit of rowa television

Abstract: toshiba b54
Contextual Info: TOSHIBA TH M R2E2Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2E2Z is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 2 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.

Contextual Info: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board.

Contextual Info: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.

toshiba a75

Abstract: ejdalf
Contextual Info: TOSHIBA THMR1E8-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108.864-WORD BY 18-BIT 128M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E8 is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB Direct Rambus DRAMs on a printed circuit board.

IR3M02A

Abstract: 1R3M02 IR3M02 ir3m02an IR3M02N IR9494 S-25 rsS85
Contextual Info: - 25 5 “ IR3M02,IR3M02N,IR3M02A,IR3M02AN x-f — t 'f t W t E 1S& • * * ; & v f y j ' ' *8*11 5 . « l6 W I ' — F ee C ± I R 9 4 9 4 C f f i A * B # e i ! e f / P E S jh [a ]i& F m K jr r 4 - # in U fc fc < D X -* S . I R 3 M 0 2 / N i I R 3 M 0 2 A / A N ( i H f » * * t l « 0 8 t t Ä ‘' S i : 2> .

uPC71D

Abstract: PC71D uPC71 sS2000 RA710 150TC PC71
Contextual Info: - 22 - fi P C 7 1 2 i TJ V '* U - * -e, m W j A t f , S /v S O l/X v ^ r - y F f f i t J ¿ ^ : o - C T T L te ¿ 'c o i^ jlg f e ill llis t f à — T ío 0 •T y 7 ¿ ^ ñ ^ J C Í i / í A 710 ¿ S ^ n T t Ë T * ^ ^ . T . = 2 5 0 24V V¡-c/? ± 7 V Fd + 5V

AD834

Abstract: AD834G
Contextual Info: AD834 5 0 0 M H z 4 ê tm r i- □ m f f i S t r y j >r-=s H v fflO 4 S K T t n / t f ä T , •í-'n c M L T 500MHz * x ? > h ? y X ' 3 y ^ > y x Ä * S 4 r t - t : i ' • e j* IW » (± X = Y = ± l V i O ¿ S , t Í I B / J ± 4 i n A i ; í : 5 J ; - 5 h ' J í y / S t i

TL496

Abstract: TL499A
Contextual Info: - 242 - T L 4 9 9 A '> 'J — * / T L 4 9 6 C ie ítA á p t I T ' \s * "f i i ä t l t y m * * £ H T î T * o î 7 5 ', 'J — X / X - f -y f - y / ' æ »?a^ < D a-c c ë t i n ? '* > . . t H t » * Œ I± 2 . 9 V A>Eb 3 0 V < D « S H T - t t . * lc jg S E B lllÉ - C * S .

Contextual Info: FPM21500QFN FPM21500QF N Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM21500QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process

AD834

Abstract: AD834G AD834J AD834S
Contextual Info: AD834 m 500MHz 4 êtm ri- □ f f i S t r y j > r-= s H v f f l O 4 S K T t n / t f ä T , •í-'n c M L T 500MHz * x ? > h ? y X ' 3 y ^ > y x Ä * S 4 r t - t : i ' • e j* IW » (± X = Y = ± l V i O ¿ S , t Í I B / J ± 4 i n A i ; í : 5 J ; - 5 h ' J í y / S t i

Contextual Info: SENELAB LTD 37E » DEC 3 i 1987 Ö1331Ö7 OÜGDlGä O • SMLB SEMELAB BDS10 BDS11 B DS12 NEW PRODUCT ^ SILICON NPN EPITAXIAL BASE TO 220 METAL MECHANICAL DATA Dimensions in mm 10-60 FEATURES rjf • HERMETIC TO 220 METAL PACKAGE it • HIGH RELIABILTY • ISOLATED OPTION

r770

Abstract: MAX752 MAX752M 1254
Contextual Info: - 358- MAX752 x t ï y • 7 7y • X CM os yí > • u i ' a u - í? i l l tu* maxim f j t € - K C ^ H 'X tSiU iSW sS; ( P W M ) 0 X t ■ y T ' - T - ^ - X -f ■ iB M E E Ii 2 H O Ä F + , L X to GND 1 .8 V « _ tO A * Œ 4 :1 5 V * T ; J ; 1 B V ' S Œ C « t