TRANSISTOR BC 577 Search Results

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

transistor eft 323

Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
Contextual Info: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­

isl 6251 schematic

Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

bcw 95 transistor

Abstract: transistor NPN 3474 transistor bc 209 npn bc 301 transistor
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING • Low curren t max. 100 mA

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

transistor bc 577

Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2

Contextual Info: S E M I C O N D U C T O R , I N C TQ7541 D1 » V DCS-1800 Power Amplifier 1C v G3 >BC GND RFqut ^^DUT GND Features GND • 3 V, single supply • High efficiency Vß1/ß2 • 32 dBm output power V d2 • tow harmonics * Power TSS0P-2Q plastic package Product Description

transistor bc 577

Abstract: E64380 6N139 RL-270
Contextual Info: 6N139 H~h Sensitivity, H~h Speed OPIC Photocoupler 6N139 Unit : mm 1. High current transfer ratio (CTR: MIN. 500% at 1,= 1.6mA 2. High speed response (t,~~.: TYP. 0.2 ,us at R,=270Q ) 3. High commom mode rejection voltage (CM.: TYP. 500V/ p S) 4. TTL compatible output

transistor bc 649

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 17 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 FEATURES PINNING • Low curren t max. 100 mA

bc517

Abstract: transistor BC 157 BC517G BC517RL1 BC517RL1G BC517ZL1 BC517ZL1G BC517 model file
Contextual Info: BC517 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Collector −Emitter Voltage

transistor BC 157

Abstract: BC517 transistor bc 517
Contextual Info: BC517 Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage

Contextual Info: BC618 Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO 55 Vdc Collector −Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 12

UPD75P518GF-3b9

Abstract: E 13007-2 IC-2672 UPD75P518GF uPD75P518 13007-2 WM7 SMD transistor marking code pD75P518GF SMD TRANSISTOR MARKING code wm2 transistor 2n 7849
Contextual Info: USER'S MANUAL µPD75518 4 BIT SINGLE-CHIP MICROCOMPUTER µPD75517 µPD75518 µPD75P518 NEC Corporation 1990 Document No. IEU-1305E O. D. No. IEU-743E Date Published January 1995 P Printed in Japan Cautions on CMOS Devices 1 Countermeasures against static electricity for all MOSs

TQ7641

Contextual Info: S E M I C O N D U C T O R , I N C TQ7641 3V PCS-1900 Power Am plifier 1C Features • 314 single supply • High efficiency • 32 dBm output power • Low harmonics • Power TSSQP-20 plastic package • 50-ohm matched input Product Description The TQ7641 is a high-efficiency power am plifier developed fo r PCS-1900

TRANSISTOR 5101 FG

Abstract: j 13007-2 WM7 SMD transistor marking code MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR TRANSISTOR SMD MARKING CODE s01 smd transistor bq SAA 1025 AHL touch 1015G ELAP cm 76
Contextual Info: NEC USER’S MANUAL J0.PD75518 4 BIT SINGLE-CHIP MICROCOMPUTER HPD75517 X P D 7 5 5 1 8 |iPD75P518 Document No. IEU-1305E (O. D. No. IEU-743E Date Published January 1995 P Printed in Japan F£C Corporation 1990 •I b427SSS 0D^S3EH 174 ■ Cautions on CM OS D evices

uPD750008

Abstract: uPD75008 uPD750104 uPD750106 uPD750108 uPD75P0116 uPD75008 instruction set
Contextual Info: USER'S MANUAL µPD750108 4 BIT SINGLE-CHIP MICROCOMPUTER PRELIMINARY µPD750104 µPD750106 µPD750108 µPD75P0116 Document No. U11330EJ1V0UM00 (1st edition) Date Published July 1996 P Printed in Japan 1996 [MEMO] GENERAL 1 PIN FUNCTIONS 2 FEATURES OF THE ARCHITECTURE AND MEMORY MAP

U1015

Abstract: uPD753108 uPD753204 uPD753208 mPD7225G RBS 2216 Mem 5116
Contextual Info: mPD753208 4-BIT SINGLE-CHIP MICROCONTROLLER PRELIMINARY mPD753204 mPD753206 mPD753208 mPD75P3216 1995 Document No. U10158EJ1V0UM00 (1st edition) Date Published October 1995 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

cmd transistor marking cy

Abstract: CY-360 marking code WM4 U1015 uPD753108 uPD753204 uPD753206 uPD753208 uPD75P3216 code marking s20 TRANSISTOR
Contextual Info: User’s Manual µPD753208 4-bit Single-chip Microcontrollers µPD753204 µPD753206 µPD753208 µPD75P3216 Document No. U10158EJ2V0UM00 2nd edition Date Published December 1997 N Printed in Japan 1995 [MEMO] 2 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

uPD750008

Abstract: uPD75008 uPD750104 uPD750106 uPD750108 uPD75P0116 uPD7520
Contextual Info: USER'S MANUAL µPD750108 4 BIT SINGLE-CHIP MICROCONTROLLER µPD750104 µPD750106 µPD750108 µPD75P0116 Document No. U11330EJ2V0UM00 2nd edition Date Published March 1997 J Printed in Japan 1996 [MEMO] GENERAL 1 PIN FUNCTIONS 2 FEATURES OF THE ARCHITECTURE AND MEMORY MAP

MT 5388 BGA

Abstract: Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511
Contextual Info: IDT Product Selector Guide Accelerated Thinking SM Table of Contents Integrated Processors Flow-Control Management Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13