TRANSISTOR B100 Search Results

USE OF TRANSISTOR

Abstract: Marquardt Switches transistor model list
Contextual Info: Transistor Abstraction for the Functional Verification of FPGAs Guy Dupenloup, Thierry Lemeunier, Roland Mayr Altera Corporation 101 Innovation Drive San Jose, CA 95134 1-408-544-8672 {gdupenlo, tlemeuni, rmayr}@altera.com ABSTRACT This paper discusses the use of transistor abstraction to enable the

74als power consumption

Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
Contextual Info: INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54 74) system designers have wanted more speed less power consumption or a combination of the two attributes These requirements have spawned other logic families such as the DM54 74L (low

b1009 transistor

Abstract: B1009 ba656 ba9700-series BA6566
Contextual Info: Regulator ICs Switching regulator for DC-DC converters BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF and BA9700AFV are switching regulators that use a pulse width modulation PWM system. They use a transistor switch to stabilize the output voltage. By the use of the transistor, power loss is decreased, fluctnation efficiency is improved, and the circuit is made more

PF5102 equivalent

Abstract: National "Audio Handbook" LM194 lm114 National AN-222 C1995 LM114/PF5102 equivalent LM118 PF5102
Contextual Info: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool yet have received less and less attention over the last few years This is primarily due to the proliferation of highperformance monolithic circuits which are replacing many

IR2121

Abstract: MOSFET IR2121 Transistor b103 104X111 B-93 MP150 IGBT Designers Manual CURRENT LIMITING LOW SIDE DRIVER
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary n Gate drive supply range from 12 to 18V n Undervoltage lockout n Current detection and limiting loop to limit driven power transistor current

IR2121

Abstract: IR2121 equivalent DOWNLOAD ir2121 B-93 MP150 IGBT Designers Manual MOSFET IR2121
Contextual Info: Data Sheet No. PD-6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary n Gate drive supply range from 12 to 18V n Undervoltage lockout n Current detection and limiting loop to limit driven power transistor current n Error lead indicates fault conditions and programs

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

IN6006

Abstract: JU003
Contextual Info: 2DI100D-050 iooa < 7 — ï ± / ; u : O utline D rawings POWER TRANSISTOR MODULE F e a tu re s • 7 U —jfc-f y ' s W ' i • hFEJ^Bv,' • — KrtJK Including Free Wheeling Diode High DC Current Gain Insulated Type : A pplications "/"f-'s*? HigH Power Switching

Transistor 2sc1915

Abstract: 2SC1951 2SC1586 2SC1915 2SC1762 2SC1811 2SC1584 2SC1940 Tbb 38 138B
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

PCB Rogers RO4003

Contextual Info: 17.0-27.0 GHz GaAs MMIC Surface Mount Buffer Amplifier B1001P1 May 2002 - Rev 01-May-02 Features Packaged Chip Device y Surface Mount Leadless Package Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 19.0 dB Small Signal Gain 3.5 dB Noise Figure

XB1001

Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

B1000

Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

B1001

Abstract: XB1001 XP1000 XU1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

B1000

Abstract: Mimix xb1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

B1007-QT

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT June 2007 - Rev 06-Jun-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% RF, DC and Output Power Testing

B1008-QT

Abstract: XB1008-QT
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

B1002

Abstract: 84-1LMI XB1002 OC 140 germanium transistor b1002 100
Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 July 2001 - Rev 7/27/01 Features 36.0-43.0 GHz Frequency Range 25.0 dB Typical Small Signal Gain 4.0 dB Typical Noise Figure +14 dBm Typical Compression Point Operates at +3.0 to +5.5 VDC 2.90 mm X 1.50 mm Die Size

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT October 2009 - Rev 10-Oct-09 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

B1002

Abstract: XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100
Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 June 2002 - Rev 26-Jun-02 Features Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 25.0 dB Small Signal Gain 4.0 dB Noise Figure +14 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

XB1008-QT-0G0T

Abstract: B1008-QT XB1008-QT XB1008-QT-0G00 XB1008-QT-EV1
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT August 2008 - Rev 17-Aug-08 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

XB1007-QT

Abstract: B1007 XB1007-QT-0G0T XB1007-QT-EV1 B1007-QT XB1007-QT-0G00 13-Mar-10
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT March 2010 - Rev 13-Mar-10 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +19.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

R300 diodes

Abstract: b1002 100 XP1001 B1002 XB1002 XU1001
Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .