TRANSISTOR A41 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3R31 0D3DMSD T7R * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: KS621K40A41 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1BOO 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

Contextual Info: 2 3 Û 3 3 C14 0Q00Ö4Ö 362 • CMBT6517 HIGH-VOLTAGE TRANSISTOR N -F -N transistor Marking CMBT6517 = 1Z PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ■C> 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

c102 TRANSISTOR

Abstract: c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor
Contextual Info: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (dual transistors) IMX17 FFeatures 1) Two 2SD1484K chips in an SMT

a144* transistor

Abstract: a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor
Contextual Info: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (isolated dual transistors) IMT17 FFeatures 1) Two 2SA1036K chips in an SMT

TRANSISTOR MARKING A41

Abstract: SGA-4163
Contextual Info: Preliminary Product Description Stanford Microdevices’ SGA-4163 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction

SGA-4163-TR1

Abstract: SGA-4163
Contextual Info: Preliminary Product Description SGA-4163 Stanford Microdevices’ SGA-4163 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

TRANSISTOR MARKING A41

Abstract: SGA-4186 TRANSISTOR a41
Contextual Info: Product Description Stanford Microdevices’ SGA-4186 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current

Contextual Info: Philips Semiconductors bb53^31 0031754 254 NPN 1 GHz video transistors APX Product specification BFQ262; BFQ262A ^ DESCRIPTION M N AflER PHILIPS/DISCRETE b'lE D PINNING NPN silicon epitaxial transistor in a SOT32 TO-126 envelope, with emitter-ballasting resistors and a

TRANSISTOR MARKING A41

Abstract: SGA-4186 34a41
Contextual Info: Product Description Stanford Microdevices’ SGA-4186 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current

Contextual Info: Product Description SGA-4186 Stanford M icrodevices’ SG A-4186 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

2SC1412

Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
Contextual Info: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

BUT92A

Contextual Info: 7 ^ 5 ^537 Q056b57 B • SGS-THOMSON E L iO T O * ! S G S-THOMSON BUT92A 3GE D FAST SWITCHING POWER TRANSISTOR > 10 AT lc = 35A HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE RECTANGULAR SAFE OPERATING AREA WIDE ACCIDENTAL OVERLOAD AREA m fe TO -3

CPM1A-MAD01 manual

Abstract: CPM1-CIF01 cpm1-cif11 omron cpm1a-40cdr-a-v1 CPM1A-MAD01 C200H Pro27 OMRON Operation Manual CPM1A-MAD11 c200h-cn320-eu CPM1A-MAD11 manual OMRON CPM1A-30CDR-A-V1 programming manual
Contextual Info: Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the CPUs ranges from 10, 20, 30, and 40 I/O points with

A41E

Abstract: bf0262a BFQ262 BFQ262A MEA280 BFQ262/BFQ262A
Contextual Info: Philips Semiconductors • bbS3T31 P O S I T S 1* 55H M A P X £ NPN 1 GHz video transistors Product specification BFQ262; BFQ262A N AUER PHILIPS/DISCRETE b'iE D PINNING DESCRIPTION NPN silicon epitaxial transistor In a SOT32 TO-126 envelope, with emitter-ballasting resistors and a

Contextual Info: *OT » * 1990 Philips Com ponents D a te s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e O c to b e r 1d 90 FEATURES • Short channel transistor with high ratio [YfelTCia. • Low noise gain controlled amplifier to 1 GHz. BF988

fmg5a

Abstract: A143E C124E A124e a124* transistor c123* transistor transistor PNP A124e C123J a144* transistor TRANSISTOR a41
Contextual Info: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors UMA10N / FMA10A / IMB17A UMG10N (96-388-A113Z) (94S-811-C113Z) 590 Transistors Emitter common (dual digital transistors) UMA11N / FMA11A FFeatures 1) Two DTA143Z chips in a UMT or

C144* transistor

Abstract: C144E transistor a144* transistor C114y c102 TRANSISTOR 96-415-C114E a114* transistor UMW10 c114e FMW1
Contextual Info: Transistors FMG12 IMD14 96-417-C323T (96-470-IMD14) 576 Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 (94S-389-A41) (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors UMA10N / FMA10A / IMB17A UMG10N

V23990-P589-A41-PM

Abstract: V23990-P589-A vinco flowpim V23990-P589-A41 061W vincotech flowPIM
Contextual Info: V23990-P589-A41-PM target datasheet flowPIM 1 3rd gen 1200V/25A Features flowPIM1 housing ● 3~ rectifier, BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour Target Applications

Contextual Info: Cascadable Amplifier 10 to 400 MHz A411/ SMA411 V3 Features • • • • Product Image LOW NOISE FIGURE: 3.0 dB TYP. HIGH EFFICIENCY: 16 mA at +5 Vdc HIGH THIRD ORDER I.P.: +29 dBm at +8 Vdc (TYP.) MEDIUM OUTPUT LEVEL:+14.5 dBm at +8 Vdc (TYP.) Description