B1007 Search Results

B1007-QT

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT June 2007 - Rev 06-Jun-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% RF, DC and Output Power Testing

B1007

Abstract: DM6030HK TS3332LD XB1007-BD XB1007-BD-000V XB1007-BD-EV1
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier B1007-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

XB1007-QT

Abstract: B1007 XB1007-QT-0G0T XB1007-QT-EV1 B1007-QT XB1007-QT-0G00 13-Mar-10
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT March 2010 - Rev 13-Mar-10 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +19.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

B1007-QT

Abstract: B1007 XB1007-QT
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT September 2007 - Rev 15-Sep-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

Buffer Amplifier Ghz

Abstract: B1007 bd 25 701 BD 329 DM6030HK TS3332LD XB1007-BD XB1007-BD-000V XB1007-BD-EV1
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier B1007-BD September 2007 - Rev 17-Sep-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT October 2009 - Rev 10-Oct-09 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier B1007-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

B1007

Abstract: DM6030HK TS3332LD XB1007-BD XB1007-BD-000V XB1007-BD-EV1
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier B1007-BD October 2009 - Rev 10-Oct-09 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

LED Panel

Contextual Info: LED Panel Displays SIE D • B1007Tfi SHARP CORP LT9315ED DD07PflS 3hB « S R P J Dichromatic LED Panel Displays LT9315ED ■ Model No. LT9315ED Yellow-green Red GaP GaAsP/GaP ■ Features 1. Radiation size 17.0x45.0m m 2. Thin case mold type 3. Radiation color: Yellow-greea red and orange mixed color

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier B1007-BD October 2008 - Rev 03-Oct-08 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

b978

Abstract: B1056 b965 B834 b1017 BX4053 B1042 b1013 B973 B2086
Contextual Info: BROADBAND ACCESS: xDSL & HPN Pulse develops new products for emerging technologies that enable twisted pairs of copper and coaxial cable to deliver services to homes and businesses. These new technologies include all variations of digital subscriber lines, HFC and Home Phoneline Networks and cable modems.

Contextual Info: E523.50 72V 3x HALF-BRIDGE DRIVER WITH INTEGRATED POWER SUPPLIES ADVANCE PRODUCT INFORMATION - DEC 18, 2012 Features General Description ÿ Supply voltage range from 12V to 72V, operational down to 7V ÿ DC/DC converter for 11V/100mA ÿ 3.3V/20mA supply for micro-controller,

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

Contextual Info: E520.13 HS CAN TRANSCEIVER FOR PARTIAL NETWORKING PRODUCTION DATA - APR 19, 2013 Features General Description ÿ HS-CAN transceiver Compatible to ISO 11898-2, ISO 11898-5 and ISO 11898-6 ÿ Four wake-up sources - Local wake-up - Remote wake-up pattern ISO 11898-5

Contextual Info: B1000RW Series Compact 1 x 2 Inch 10W Wide Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

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B1000RW

Abstract: B1004RW
Contextual Info: B1000RW Series Compact 1 x 2 Inch 10W Wide Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

E981.12

Abstract: HIGHWAY 09a ic HIGHWAY 09a 16 PIN DIAGRAM
Contextual Info: E981.12 DUAL IO-LINK MASTER TRANSCEIVER WITH UARTs PRODUCTION DATA - NOV 27, 2013 Features General Description ÿÿ 2-port IO-Link Master ÿÿ Integrated UART-Interface for each port ÿÿ Output drivers with typical 1 Ω ÿÿ Supporting external PMOS switches for

PIR controller ic

Contextual Info: E931.98 PIR CONTROLLER IC FOR LOAD SWITCH PRELIMINARY INFORMATION - NOV 15, 2013 Features General Description ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ ÿÿ The E931.98 integrated circuit combines all required functions for a single chip Passive Infra-Red PIR motion sensor. Motion detection is signaled through the

TRANSISTOR si 6822

Abstract: QSOP-44 elmos 100 ELMOS Semiconductor
Contextual Info: 3 * Half Bridge Controller for System Optimization E523.01B, 02B, 11B, 12B ADVANCE PRODUCT INFORMATION – Mar. 20, 2013 Features • • • • • • • • • • • • • • Applications Dead-time generation dynamical change via SPI IC supply voltage range 7 to 28V (peak 42V)

B1007RW

Contextual Info: B1000RW Series Compact 1 x 2 Inch 10W Wide Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input

Contextual Info: E521.02/03/04 CAN/LIN SBC FAMILY WITH DC/DC BUCK CONVERTER PRELIMINARY INFORMATION - FEB 28, 2013 Features General Description ÿ High efficiency 5V DC/DC buck converter ÿ Wakeable HS-CAN transceiver ISO11898-2 and -5 ÿ Up to four LIN transceiver compliant with LIN 2.1,

B4404

Abstract: BS-2028 BS 5419 B1329 B589 B938 b2498 B1276 B549 BS-2021
Contextual Info: BURNDYWeld BCC-1 TYPE MOLDS Horizontal End to End BCC-1 Type Molds are used for horizontal end to end cable connections. Size range is #6 through 1000 MCM solid or concentric stranded copper conductors. Contact BURNDY Products for information on molds for

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,