TRANSISTOR BC 2SK Search Results

2SK514

Abstract: d1352 C982 M-0258 MA 7824 T460-8525 FT010 ra022 2sk514 transistor transistor 2sk514
Contextual Info: iM u m y ? > > * * Junction Field Effect Transistor 2SK514 * at H M W W t i L l m • 4.0 ± 0 .1 I 1 .0 * 0 ,2 T a =25 bC) K r - h • k h r - > n n * flE 4 r - > * h £ m m -50 V Vqso -50 V Vpsx * 50 V at Id 20 raA « Ig 10 mA * Pt 250 mW Tj 125 X > ; x a > a #

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2SK2996

Abstract: 2SK2996(Q)
Contextual Info: TOSHIBA 2SK2996 SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS Low Drain-Source ON Resistance : Rd S(ON) = 0.740 (Typ.)

2SK427

Abstract: I00MH to-92 .y1 2sk427 transistor
Contextual Info: Ordering number: EN 1404A _ 2SK427 N-Channel Junction Silicon FET AM Tuner, RF Amp Applications Use • AM tuner RF amp, low-noise amp Features • Large |yfs| • Very low noise figure • Small Cfss Absolute Maximum Ratings/Ta = 25°C Drain to source voltage

2SK686

Abstract: ODDS445 t37h
Contextual Info: SANYO SEMICONDUCTOR 15E D I CORP T-3^-|/ 2SK686 N-Channel M O S Silicon Field-Effect Transistor 2052A <£&m 7 cH7G7ti~ DODS441 High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute H a x l M Ratings at Ta=25°C

BL-5j

Contextual Info: Transistors Interface and switching 30V, 200mA 2SK2731 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •E x te rn a l dimensions (Units: mm) 2.9±0.2

2SK687

Abstract: DDD3710
Contextual Info: SANYO SEMICONDUCTOR CORP ÍEE DI 7cH707ki □□□S44b S T - V M l 2SK687 N -Channel M O S Silicon Field-Effect Transistor 2052A 2464A High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute Maxim» Ratings at Ta=25°C

PA 2027A

Abstract: LT 450 SL 2040 CT microphone czn-15e SANYO SP d 2037 transistor 2SK156
Contextual Info: SANYO SLM IC O N D LKTO R COKF -liedt D I n i i ’ Ui ’b UUUòd4b 2SK156 S ilicon 2037 N-Channel Junction Fíeld-Effect Transistor Capacitor Microphone Impedance Conversion Applications 540F A B S O LU T E M AXIMUM R A T IN G S /T a = 25°C unit Gate drain voltage

2SK778

Abstract: B1181 JIS G3141 DDD3710
Contextual Info: SA N Y O SEMICONDUCTOR IS E D CO RP 2SK778 N -Channel M O S Silicon Field-Effect Transistor 2052A 2562 7 T i 7 G 7 t. □DGSMbS 1 T-Sl-oV Very High Speed Switching Applications Features . Low ON resistance, very high-speed switching Absolute Haxlaua Ratings at Ta=25°C

2052A

Abstract: SILICON TRANSISTOR FS 2025
Contextual Info: SANYO SEM ICONDUCTO R IS E CORP D 2SK778 N -Channel M O S Silicon Field-Effect Transistor 2052A 2562 7 T i 7 G 7 t. □DGSMbS 1 T-Sl-oV Very High Speed Switching Applications Features . Low ON resistance, very high-speed switching Absolute Haxlaua Ratings at Ta=25°C

2SK156

Abstract: VLN 2003a HT 12E APPLICATION sj 2025 sj 2038 TRANSISTOR BC 313
Contextual Info: SANYO Xtm CONPULTOR COKF 2SK156 r - ' x i - x z ' N-Channel Junction Silicon Field-Effect Transistor 2037 Capacitor Microphone Impedance Conversion Applications 540F A B S O L U T E M AXIMUM RA TIN G S/Ta = 2 5°C unit Gate drain voltage vdgo Gate current

b1181

Abstract: JIS B1181 2SK283 TO-220AD MARKING 313B JIS G3141 DDD3710 w19 transistor ss 7941 .2t transistor
Contextual Info: SANYO SEMICONDUCTOR CORP IS E D I 7 cH 7 []7 t, □ 0DS3t.2 7 | “ T - 3 S ' - } 2SK283 # N-Channel Junction Silicon Field-Effect Transistor High Voltage Driver Applications 794E FEA TU RES * Because it is encapsulated in an ultra compact package, compact and low-profile sets can be designed.

2sk2782

Abstract: MMA6
Contextual Info: TOSHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2782 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm a 6 .8 M A X .

TRANSISTOR FS 2025

Abstract: 2SK315 bc 301 transistor marking ADMI DDD3710 u150 IC 1709 CN 0V112
Contextual Info: SANYO SEMICONDUCTOR 2SK315 CORP 15E D I 1 7TT?Q7b 00053^7 b T- 3J~2 ^ I N-Channel Junction Silicon Field-Effect Transistor 2040 FM Tuner Applications 1005B Features Ideal for FM tuners in radios, stereos, etc. . Because it is compactly packaged, sets can be made compact.

JIS B1181

Abstract: d 2037 transistor capacitor 0.22mA TRANSISTOR b1181 FOR TRANSISTOR BC 149 B 2042A 2SK376 DDD3710 B1181
Contextual Info: SANYO SEMICONDUCTOR CORP 2SK376 1BE » 1 I ’ N-Channel Junction Silicon Field-Effect Transistor 2037 1432A i m U l h 0D0S3fl0 I Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

2SK377

Abstract: HO 150-NP-1100
Contextual Info: • ' u i N -C h a n n e l J u n c tio n S ilicon FET 2 02 6 Capacitor Microphone Applications I393A Features Especially suited for use in audio, telephone capacitor microphones. High lyfsj. Excellent voltage characteristic. Absolute Maximum Ratings at Ta=25°C

Contextual Info: Transistors Interface and switching 30V, 200mA 2SK2731 •F e a tu re s • E x t e r n a l d im e n s io n s (U nits: m m ) 1) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) L o w -v o lta g e d riv e (4V). 4) E a sily d e s ig n e d d rive circu its.

2SK595

Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

2SK597

Contextual Info: SANYO SEMICONDUCTOR CORP 3EE D S3 7 cH 7 0 7 b 00GT23fl 4 T-29-25 2026 N-Channel Junction Silicon FET Capacitor Microphone Applications 2216 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

sj 2025

Abstract: 2SK597 00Gt
Contextual Info: SANYO SEMICONDUCTOR CORP 3EE D S3 7 cH 7 0 7 b 00GT23fl 4 T-29-25 2026 N-Channel Junction Silicon FET Capacitor Microphone Applications 2216 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

sj 2025

Abstract: 2SK333 2I k 2026 rifa
Contextual Info: SANYO SEMICONDUCTOR 3SE CORP D T W Q T b OOOßflöfi S T -2 7 -2 -7 Iffl N-Channel Junction Silicon Com posite FET .2 0 2 7 A Differential Amp Applications - Features • Especially suited for use in first stage of differential amp. • High breakdown voltage and wide dynamic range