BC376
Contextual Info: BC376 PHILIPS INTERNATIONAL 5bE D 7110ö2hi ODMSÜIE TIT BIPHIN r-2.^-23 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic T O -92, intended for low-voltage, high-current LF applications. BC 375/B C 376 is the matched complementary pair suitable fo r output stages up to 2 W.
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bc376711005bbc375/bc376150ma |
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BSS125
Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line
Contextual Info: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)
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bss125transistor bc seriesbuz mosfet4013 flipflop+6fredfetbc 4013mos 4011transistor bc 560bipolar bc transistorbaw delay line
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transistor B 560
Abstract: TRANSISTOR BC 136 BC560 TRANSISTOR BC 560 TRANSISTOR BC 135 IC 7414 transistor c-133 2493 transistor transistor Bc 82 ic 7414 cm
Contextual Info: BC 559 * BC 560 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Rauscharme Vorstufen Application: Low noise prestages Besondere Merkmale: Features: • Verlustleistung 500 m W • Power dissipation 500 m W
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transistor b 560transistor bc 136bc560transistor bc 560+6transistor bc 135ic 7414transistor c-1332493 transistortransistor bc 82ic 7414 cm
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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3866sbf247 equivalentbrochage des circuits integrestriac gk+6transistor bc 564bc547eti small signal fet cataloguebcw 91 transistorsescosescosem
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transistor vergleichsliste
Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G
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transistor vergleichslistetransistor vergleichsliste ddrtelefunken transistorenvalvo+6bsw69vergleichsliste ddrvergleichslistetransistor bc-148rft transistorentransistoren ddr
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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catalogue des transistors bipolaires de puissancebrochage des circuits integresh3c1-07lb 124 transistor equivalente+6transistor a2222equivalent of transistor bc212 bc 214bfw-11 terminalssescosem transistorequivalente transistor bc 141brochage bcw91
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AN1792 L6599 application note
Abstract: B15 diode smd l6599 400w T-RES-ER49-400W circuit diagram of smps 400w viper 12a SHORT CIRCUIT PROTECTION FOR L6562 arcotronics R46 275 L6599 application note l6599
Contextual Info: AN2509 Application note Wide range 400W +200 V@1.6 A / +75 V@1 A L6599-based HB LLC resonant converter Introduction This note describes the performances of a 400W reference board, with wide-range mains operation and power-factor-correction (PFC) and presents the results of its bench
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an2509l6599-basedl6563an1792 l6599 application note+9b15 diode smdl6599 400wt-res-er49-400wcircuit diagram of smps 400wviper 12ashort circuit protection for l6562arcotronics r46 275l6599 application notel6599
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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af106apc ups circuit diagram rs 1500apc ups es 500 circuit diagramapc ups 650 circuit diagram+7schematic diagram apc back ups xs 1000taa550apc ups circuit diagramups apc rs 1000 circuit diagramups apc rs 800 circuit diagramapc back es 500 ups circuit diagramcircuit diagram apc ups 700
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TRANSISTOR BC 136
Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available
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t-33-17din125a15a3dintransistor bc 136+9transistor bd 140transistor bd 126bd 140 transistor16bd136transistor bc 138transistor 138transistor bd 136bd 139 transistortransistor bd 711
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SiC BJT
Abstract: Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters RF Transistor s-parameter NPN transistor mhz s-parameter bipolar transistor s-parameter RF Bipolar Transistor
Contextual Info: Copyright c [Year] IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Advanced Power Technology's products or services. Internal or personal use of this material is permitted. However, permission to
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sic bjttransistor bc 457bipolar transistor ghz s-parameter4h sic+6rf power bjtsrf transistors with s-parametersrf transistor s-parameternpn transistor mhz s-parameterbipolar transistor s-parameterrf bipolar transistor
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2s301bs9300-c-5982s305bs9300-c-366+162s3072s322cv7396bs9300-c-396cv7647bs9300-c-647tis43equivalent of transistor bc214bf257 texasequivalent of transistor bc212 bc 2142n696 texas instrumentsq2t2222tis70bfr40kd 2060 transistorbf195 equivalent
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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transistor smd 5DW 73
Abstract: sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA
Contextual Info: Qualifications Validated Annually QUALIFIED MANUFACTURERS LIST OF CUSTOM HYBRID MICROCIRCUITS QUALIFIED UNDER MILITARY SPECIFICATION MIL-PRF-38534 CUSTOM HYBRID MICROCIRCUITS QML-38534-29 30-Jun-99 SUPERSEDING QML-38534-28 31-Mar-99 CUSTOM HYBRID MICROCIRCUITS
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mil-prf-38534qml-38534-2930-jun-99qml-38534-28+1231-mar-9916-bittransistor smd 5dw 73sipex 3232bu-61588p3sd-14621dxsd14621sdc 7500natel 09059mpc 1298 v5962-8952211yc95003-01hxa
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1000HA
Abstract: NE5517 dolby true HD circuit lm13600 application notes NE5517N operational transconductance amplifier LM13600 NS high end amplifier schematics LM13600 NE5517A
Contextual Info: Product specification Philips. Semiconductor# Linear Products N E 5 5 1 7 /5 5 1 7 A Dual operational transconductance amplifier PIN CONFIGURATION DESCRIPTION N, D Packages The NE5517 contains tw o current-controlled transconductance amplifiers, each with a differential Input and push-pull output. The
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ne5517/5517ne55177110flstne5517/5517a+117110fl2b711062b1000hadolby true hd circuitlm13600 application notesne5517noperational transconductance amplifierlm13600 nshigh end amplifier schematicslm13600ne5517a
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BC415 PNP TRANSISTOR
Abstract: bc416 TRANSISTOR BC 136 BC415 TRANSISTOR BC 137 TRANSISTOR BC 416 b pnp TRANSISTOR BC 416 b TRANSISTOR BC 415 transistor bc 138 TRANSISTOR BC 415 b pnp
Contextual Info: BC415, BC416 PNP Silicon Epitaxial Planar Transistors for use in high-quality, low-noise AF and DC amplifiers. Com plem entary types are the NPN transistors BC413 and BC414. These types are subdivided into three groups A, B and C, according to their DC current gain.
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bc415bc416bc413bc414+8bc415 pnp transistortransistor bc 136transistor bc 137transistor bc 416 b pnptransistor bc 416 btransistor bc 415transistor bc 138transistor bc 415 b pnp
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transistors BC 543
Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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ot-23ot-363ot-143transistors bc 543+9183wdiode baw 62bcr191psot23 bcv 27transistor bc 530sot-23 p1diode s6 78ammic amplifier sot-89 p4diode sot 143 s5
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isl 6251 schematic
Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.
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q62702-a772q62702-a731q62702-a773ot-23+10isl 6251 schematicsmd transistor a4ssiemens ofw 361smd marking b4h6bs smd transistornpn transistors list according to current, voltagtransistors diodes smd a7ha4s smd transistornpn transistor ss100smd transistor 6bs
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transistor D613 equivalent
Abstract: TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567
Contextual Info: 123455678 LIN-Slave for relay and DC motor control 9ABCDEAF8 Microcontroller: MLX16x8 RISC CPU o o o 16 bit RISC-CPU Co-processor for fast multiplication and division In-circuit debug and emulation Memories o o o 32 kByte Flash with ECC 2 kByte RAM 384 Byte EEPROM with ECC for customer purpose
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mlx16x8j2602iso/ts16949iso14001+6mlx81150transistor d613 equivalenttransistor d61341e hall sensortransistor marking 9dtransistor bc 567
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2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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o-92d2907a pnp bipolar transistorsbc 148 transistor datasheettransistor bc 450 pnp+7diode s6 78atransistors bf 517bfg sot89bc 327 sot 23bas20 sot23diode ta 70/04bcp 846
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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b3-b3715b3715-x-x-7600transistor 131-6 bj 946transistor bc 564+8transistor bc 949 datenblatttransistor bc 545marking code ags bsp 2000siemens datenbuchbft99mmic smd amplifier marking code 19stransistor smd marking code bc rudiode smd marking 22-16
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S4 78a DIODE schottky
Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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25-rf-bipolar-transistors45-rf-bipolar-transistorsot-23ot-143+10s4 78a diode schottkydiode s6 78abc 148 transistor datasheettransistors bc 543transistor bc 158bc 158 is npn or pnp68w npntransistor bcs6 78abaw 92
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diode S6 78A
Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14
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o-92tlo-92ddiode s6 78atransistor pnp ba rt sot 89+8mmic cea sot36332n45transistor 6bwtransistor bc 545bf1012s6bw sot-23up 6103 s86bw 12 transistor
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TRANSISTOR BC 136
Abstract: TRANSISTOR SOT-23 marking JE
Contextual Info: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain
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jedecto50569-gstransistor bc 136transistor sot-23 marking je |
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2907A PNP bipolar transistors
Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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ot-23ot-1432907a pnp bipolar transistorsdiode s6 78a+8mmic sot 363s1140diode ta 70/042907a pnp bipolar transistors datasheetdiode baw 62transistor bc 158baw 9268w sot
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