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    TRANSISTOR A83 Search Results

    TRANSISTOR A83 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR A83 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52 PDF

    Contextual Info: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCContigui ation 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E


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    q68000-a8320ot-23ae35bd5d1ee571+1235bd5 PDF

    6427 darlington transistor

    Abstract: Q68000-A8320
    Contextual Info: NPN Silicon Darlington Transistor SMBT 6427 For general amplifier applications ● High collector current ● High current gain ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E C Maximum Ratings


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    q68000-a8320ot-236427 darlington transistor PDF

    Contextual Info: SIEMENS SMBT 5087 PNP Silicon Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz Type Marking Ordering Code Pin Configuration SMBT 5087 s2Q Q68000-A8319


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    q68000-a8319ot-23p00792jan-22-1999+3120hzp0079310khz PDF

    6427 darlington transistor

    Contextual Info: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCtanfigu ration 1 2 3 Package1) S M B T 6427 s1V Q68000-A8320 B SOT-23


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    q68000-a8320ot-236427 darlington transistor PDF

    3906

    Abstract: marking 2A transistor 3906 transistor marking code 7C
    Contextual Info: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


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    q68000-a8397ot-893906marking 2a+2transistor 3906transistor marking code 7c PDF

    3906

    Abstract: 3906 PNP pnp 3906 transistor 3906 transistor pnp 3906 semiconductor 3906 transistor 3906 data sheet transistor c 3906 2A 3906
    Contextual Info: PNP Silicon Switching Transistor SXT 3906 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


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    q68000-a8397ot-8939063906 pnp+7pnp 3906transistor 3906transistor pnp 3906semiconductor 3906transistor 3906 data sheettransistor c 39062a 3906 PDF

    Contextual Info: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings


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    smbt4124q68000-a8316ot-23fle35bq5+4g12255bfie35bosd1ee557235b05 PDF

    4124

    Abstract: k 4124
    Contextual Info: NPN Silicon Switching Transistor SMBT 4124 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings


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    q68000-a8316ot-234124k 4124 PDF

    3904

    Abstract: Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn
    Contextual Info: NPN Silicon Switching Transistor SXT 3904 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings


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    q68000-a8396ot-893904transistor 3904+5tr 39043904 npn3904 transistortransistor 3904 npn datasheet3904 transistor npn PDF

    BT4124

    Contextual Info: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SM BT4124 sZ C Q68000-A8316 B SOT-23 E C Maximum Ratings


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    smbt4124bt4124q68000-a8316ot-23+1ehp0w37 PDF

    Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings


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    q68000-a8396ot-895235bq5g122b23+2fl53sb05e35li05 PDF

    MARKING 7A SOT89

    Abstract: SXT2907 SXT2907A T2907A
    Contextual Info: SIEMENS PNP Silicon Switching Transistor SXT 2907 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings


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    q68000-a8300ot-89ehp00899marking 7a sot89+3sxt2907sxt2907at2907a PDF

    Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinC^onfigu ration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings


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    q68000-a8396ot-89sxt3904 PDF

    2907 TRANSISTOR PNP

    Abstract: transistor 2907 Q68000-A8300 MARKING 7C
    Contextual Info: SIEMENS PNP Silicon Switching Transistor • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage SXT 2907 A Type Marking Ordering Code tape and reel PinC Contigui ation 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E


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    q68000-a8300ot-89----vbe-20vfl53sbds+523sldsq155blfl2907 transistor pnptransistor 2907marking 7c PDF

    EHP00

    Abstract: marking 2P
    Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings


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    q68000-a8330ot-89ehp00marking 2p PDF

    Contextual Info: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin ( tonfigu ration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


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    q68000-a8397ot-890535bq501ebb3d+4ehp00916235bd5d122b3123sld5 PDF

    npn 2222 transistor

    Abstract: 2222 NPN Transistor 2222 npn 2222 Q68000-A8330
    Contextual Info: NPN Silicon Switching Transistor SXT 2222 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings


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    q68000-a8330ot-89npn 2222 transistor2222 npn+2transistor 2222npn 2222 PDF

    JS301

    Abstract: transistor 2222a sot 89 Q68000-A8330 2222A PMDC transistor marking code 7C transistor 2222a SXT2222A
    Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel P in t tonfigu ation 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E


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    vps05162q68000-a8330ot-8953sbgs+9ehp00890be35ljs301transistor 2222a sot 892222apmdctransistor marking code 7ctransistor 2222asxt2222a PDF

    transistor f613

    Abstract: transistor bc 567
    Contextual Info: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.


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    ao4604ao4604l-ao4604l16789aba2cde9afdc+2transistor f613transistor bc 567 PDF

    SGA-8343

    Abstract: sga8343 transistor d 1933
    Contextual Info: Preliminary Preliminary Product Description SirenzaMicrodevices’ SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process. The SGA-8343 is optimized


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    sga-8343eds-101845sga8343transistor d 1933 PDF

    SGA-8343

    Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process. The SGA-8343 is optimized


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    sga-8343gh049eds-101845 PDF

    C2021M

    Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
    Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)


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    2sc2021ljne2sb8212sa937aln\2sc2021ln+162sb12762021m2sa937am2sb7372sd7862sa1137c2021mb1568mosfet ftr 032sc1b152sa1904mosfet ftr 03-e2sc2021e2sc1740 transistor2sk22952s0240 PDF

    Contextual Info: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS


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    7c518129a-lvtc518129a-lv-12lvtc518129afwl-80lv+4tc518129afwl-10lvtc518129afwl-12lvtc518129apl/afl/afwl-10lv PDF