TRANSISTOR B 722 Search Results

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

Contextual Info: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

BSX51

Abstract: Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682
Contextual Info: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR BSX 52; a ; B TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L Compì, of BSW 21, A and BSW 22, A • LF amplification A m plification BF BSX 51, 52 BSX 51 A, 52 A BSX 51 B, 52 B 25 V - Low current switching Commutation faible courant

transistor NEC D 882 p

Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP

Contextual Info: Philips Semiconductors tb53^31 0031b73 3=n APX Product specification NPN 4 GHz wideband transistor — — BFQ136 N AUER PHILIPS/DISCRETE b^E ]> PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. Ail leads are isolated

BFG33

Abstract: zo 107 NA P 611 RJ50 UCD123 npn transistor dc 558 RF NPN POWER TRANSISTOR C 10-12 GHZ
Contextual Info: Philips Semiconductors ^ 7110 82 b D0 b 8 7 75 611 M P H IN NPN 12 GHz wideband transistor FEATURES Product specification BFG33; BFG33/X PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION

2SC1815

Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
Contextual Info: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

PL 431 transistor

Abstract: BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R
Contextual Info: PHILIPS INTERNATIONAL 711DÖSb 0Db3SPD 5 TB I IPHIN t>5E D BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO -39 metal envelope with the collector connected to the

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

39N20

Abstract: BD723
Contextual Info: BD719 BD721 BD723 BD725 P H I L IP S I N T E R N A T I O N A L SbE D I 7 1 1 0 0 2 b 0 0 4 2 1 *^ ObS • PHIN 7 - 3 3 - tl SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended for use in audio output and general purpose

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2 S C 5 2 8 8 is ideal for the d rive r stag e am p lifie r in 1.9 G H z-b an d digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G

BLW40

Abstract: MCD205 TLO 721
Contextual Info: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification

Contextual Info: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W

Contextual Info: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures

204p Transistor

Abstract: 2SB893 1023C 10231
Contextual Info: Ordering number: EN 1023C No.l023C i 2SB893 PNP Epitaxial Planar Silicon Transistor SANYO. Large-Current Driving Applications Applications • Power supplies,relay drivers,lamp drivers,strobes Features • Low saturation voltage:V c e sat =_ 0 •45V(I q = - 1 .5A,I b = - 0 .15A)

973-120

Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST

NE856

Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e

Contextual Info: PowerMOS transistor_ _ N AflER PHILIPS/DISCRETE DhE D B U Z 11A _ t.tsa'm D o m m s • T-39-11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

LB 122 transistor To-92

Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)

bux21

Abstract: emetteur bux THOMSON P6021 bux 722 JSE10 amplificateur puissance
Contextual Info: *B U X 21 NPN S IL IC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA TR A N S IS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^P re fe rre d device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt couran t

vp 3082

Abstract: CA3081 CA3081 HARRIS HARRIS 3081 CA3082 harris 723
Contextual Info: HARRIS SEfllCOND SECTOR MOE D Ei 4302271 00322=12 b I T - '4 3 -Z 5 fj C il3 0 S 1 CA3082 HARRIS General-Purpose High-Current N-P-N Transistor Arrays August 1991 Features Description • CA3081 - C om m on-Em itter Array CA3081 and CA3082 consist of seven high-current (to.

transistor 135b

Contextual Info: I I N AMER P H I L I P S / D I S C R E T E ObE D bbS3131 D01S171 3 • RV3135B5X P U L S E D P O W E R T R A N S IS T O R F O R S -B A N D R A D A R N-P-N transistor for use in common-base pulsed power amplifiers for S-band radar 3,1 to 3,5 GHz . Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich