TRANSISTOR A56 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2GM sot-23 transistor

Abstract: a56 transistor 2GM H transistor 2GM surface transistor 2GM sot 2gm transistor transistor A56 MMBTA55 2H SOT23 marking code 2GM SOT 23
Contextual Info: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN types available MMBTA55/A56 Pb Lead-free MMBTA05/MMBTA06 APPLICATIONS z Ideal for medium NPN amplification and switching.

transistor f613

Abstract: transistor bc 567
Contextual Info: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

a56 transistor smd

Abstract: smd marking A56 transistor SMD 2h transistor smd A55 a56 transistor smd datasheet SMD TRANSISTOR MARKING 2h A56 smd transistor CMBTA55 CMBTA56 br a55
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

a56 transistor smd

Abstract: SMD TRANSISTOR MARKING 2h transistor SMD 2h a56 transistor a56 transistor smd datasheet marking .A55 transistor A55 smd marking A56 CMBTA55 CMBTA56
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

bulk inner box label ST

Contextual Info: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

CMBTA56

Abstract: a56 transistor CMBTA55
Contextual Info: CDIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 o.ar 2.00 0.60

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

Contextual Info: CDIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P-N-P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBTA55 = 2H CMBTA56 = 2G _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02_ 0.89 0.60 0.40

A56 smd transistor

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H

a56 transistor

Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor PZTA56 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● Collector current DC ：IC=500mA +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power dissipation：PC=1W +0.2 0.90-0.2 +0.1 3.00-0.1

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Contextual Info: L CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor PACKAGE OUTLIN E DETAILS ALL DIM ENSIONS IN mm M arking CMBTA55 = 2H CMBTA56 = 2G 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70 0.50 'S] 2.6 " 2.4 I 1.4

a56 transistor

Abstract: marking as6 CMBTA55 CMBTA56 transistor A56
Contextual Info: COIL CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P -N -P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_ 2.8 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.89" 0.60

gt116

Abstract: a56 transistor
Contextual Info: Transistors I PNP General Purpose Transistor SSTA56/MMSTA56/MPSA56 •Features •External dimensions Units : mm 1 } B V ceo < — 4 0 V (Ic ^ — 1m A) SSTA56 2 ) Com plem ents the SS T A 06/M M S T A 0 6/M PS A 06 . •P a ckag e, marking and packaging specifications

MPS A56 transistor

Abstract: MPS 3117 T164 MPS A13 transistor A42 MPSA42 NPN FTSOA12 MPSA10 MPSA12 MPSA13 Schlumberger
Contextual Info: FAIRCHILD SE MI CO ND UC TO R fi4 . . . 40 V T ' #X P \-'V A IVi^SAiy NPN A m plifier Transistor A Schlum berger C om pany Vceo |g 34^^1,74 D0S73TE -=| y P S A IO F A IR C H IL D dT Min PACKAGE MPSA10 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures

Contextual Info: Transistor m in i Reel PNP — R atin g s m iniB a g Bulk 500 pcs _ Type_ PNP G en eral P urpose BC80S-16 73-8081 BC80E-25 73-8082 BC806-40 73-8083 V ceo Ic 100 f ICS V mA M in-M ax VCE fT M H z P art Marketing 53-8081 53-8082 53-8083 25V 500mA 100-250

Contextual Info: 131,072 W O R D S X 8 BIT C M O S P SEU D O STATIC R A M DESCRIPTIO N The TC518129A Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A Family utilizing one transistor dynamic memory cell with CMOS peripheral circuit provides large capacity , high speed and low power features. The feature includes

a56 transistor

Abstract: a56 equivalent CA56 SMA56
Contextual Info: Cascadable Amplifier 5 to 400 MHz A56/ SMA56 V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT HIGH GAIN-TWO STAGES 26 dB MEDIUM OUTPUT LEVEL: +13.5 dBm TYP. HIGH THIRD ORDER I.P. + 27 dBm (TYP.) Description The A56 RF amplifier is a discrete hybrid design, which uses

a56 transistor

Abstract: CA56 SMA56
Contextual Info: A56 / SMA56 Cascadable Amplifier 5 to 400 MHz Rev. V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT HIGH GAIN-TWO STAGES 26 dB MEDIUM OUTPUT LEVEL: +13.5 dBm TYP. HIGH THIRD ORDER I.P. + 27 dBm (TYP.) Description The A56 RF amplifier is a discrete hybrid design, which uses

a56 transistor

Abstract: CA56 SMA56 transistor A56
Contextual Info: A56/SMA56 5 TO 400 MHz TO-8 CASCADABLE AMPLIFIER • AVAILABLE IN SURFACE MOUNT · HIGH GAIN-TWO STAGES 26 dB TYP. · MEDIUM OUTPUT LEVEL +13.5 dBm (TYP.) · HIGH THIRD ORDER I.P. +27 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 2/02)*

a06 transistor

Abstract: transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468
Contextual Info: G E SOLID STATE Öl ÏVEÏ3Û750Û1 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 The GE/RCA MPS-A 05,06 NPN types and M PS-A 55,56 PNP types are planar epitaxial passivated silicon transistors de­ signed for medium current general purpose amplifier appli­