transistor BC 308
Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Contextual Info: * BC 307 BC 308 BC 309 MPN SILICON TRANSISTOR, EP ITAXIAL PLANAR r RANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L % Preferred device D isp o sitif recommandé 3C 309 and BC 308 transistors are intended or use in audio frequency preamplifier and iriver stages. BC 309 is intended for low
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bc307cb-76307ast308ast+10transistor bc 308transistor sc 308transistor bc 307bc 106 transistortransistor 307bc 309 b transistortransistor bc 55transistor da 307sc 309transistor cb 308
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transistor bc 144
Abstract: TRANSISTOR
Contextual Info: SIEMENS NPN Silicon AF Transistor • • • • BC 368 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 369 PNP Type Marking Ordering Code BC 368 - C62702-C747 PinCoinfigurat ion 1 2 3 E C Package1)
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c62702-c747fls35fcd12d515023sbgs+3q15051ltransistor bc 144transistor
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q1205
Contextual Info: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)
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c62702-c748150iiine35ld5fle35bq5+1q1205
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BC868
Abstract: transistor marking HB sot-89 BC868-10 BC868-16 BC868-25 IEC134 L7E transistor T10102
Contextual Info: • bbSB'ìBl DD24MÖ7 Ö21 « A P X N AMER PHILIPS/ DIS CRETE b7E ì> BC868 A_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a microminiature plastic envelope intended for low-voltage, high-current l.f. applications. BC868/BC 869 is the matched complementary pair suitable for class-B audio output
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bbs3131d0s44fi7bc868bc868/bc869+9500maot-89transistor marking hb sot-89bc868-10bc868-16bc868-25iec134l7e transistort10102
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transistor bc 577
Abstract: transistor bc 103
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code
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q62702-2372ot-363fle35bdsbc847s+4ehp00365fl235b05transistor bc 577transistor bc 103
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marking Ht SOT-363
Abstract: 3h250 FT12E 3cs transistor
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array >For AF input stages and driver applications 1High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package ^ F I H "•> <>« i- n - i u Ordering Code
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q62702-c2373ot-363marking ht sot-3633h250+2ft12e3cs transistor
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transistor bc 102
Abstract: bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337
Contextual Info: HN / BC 337/338 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As
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bc327bc328103matransistor bc 102+9bc 103 transistortransistor 337transistor bc 337c 337 25transistor 338transistor bc 338bc 2001 transistorbc 170 transistorbc 337
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bc 103 transistor
Abstract: bc 106 transistor transistor BC 549 transistor bc 103 bc 104 npn transistor transistor bc 102 transistor c 548 of bc 547 b transistor bc 546 transistor Bc 580
Contextual Info: HN / BC 546.549 NPN Silicon Expitaxial Planar Transistor These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549
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bc546bc547bc548bc549+13bc556bc559100mabc 103 transistorbc 106 transistortransistor bc 549transistor bc 103bc 104 npn transistortransistor bc 102transistor c 548of bc 547 btransistor bc 546transistor bc 580
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BC369
Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
Contextual Info: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.
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d027s43bc369bc368/bc369transistor bh+1silicon epitaxial planar transistor philips
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transistor d 364-y
Abstract: transistor BU 102 BC868 BC868-10 BC868-16 BC868-25 364Y marking JY BU 103 A transistor
Contextual Info: • bbâB'm GG2MMÔ7 ÖBl H A P X N AMER PHILIPS/DISCRETE b7E D BC868 A_ _ _ _ _ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N tra n sisto r in a m ic ro m in ia tu re plastic envelope intended fo r low-voltage, h ig h-current l.f. applications. BC 868/B C 869 is the m atched com p le m e n tary p a ir suitable fo r class-B a udio o u tp u t
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bc868bc868/bc869transistor d 364-ytransistor bu 102+6bc868-10bc868-16bc868-25364ymarking jybu 103 a transistor
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bc 357 transistor
Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver
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cb-76bc 357 transistortransistor bc 55bc 106 transistor+7transistor bc 102bc 103 transistortransistor c238transistor bc 237transistor bc 239 cbc 330 transistortransistor bc
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bc 303 transistor
Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in
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bc 303 transistorbc 109 transistortransistor bc 109bc 107 transistor+6a 107 transistortransistor bc 107bc 107 npn transistorbc 108 transistorbc107bc109
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transistor BC 157
Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10
Contextual Info: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as
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bc160160/bc140bc161/bc1418c161+10transistor bc 157transistor bc 181bc181transistor 2sc 1586transistor bc seriestransistor "bc 157transistor bc 650 cbc transistor seriessiemens a35bc161-10
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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3866sbf247 equivalentbrochage des circuits integrestriac gk+6transistor bc 564bc547eti small signal fet cataloguebcw 91 transistorsescosescosem
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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catalogue des transistors bipolaires de puissancebrochage des circuits integresh3c1-07lb 124 transistor equivalente+6transistor a2222equivalent of transistor bc212 bc 214bfw-11 terminalssescosem transistorequivalente transistor bc 141brochage bcw91
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TRANSISTOR BC 137
Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
Contextual Info: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case
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23sbg5q62702-c680q60203-x107-aq60203-x107-b+16q60203-x108q60203-x108-aq60203-x108-bq60203-x108-c60203-x109q60203-x109-btransistor bc 137bc107 characteristicbc 108 transistortransistor bc 102transistor bc 109nt 101bc108b 108 bbc 107 transistortransistor bc 107
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transistor eft 323
Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
Contextual Info: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge
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transistor eft 323eft 323transistor bc-1086001-015+6service-mitteilungenbc149eft323bauelemente ddroa1180transistor bc 187
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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af106apc ups circuit diagram rs 1500apc ups es 500 circuit diagramapc ups 650 circuit diagram+7schematic diagram apc back ups xs 1000taa550apc ups circuit diagramups apc rs 1000 circuit diagramups apc rs 800 circuit diagramapc back es 500 ups circuit diagramcircuit diagram apc ups 700
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C 548 B
Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and
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q62702-c687q62702-c687-v3q62702-c687-v1q62702-c687-v2+16q62702-c688q62702-c688-v3q62702-c688-v1q62702-c688-v2q6270200hzc 548 bb549cbc650c 547 btransistor bc650transistor bc 549 equivalenttransistor c 548 bc547btransistor bc 550 ctransistor c 548
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BC 247 b transistor
Abstract: C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b
Contextual Info: - 25C D • Ô235b05 O O O m ^ b □ H S I E 6 - Q PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 ' SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in
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235b05bc556bc556vibc556a+16bc556bbc5571bc557vibc557abc557bbc5581bc 247 b transistorc558btransistor bc 247transistor bc 245bc 558 equivalentbc560bc556b equivalentbc 247transistor - bc 547, cl 100transistor 557 b
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transistor 2sc 548
Abstract: equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 Bc 649 transistor bc 647 BC5481 BC649
Contextual Info: asc D • asBSbos o o o m io T M S IE G NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENÛESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 55 0 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and
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bc5461q62702-c687q62702-c687-v3q62702-c687-v1+15q62702-c687-v2q62702-c688q62702-c688-v3q62702-c688-v1q62702-c688-v2bc5481transistor 2sc 548equivalent transistor bc 649bc548bcbc6602sc 548 bbc 648bc 649transistor bc 647bc649
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2s301bs9300-c-5982s305bs9300-c-366+162s3072s322cv7396bs9300-c-396cv7647bs9300-c-647tis43equivalent of transistor bc214bf257 texasequivalent of transistor bc212 bc 2142n696 texas instrumentsq2t2222tis70bfr40kd 2060 transistorbf195 equivalent
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TRANSISTOR BC 814
Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
Contextual Info: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with
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cfk10569-gstransistor bc 814transistor "bc 258+6transistor bf 257ci 4580marking cfkbc 251 transistortransistor bc 256telefunken u 257
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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