150TCAS Search Results

Contextual Info: FPM21500QFN FPM21500QF N Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM21500QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process

Contextual Info: SENELAB LTD 37E » DEC 3 i 1987 Ö1331Ö7 OÜGDlGä O • SMLB SEMELAB BDS10 BDS11 B DS12 NEW PRODUCT ^ SILICON NPN EPITAXIAL BASE TO 220 METAL MECHANICAL DATA Dimensions in mm 10-60 FEATURES rjf • HERMETIC TO 220 METAL PACKAGE it • HIGH RELIABILTY • ISOLATED OPTION

EBD21500QFN-AA

Abstract: FPM2750QFN FPM2750 lg 5528 FPM21500QFN
Contextual Info: FPM21500QFN FPM21500QF N Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM21500QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process

Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output

Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output

Contextual Info: FPM2750QFN FPM2750QFN Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM2750QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process

FPM2750

Contextual Info: FPM2750QFN FPM2750QFN Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM2750QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25 m process

X-band Gan Hemt

Abstract: x-band mmic lna TIC 1268 BiCmos 7400 FMA219-000SQ two bjt bc 107 A219 FMA219 MIL-HDBK-263 SiGe HBT GAIN BLOCK MMIC AMPLIFIER
Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output

FPM2750QFN

Abstract: FPM2750 0603 footprint IPC 1P503 EBD15PA
Contextual Info: FPM2750QFN FPM2750QFN Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM2750QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process

FPM2750

Abstract: FPM2750QFN QFN-style HBT transistor s parameters measures CAP-22nF-0603-10
Contextual Info: FPM2750QFN FPM2750QFN Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM2750QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process

FPM2750

Abstract: lg 5528 FPM2750QFN FPM21500 FPM21500QFN
Contextual Info: FPM21500QFN FPM21500QF N Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM21500QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process