4124 Search Results

Contextual Info: Alle Reriile vorbehalten/ 2 A ll rights reserved 3 5 U U, 6 6 U 10/250/f.kV 3 tJR 600V @ O vl >PC-GF20< \ \ A ll O iie n sio n s in • lechn. [h a ra c le r. l ic h l lo le r ie r le Masse/ free site telermes O rig in a l Size OIN A A Dal. D e ta il. 412425

din 41240

Abstract: A734127 A735066 A734102 A735025 A734130 alsic A734111 A734109 A735026
Contextual Info: ALSIC HV 160 . 500 V 8 000 h / 105°C 4,7 . 2200 µF ∅ 10 . 35.5 mm Spécifications applicables - 55°C / + 105°C / 56 jours/days L.L. Specifications DIN 41240 - Classe d'utilisation - 55 + 105°C CECC 30 300 Longue durée CEI 60 384-4 Longue durée

4124

Abstract: k 4124
Contextual Info: NPN Silicon Switching Transistor SMBT 4124 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings

47-2001

Abstract: ANG-S21 TGF4124-EPU
Contextual Info:  4124 4124-EPU • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm 4124-EPU RF Performance at F = 2.3 GHz

Contextual Info: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123

Contextual Info: R A D I A LL TECHNICAL DATA SHEET Microwave components 18GHz OPTIONS : SMA INDICATOR N/O R 5 7 3 412480 S.P.4T. Page 1/ 2 SWITCH /BCD DECODER /SUPP.DIODES R F CHARACTERISTICS | IN U M d th Ul- 4 0 - 1 8 GHz 50 Ohms WAT d FREQUENCY RANGE IMPEDANCE <=| 3 |

Contextual Info: Operating and Service Manual Agilent 346A/B/C Noise Source Including Options 001, 002, and 004 Serial Numbers Instruments with serial prefixes 4124A and above are supplied with the noise source ENR data preloaded on diskette -see Chapters 3 & 4. Manufacturing Part Number: 00346-90148

CPU Zilog

Contextual Info: <5 '0'4#.274215' +06')4#6'& /+%41241%'5514 24'.+/+0#4; 241&7%6 52'%+ +%#6+10 25</2 <K.1) 9IRF8WC89 *958QU5RT9RS  ' *5GCFTIH #V9HU9 %5GP69FF %#  69F9PBIH9  (5X  +HT9RH9T BTTPWWW<C.1)7IG 1999 by ZiLOG, Inc. All rights reserved. Information in this publication concerning the devices, applications, or technology described is intended to suggest possible uses and may be superseded. ZiLOG, INC.

ZENER 51N

Abstract: CS4124N16
Contextual Info: CS-4124 CS-4124 High Side PWM FET Controller Features D escription T he CS-4124 is a m o n o lith ic in te ­ g ra te d circ u it d e sig n e d p rim a rily to co n tro l th e ro to r sp e e d of p e r m a ­ n e n t m a g n e t, d irec t c u rre n t DC

2N4123

Abstract: 2N4124 2N41 2n4123 transistor 2N3904 Tj150 TRANSISTOR 2N4124
Contextual Info: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • C o llec to r-E m itte r Voltage: V ceo = 2 N 4 1 23: 30V 2 N 4 1 24: 25V • C o llec to r D issipation : Pc < m a x = 6 2 5 mW ABSOLUTE MAXIMUM RATINGS Ta=25°C) C haracteristic

utc4124

Abstract: NPN Transistor 1.5A 400V NPN Transistor 1A 400V
Contextual Info: UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed

Contextual Info: 2N4123 4124 M AXIM UM RATINGS Rating S ym bol 2N 4123 2N 4124 C u lle c to r-E m itte r V o lta g e v CEO 30 25 V dc C o lle c to r-B a s e V o lta g e VCBO 40 30 V dc E m itte r-B a s e V o lta g e Vebo 5.0 V dc 'c 200 m Adc Pd 625 5.0 m W cC Pd 1.5 12

A1 GNC

Contextual Info: 24'.+/+0#4; 241&7%6 52'%+ +%#6+10 <5<. '0*#0%'& < /+%41241%'5514 1('45 (#56'4 ':'%76+10 219'45#8'4 /1&' .19 '/+ ('#674'5 Code Compatible with ZiLOG Z80 CPU Two 16-Bit Counter/Timers Extended Instructions Two Enhanced UARTs (up to 512 Kbps

Contextual Info: SPICE MODEL: MMDT4146 MMDT4146 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair A One 4124-Type NPN, One 4126-Type PNP E1 Epitaxial Planar Die Construction B C Ideal for Medium Power Amplification and Switching

J-STD-020A

Abstract: MMDT4146 MMDT4146-7 PNP4126
Contextual Info: MMDT4146 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT4146 Features • · · · · · Complementary Pair One 4124-Type NPN, One 4126-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching

PALC18U8Q

Abstract: CAN I REPLACE PAL 007 E WITH PAL 007 B PALC18U8Q25 PALC18U8 PAL 007 diagrams
Contextual Info: ADV MICRO P L A / P L E / ARRAYS 13E D | 055752k 0020005.7 | PALC18U8Q-25 PALC18U8Q-35 CMOS Universal Programmable Array Logic U.S. Patents 4124899 and 4717912 a "ö > 00 DISTINCTIVE CHARACTERISTICS CMOS technology provides quarter power only 55 mA while matching bipolar speeds

1K34

Abstract: V7-1K34E9 plastic raw material
Contextual Info: REV 9 DOCUMENT 4 0020848 1 FO-50360-L JG-41242 330 C HANGED BY B NA CHECK 1A P R 0 6 AS 60 t .40 i * •" . 16 5 O t t 2X .2 5 0 ± .0 0 3 \ -PLASTIC PLUNGER NOTES - MAXI MUM M E C H A N I C A L D E A D B R E A K OE . 0 0 2 5 MAY BE E X P E C T E D SWITCH CONSTRUCTI ON

Contextual Info: 4124-EPU 4124 24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5% at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm 4124-EPU RF Performance at F = 2.3 GHz

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : PART NO. : 4124-7VYT/TR1 █ Package ▓ CDT1-412-002 ECN : Dimensions: Notes: 1.All dimensions are in millimeters, tolerance is 0.25mm except being specified 2.Lead spacing is measured where the lead emerge from the package

Contextual Info: R A D I ALL TE C H N IC A L DATA SHEET M ic r o w a v e c o m p o n e n ts 18GHz OPTIONS : SMA INDICATOR N /O / TTL DRIVE R 5 7 3 412420 S.P.4T. Page 1/ 2 S W IT C H /SUPP.DIODES R F CHARACTERISTICS | IN U M d th U l- 4 0 - 1 8 GHz 50 Ohms W ftT O FREQUENCY RANGE

Contextual Info: T H I R D ANGLE PROJECTION I ALTERATION I S S U E ITEM CODE ECQE41030TZ / 1 41230TZ 41530TZ / 1 41830TZ 1 / 1 1 42230TZ 1 1 42730TZ 1 1 43330TZ 43930TZ 1 1 / 1 44730TZ 1 1 45630TZ / 1 46830TZ 1 1 48230 TZ 1 1 41040TZ 1 1 41240TZ 1 1 41540TZ 1 1 41840TZ 1 1

Contextual Info: MMDT4146 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair One 4124-Type NPN, One 4126-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package

Contextual Info:  4124 4124 • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm 4124 RF Performance at F = 2.3 GHz

Contextual Info: SIEMENS NPN Silicon Switching Transistor 4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings