TRANSISTOR B 1133 Search Results

Philips FA 291

Abstract: ADB 646 BFT24 8891 702 P TRANSISTOR C 547 transistor
Contextual Info: b b i a i B l 0Q3BDÛ7 E l l M A p x ^roductspecjflcati^ Philips Semiconductors ^ NPN 2 GHz wideband transistor BFT24 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in

34D SERIES CAPACITOR

Abstract: BLY92 BLY92C Philips MBB .J275
Contextual Info: 711065b Philips Semiconductors PHILIPS INT ERN AT ION AL D0 b 3 b 3 7 5 7 fl P H IN Product specification b5E » VHF power transistor BLY92C/01 DESCRIPTION PIN CONFIGURATION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

transistor tt 2222

Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
Contextual Info: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

c 879 transistor

Abstract: BFT24 t 326 Transistor 702 P TRANSISTOR
Contextual Info: Product specification Philips Sem iconductors Ê= NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL 5LE • D BFT24 B FT24 5 7110fl5b O G M S ^ b TMT « P H I N PINNING DESCRIPTION NPN transistor in a plastic SO T37 envelope. DESCRIPTION PIN 1 base It is prim arily intended for use in RF

Contextual Info: bb53T31 D05T740 OTT Philips Semiconductors APX ^roduc^pecificatlon VHF power transistor BLY92C/01 " " " " — • N A f1 E R p H IL IP S /]> IS C R E T E p PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

RF POWER TRANSISTOR NPN vhf

Abstract: BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf
Contextual Info: P hilips Sem iconductors J’b53T31 0 0 5 Iì 7 4 Q GTT • A P X ^ductspecificatlon BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE bTE D PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

philips 4859

Contextual Info: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency

transistor bt 808

Abstract: d 5072 transistor bt 7377 2521a S51-P TRANSISTOR BD 689 transistor Bf 908 SOT23 752 philips 4859 Transistor MJE 5331
Contextual Info: • bbS3131 00B5211 D15 H A P X Philips Semiconductors N AMER Product specification PHILIPS/DISCRETE b ?E D NPN 9 GHz wideband transistor FEATURES BFR505 e PINNING • High power gain PIN • Low noise figure 2 DESCRIPTION 1 Code: N30 • High transition frequency

yg 2025

Abstract: transistor bc 930 2SA929 2SA930 2SC1570
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D • TTTTOTb OOOflöaO 4 B T -2 7 - / S PNP Epitaxial Planar Silicon Transistor 2003A Very Low-Noise Amp Applications The 2SA929, 930 are transistors for very low noise AF amp. They are especially suited for use in the first stage of equalizer amp. in high-grade stereo sets.

J196

Abstract: L0836 40t60 2sj196 DF RV transistor 2SK1482
Contextual Info: Mos M O S Field Effect Transistor 2 P 2SJ196 l i P f t ? ' / « izx v -f- > / * MOS FET Ü t &tznb, , y ^ / 1 9 6 9w m m m i f t t » < , x 4 y f- > 'j J MOS F E T MOS FET Z", 5 V'tiJJtiU C ò S &i # a r v* 5.2 MAX -f H jj S T " ì ~ o Œ i t o 5v i c fr b m m m T é t t o

S-1133B50-U5T1G

Contextual Info: Rev.1.0_00 HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR S-1133 Series The S-1133 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption 300 mA output current developed

Contextual Info: Rev.2.0_00 HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR S-1133 Series The S-1133 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption 300 mA output current developed based on CMOS technology.

Contextual Info: Rev.2.0_01 HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR S-1133 Series The S-1133 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption 300 mA output current developed based on CMOS technology.

S-1133B00-U5T1G

Abstract: S-1133B12-I8T1G diode 1133 high voltage regulator S-1133 S-1133B12-U5T1G S-1133B13-U5T1G S-1133B50-U5T1G
Contextual Info: Rev.2.0_02 HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR S-1133 Series The S-1133 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption 300 mA output current developed based on CMOS technology.

s-1133b33-u5t1g

Abstract: S-1133B30 S-1133 S-1133B00-U5T1G S-1133B12-U5T1G S-1133B13-U5T1G S-1133B14-I8T1G
Contextual Info: Rev.2.1_00 HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR S-1133 Series The S-1133 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption 300 mA output current developed based on CMOS technology.

S-1133B30

Contextual Info: S-1133 Series www.sii-ic.com HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_00 Seiko Instruments Inc., 2006-2010 The S-1133 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current

Contextual Info: S-1133 Series www.sii-ic.com HIGH RIPPLE-REJECTION AND LOW DROPOUT MIDDLE-OUTPUT CURRENT CMOS VOLTAGE REGULATOR Rev.3.0_00 Seiko Instruments Inc., 2006-2010 The S-1133 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current

SD1133

Contextual Info: _S G S -T H O M S O N DSC D | Q O Q a ib t . r a S O L ID ST A T E M IC R O W A V E SD 1133 1 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 10 W, 12.5 V VH F PO W ER T R A N S IS T O R DESCRIPTION The SD1133 is an epitaxial silicon NPN-planar transistor designed

schematic diagram inverter air conditioner

Abstract: 230v to 6v step down transformer 2.5 kva inverter diagrams schematic diagram for inverter air conditioner dynamic braking unit schematic diagram schematic diagram motor control wye delta schematic diagram air conditioner control circuit dc motor control using a push button switch capacitor start capacitor run 1 HP SINGLE PHASE push switch 6 leg transistor
Contextual Info: BULLETIN INSTRUCTION MANUAL 11330 1-5 HP Adjustable Frequency Motor Drives 1.0 GENERAL 1.1.0 DESCRIPTION — The Allen-Bradley Bulletin 1330 state-ofthe-art Adjustable Frequency Motor Drives provide smooth speed control from Oto base frequency. Increased motor speed

2SC5081

Abstract: 2SC5081ZD-TL-E RENESAS marking code package
Contextual Info: 2SC5081 Silicon NPN Epitaxial REJ03G0743-0300 Previous ADE-208-1133A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

transistor 1201 1203 1205

Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
Contextual Info: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).

Contextual Info: bbSBTBl 003EQA7 Ell Philips Semiconductors Product specification APX BFT24 NPN 2 GHz w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in