TRANSISTOR BC 413
Abstract: 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 transistor c 413 bc 330 transistor TRANSISTOR BC 135 TRANSISTOR BC 413 b BC413C BC414C
Contextual Info: *BC413 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , ßQ TRANSISTOR NPN S ILIC IU M PLA N A R E P IT A X IA L sfc Preferred device D is p o s itif recommandé BC 413 and BC 414 are very low noise transis tors intended for input stages in audio frequen cy amplifiers.
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bc413bc414cb-76indi13+10transistor bc 413414 transistortransistor bc 413 npntransistor bc 414transistor c 413bc 330 transistortransistor bc 135transistor bc 413 bbc413cbc414c
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transistor vc 548
Abstract: 547 transistor BC546.547 transistor c 548 transistor NPN 548 transistor C 548 B transistor C 547 TRANSISTOR BC 550 b transistor b 548 transistor c 548 c
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VCEO= 6 5 V • LOW NOISE: BC549, BC550 • Com plem ent to BC556 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage
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bc546/547/548/549/550bc546bc549bc550+13bc556bc547/550bc548/549transistor vc 548547 transistorbc546.547transistor c 548transistor npn 548transistor c 548 btransistor c 547transistor bc 550 btransistor b 548transistor c 548 c
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TRANSISTOR C 557 B
Abstract: BC 558 transistor transistor c 557 transistor B 560 transistor 557 b transistor bc 557 c le B 557 PNP TRANSISTOR transistor 200ma pnp bc transistor c 558 BC559
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC556, V Ce o = - 6 5 • LOW NOISE: 8C 559, BCS60 • Com plem ent to BC546 . BC 550 V ABSOLUTE MAXIMUM RATINGS Ta=25°C C hara c te ristic Sym bol C ollector Base Capacitance
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bc556/557/558/559/560bc5568c559bcs60+14bc546bc557/560bc558/559bc557/56transistor c 557 bbc 558 transistortransistor c 557transistor b 560transistor 557 btransistor bc 557 c leb 557 pnp transistortransistor 200ma pnp bctransistor c 558bc559
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TRANSISTOR BC 413
Abstract: TFK 101 TFK 902 transistor bc 102 TFK 413 BC413 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 TFK 102
Contextual Info: BC 413 - BC 414 Silizium-NPN-Epitaxial -Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharm e Vorstufen Applications: Low noise pre stages Besondere Merkmale: Features: • Rauschmaß < 3 dB • Noise figure < 3 d B • In Gruppen so rtie rt
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transistor bc 413tfk 101tfk 902transistor bc 102+6tfk 413bc413414 transistortransistor bc 413 npntransistor bc 414tfk 102
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TRANSISTOR BC 413
Abstract: BC414C BC413C bc 357 transistor pin details BC413B BC413 bc 357 transistor BC414B BC414 Transistor BC413C
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 413, B, C BC 414, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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bc414c-120rev160701transistor bc 413+8bc414cbc413cbc 357 transistor pin detailsbc413bbc413bc 357 transistorbc414btransistor bc413c
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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3866sbf247 equivalentbrochage des circuits integrestriac gk+6transistor bc 564bc547eti small signal fet cataloguebcw 91 transistorsescosescosem
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TRANSISTOR BC 384
Abstract: bc 357 transistor transistor BC 336 TRANSISTOR BC 413 transistor BC 310 TRANSISTOR BC 321 bc 357 transistor pin TRANSISTOR BC 256 transistor bc 318 BC347
Contextual Info: 6091788 MICRO ELECTRO N I C S f.QRP 05 _ 820 0 0 6 4 4 D E j b O c] 1 7 ñ ñ 0 7 1 2 ^ - / 7 000Gb44 E | Low Level and General Purpose Amplifiers P O LA R IT Y CASE 251 252 253 256 257 P P P P P TO-92F TO-92F TO-92F TO-92F TO-92B 300 300 300 300 300
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o-92fo-92bto-02melf-002+11melf-006transistor bc 384bc 357 transistortransistor bc 336transistor bc 413transistor bc 310transistor bc 321bc 357 transistor pintransistor bc 256transistor bc 318bc347
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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catalogue des transistors bipolaires de puissancebrochage des circuits integresh3c1-07lb 124 transistor equivalente+6transistor a2222equivalent of transistor bc212 bc 214bfw-11 terminalssescosem transistorequivalente transistor bc 141brochage bcw91
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transistor eft 323
Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
Contextual Info: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge
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transistor eft 323eft 323transistor bc-1086001-015+6service-mitteilungenbc149eft323bauelemente ddroa1180transistor bc 187
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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af106apc ups circuit diagram rs 1500apc ups es 500 circuit diagramapc ups 650 circuit diagram+7schematic diagram apc back ups xs 1000taa550apc ups circuit diagramups apc rs 1000 circuit diagramups apc rs 800 circuit diagramapc back es 500 ups circuit diagramcircuit diagram apc ups 700
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transistor BC 310
Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .
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bcw94cb-76bc317ptransistor bc 310+9transistor bc 487transistor bc 321transistor bc 416 b pnpbc 337-25 transistortransistor bc 415transistor bc 318transistor bc 337-25transistor bc 413bc 337-40 transistor
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transistor bc 209 npn
Abstract: transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693
Contextual Info: ¡ SAMSUNG S EMIC ONDUCT OR INC KSD1692 14E | 7^4142 00071,31 4 | NPN SILICON DARLINGTON TRANSISTOR T HIGH DC CURRENT GÀIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C - 3 3 I , ? TO-126 HIGH POWER DISSIPATION : PT = 1.3W T.=25°C ABSOLUTE MAXIMUM RATINGS <Ta=25°C )
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ksd1692o-126pwc10ksd5000+13ic-5v--54b2l-50oim0007b3transistor bc 209 npntransistor bc 207 npntransistor bc 209transistor bc 208bc 301 transistortransistor darlington 800vtransistor bc 207transistor bc 206ic-5v-54b2ksd1693
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MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363 smd code marking SOT223 MINI POWER MOSFET SMD TRANSISTOR MARKING BF transistor 313 smd
Contextual Info: APPLICATIONS DISCRETE SEMICONDUCTORS Jörg Lützner ● Achim Renner Package deal for discretes Progressive miniaturization of electronic modules and streamlined production technologies e.g. with molded interconnection devices call for sustained reduction in
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mosfet transistor smd marking code nhtransistor smd marking code lfmmic sot 343 marking codebc 148 transistor pin configuration+6transistor smd code package sot363smd diode sod-323 marking code 31smd mosfet sot-363smd code marking sot223 mini power mosfetsmd transistor marking bftransistor 313 smd
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SL 100 NPN Transistor base emitter collector
Abstract: KSC5022 KSC5020 KSC5021 KSC5023 vbe 10v, vce 500v NPN Transistor js 206a MC 331 transistor C-03A transistor high voltage
Contextual Info: SAMSUNG SEMICONDUCTOR INC IME KSC5020 D | 7^4142 00Q?S02 b NPN SILICON TRANSISTOR T - 3 3 -/ / HIGH VOLTAGE, HIGH QUALITY HIGH SPPED SWITCHING: t,=0.1fS • W IDE SO A ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage
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ksc5020sl 100 npn transistor base emitter collectorksc5022ksc5021+6ksc5023vbe 10v, vce 500v npn transistorjs 206amc 331 transistorc-03atransistor high voltage
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SiC BJT
Abstract: Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters RF Transistor s-parameter NPN transistor mhz s-parameter bipolar transistor s-parameter RF Bipolar Transistor
Contextual Info: Copyright c [Year] IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Advanced Power Technology's products or services. Internal or personal use of this material is permitted. However, permission to
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sic bjttransistor bc 457bipolar transistor ghz s-parameter4h sic+6rf power bjtsrf transistors with s-parametersrf transistor s-parameternpn transistor mhz s-parameterbipolar transistor s-parameterrf bipolar transistor
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2s301bs9300-c-5982s305bs9300-c-366+162s3072s322cv7396bs9300-c-396cv7647bs9300-c-647tis43equivalent of transistor bc214bf257 texasequivalent of transistor bc212 bc 2142n696 texas instrumentsq2t2222tis70bfr40kd 2060 transistorbf195 equivalent
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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transistor smd 5DW 73
Abstract: sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA
Contextual Info: Qualifications Validated Annually QUALIFIED MANUFACTURERS LIST OF CUSTOM HYBRID MICROCIRCUITS QUALIFIED UNDER MILITARY SPECIFICATION MIL-PRF-38534 CUSTOM HYBRID MICROCIRCUITS QML-38534-29 30-Jun-99 SUPERSEDING QML-38534-28 31-Mar-99 CUSTOM HYBRID MICROCIRCUITS
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mil-prf-38534qml-38534-2930-jun-99qml-38534-28+1231-mar-9916-bittransistor smd 5dw 73sipex 3232bu-61588p3sd-14621dxsd14621sdc 7500natel 09059mpc 1298 v5962-8952211yc95003-01hxa
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isl 6251 schematic
Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.
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q62702-a772q62702-a731q62702-a773ot-23+10isl 6251 schematicsmd transistor a4ssiemens ofw 361smd marking b4h6bs smd transistornpn transistors list according to current, voltagtransistors diodes smd a7ha4s smd transistornpn transistor ss100smd transistor 6bs
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2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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o-92d2907a pnp bipolar transistorsbc 148 transistor datasheettransistor bc 450 pnp+7diode s6 78atransistors bf 517bfg sot89bc 327 sot 23bas20 sot23diode ta 70/04bcp 846
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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b3-b3715b3715-x-x-7600transistor 131-6 bj 946transistor bc 564+8transistor bc 949 datenblatttransistor bc 545marking code ags bsp 2000siemens datenbuchbft99mmic smd amplifier marking code 19stransistor smd marking code bc rudiode smd marking 22-16
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bc237 smd
Abstract: microwave sensor microwave distance sensors ne 556 timer bc237 equivalent SMD microwave RADAR motion sensors microwave motion sensors motion sensor doppler motion sensor doppler effect motion DOPPLER
Contextual Info: APPLICATIONS SENSORS Gerhard Lohninger Microwave sensor SMX-1: Opening doors by invisible hands Microwave sensors have two key advantages over other motion sensors: they are independent of temperature and can make direct use of the Doppler effect. The SMX-1 microwave sensor with its
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bc237 smdmicrowave sensormicrowave distance sensorsne 556 timer+6bc237 equivalent smdmicrowave radar motion sensorsmicrowave motion sensorsmotion sensor dopplermotion sensor doppler effectmotion doppler
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diode S6 78A
Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14
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o-92tlo-92ddiode s6 78atransistor pnp ba rt sot 89+8mmic cea sot36332n45transistor 6bwtransistor bc 545bf1012s6bw sot-23up 6103 s86bw 12 transistor
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d2s transistor
Abstract: KSC5019 ic 74145
Contextual Info: KSC5019 NPN EPITAXIAL SIU CO N TRANSISTOR LOW SATURATION • V<* sat =0.5V (lc=2A, I, > 50mA) _ TO-92 ABSOLUTE MAXIMUM RATINGS (T>=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage
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ksc5019-50mapws10msh44111ili+2d2s transistoric 74145
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