TRANSISTOR B 1185 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

E2p 96 transistor

Abstract: BFS17 BFS17A MSB003
Contextual Info: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.

transistor B 1184

Abstract: 2SD1762 b 1185
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) ^External dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic / I b = 2A/0.2A) 2) Com plem ents the 2S B 1184/2S B 1243/2S B 1185. • S tru c tu re Epitaxial planar type

transistor B 1184

Abstract: BFW30 transistor b 1185 philips BFW30
Contextual Info: Product specification Philips Semiconductors NPN 2 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L DESCRIPTION * 7 ^ 3 /"S SbE D • BFW30 '? 711Gfl2b O O M b O E b 172 « P H I N PINNING NPN transistor in a TO-72 metal envelope, with Insulated electrodes

cq 636 g transistor

Contextual Info: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.

transistor B502

Abstract: 2SD1760 2SB11
Contextual Info: Transistors Power Transistor 50V, 3A 2 S 1 7 6 0 / 2 S D D 1 8 6 4 / 2 S •F e a tu re s 1) 1 7 6 2 D •E x te rn a l dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0 .5 V (Ic / I b (Typ.) = 2A/0.2A) 2) Complements the 2SB11 8 4 /2SB 1243/2SB 1185. 2SD1760

433MHZ amplifier 1w

Abstract: IS-54 MAX2601 MAX2601ESA MAX2602 MAX2602ESA IM325
Contextual Info: 19-1185; Rev 2; 5/97 KIT ATION EVALU E L B AVAILA 3.6V, 1W RF Power Transistors for 900MHz Applications _Applications _Features ♦ Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries ♦ DC-to-Microwave Operating Range

433MHZ amplifier 1w

Abstract: rfc 433mhz circuit RF POWER TRANSISTOR IS-54 MAX2601 MAX2601ESA MAX2602 MAX2602ESA RF transistors with s-parameters
Contextual Info: 19-1185; Rev 3; 9/08 KIT ATION EVALU LE B A IL A AV 3.6V, 1W RF Power Transistors for 900MHz Applications The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion

Contextual Info: 19-1185; Rev 2 ; 5/97 3. 6V, 1 W R F P o w e r T r a n s i s t o r s for 900M H z A p p lic a tio n s The MAX2601 is a high-perform ance silicon bipolar RF p o w e r tra n s is to r. T he M A X 2 6 0 2 in c lu d e s a h ig h perform ance silicon bipolar RF power transistor, and a

433MHZ amplifier 1w

Abstract: transistor a 2601
Contextual Info: 19-1185; Rev 2; 5/97 A l i l X I V M 3.6V, 1W RF P o w er Transistors fo r 900M H z A p p licatio n s The MAX2601 is a high-performance silicon bipolar RF po w e r tra n s is to r. The M AX2602 in c lu d e s a h ig h performance silicon bipolar RF power transistor, and a

S11850-1106

Abstract: S11851-1106 TD-40 H2048
Contextual Info: CCD image sensors S11850-1106 S11851-1106 Improved etaloning characteristics, Constant element temperature control The S11850/11851-1106 are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a low noise type S11850-1106 and high-speed type (S11851-1106) are available with improved etaloning characteristics. The S11850/11851-1106 offer nearly flat spectral response characteristics with high quantum efficiency from the

Contextual Info: CCD image sensors S11850-1106 S11851-1106 Improved etaloning characteristics, Constant element temperature control The S11850/11851-1106 are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a low noise type S11850-1106 and high-speed type (S11851-1106) are available with improved etaloning characteristics. The S11850/11851-1106 offer nearly flat spectral response characteristics with high quantum efficiency from the

Contextual Info: CCD image sensors S11850-1106 S11851-1106 Improved etaloning characteristics, Constant element temperature control The S11850/11851-1106 are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a low noise type S11850-1106 and high-speed type (S11851-1106) are available with improved etaloning characteristics. The S11850/11851-1106 offer nearly flat spectral response characteristics with high quantum efficiency from the

transistor b 1185

Abstract: transistor B 1184 SIPC36AN10 SIPC25AN20 SIPC36AN05
Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 |im Die topology Page 0.018 SIPC36AN05 500 x 2 PH 1185 ^ D S m a x ) ^ D S |o n )m a x V Q 50 100 0.045 SIPC36AN10 500 PH 1185 200 0.120

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.

PCF7931AS

Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Contextual Info: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

shockley diode

Abstract: ccd sensor star tracker shockley diode application diode shockley sun tracking sensors photodiodes shockley diode datasheet Laser power supply abstract Alcatel Microelectronics image sensor star tracker shockley
Contextual Info: Total Dose Effects on CMOS Active Pixel Sensors J. Bogaerts, B. Dierickx Imec, Kapeldreef 75, 3001 Leuven, Belgium ABSTRACT Co60 irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors APS that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

E2p 93 transistor

Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
Contextual Info: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF

transistor B 1184

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

tda8362b

Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

Mosfet FTR 03-E

Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
Contextual Info: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP