TRANSISTOR A83 Search Results
TRANSISTOR A83 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR A83 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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2sb504kpl 30092sb502bly34+6 | |
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Contextual Info: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCContigui ation 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E |
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q68000-a8320ot-23ae35bd5d1ee571+1 | |
6427 darlington transistor
Abstract: Q68000-A8320
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q68000-a8320ot-236427 darlington transistor | |
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Contextual Info: SIEMENS SMBT 5087 PNP Silicon Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz Type Marking Ordering Code Pin Configuration SMBT 5087 s2Q Q68000-A8319 |
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q68000-a8319ot-23p00792jan-22-1999+3 | |
6427 darlington transistorContextual Info: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCtanfigu ration 1 2 3 Package1) S M B T 6427 s1V Q68000-A8320 B SOT-23 |
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q68000-a8320ot-236427 darlington transistor | |
3906
Abstract: marking 2A transistor 3906 transistor marking code 7C
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q68000-a8397ot-893906marking 2a+2 | |
3906
Abstract: 3906 PNP pnp 3906 transistor 3906 transistor pnp 3906 semiconductor 3906 transistor 3906 data sheet transistor c 3906 2A 3906
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q68000-a8397ot-8939063906 pnp+7 | |
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Contextual Info: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings |
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smbt4124q68000-a8316ot-23fle35bq5+4 | |
4124
Abstract: k 4124
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q68000-a8316ot-234124k 4124 | |
3904
Abstract: Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn
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q68000-a8396ot-893904transistor 3904+5 | |
BT4124Contextual Info: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SM BT4124 sZ C Q68000-A8316 B SOT-23 E C Maximum Ratings |
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smbt4124bt4124q68000-a8316ot-23+1 | |
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Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings |
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q68000-a8396ot-895235bq5g122b23+2 | |
MARKING 7A SOT89
Abstract: SXT2907 SXT2907A T2907A
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q68000-a8300ot-89ehp00899marking 7a sot89+3 | |
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Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinC^onfigu ration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings |
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2907 TRANSISTOR PNP
Abstract: transistor 2907 Q68000-A8300 MARKING 7C
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q68000-a8300ot-89----vbe-20vfl53sbds+5 | |
EHP00
Abstract: marking 2P
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q68000-a8330ot-89ehp00marking 2p | |
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Contextual Info: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin ( tonfigu ration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings |
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q68000-a8397ot-890535bq501ebb3d+4 | |
npn 2222 transistor
Abstract: 2222 NPN Transistor 2222 npn 2222 Q68000-A8330
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q68000-a8330ot-89npn 2222 transistor2222 npn+2 | |
JS301
Abstract: transistor 2222a sot 89 Q68000-A8330 2222A PMDC transistor marking code 7C transistor 2222a SXT2222A
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vps05162q68000-a8330ot-8953sbgs+9 | |
transistor f613
Abstract: transistor bc 567
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ao4604ao4604l-ao4604l16789aba2cde9afdc+2 | |
SGA-8343
Abstract: sga8343 transistor d 1933
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sga-8343eds-101845sga8343transistor d 1933 | |
SGA-8343Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process. The SGA-8343 is optimized |
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sga-8343gh049eds-101845 | |
C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
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2sc2021ljne2sb8212sa937aln\2sc2021ln+16 | |
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Contextual Info: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS |
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7c518129a-lvtc518129a-lv-12lvtc518129afwl-80lv+4 | |