TRANSISTOR A1C Search Results

2N3904 transistor equivalent

Abstract: MJE250 Iron Core Inductor
Contextual Info: SECTION 9 APPENDICES APPENDIX I USING THE TWO TRANSISTOR ANALYSIS Equation 3 relates IA to IG, and note that as α1 + α2 = 1, IA goes to infinity. IA can be put in terms of IK and α’s as follows: DEFINITIONS: 5 Collector current 5 Base current 5 Collector leakage current

Contextual Info: 4bE D • b3b72S4 aOTERôl 1 ■HOTt"T=33-l"] MOTOROLA SC CXSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6193HV Chip PNP Silicon Medium-Power Transistor DMO JfJr.ji Utfuf . .for use in switching and wide-band amplifier applications. DÌSCTG tG • Saturation Voltage — 1.2 Vdc @ 5.0 Ade

da5 diode

Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
Contextual Info: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J ,&, Y" ( 6 P   S ? @5A1C

TC518129BFW

Abstract: D147 ic dip d143 T transistor TC518128 BFL 147
Contextual Info: TOSHIBA TC518129BPL/BFiyBFWI7BFrL-70V/8ÖV/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC 518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power

BC519

Abstract: 81a diode
Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C

Diode Marking C.3

Abstract: da5 diode DA5 marking 5411C
Contextual Info: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C

65A3

Abstract: 5E DIODE marking c-9
Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  I9   P ' 3 81>>5< >? A=1<<5E5<

DA5 diode

Contextual Info: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J Y" /0 6 P   S ? @5A1C

Contextual Info: IPB090N06N3 G IPP093N06N3 G Id\Q  3 Power-Transistor Product Summary Features P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H .( J R ,?>=1G฀,& 1 Y I9 -(

Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G  3 Power-Transistor Product Summary Features V 9H . J P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , R ,?>=1G฀,& +&/ Y P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ (&

DA QG

Contextual Info: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R  , ? >=1G .&- Y" I9 0( 6 P   S ? @5A1C 9>7 C 5=@5A1C

TC518128

Abstract: 518128 TC518128bfl tc518128bftl 80D-80 TC518128B TC518128bfwl A8263
Contextual Info: TOSHIBA TC518128BPiyBFiyBFWiyBFIlr70V/æV/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power

IPP093N06N3G

Contextual Info: IPB090N06N3 G IPP093N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &    I9 .( J 1 Y" -( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#

5411C

Abstract: da5 diode BC519 58a4
Contextual Info: IPB080N06N G IPP080N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J /&/ Y" 0( 6 P   S ? @5A1C 9>7 C

BF993

Abstract: 1S marking transistor transistor bc 132
Contextual Info: TELEFUNKEN ELECTRONIC A1C D ¥i Li(FyMKIKl electronic Creative Technologies • AT20{nb 0005577 BF 993 Marked with: ME - T -31 -=25 N-Channel Dual Gate MOS*Fieldeffect Tetrode •Depletion Mode Applications: Input- and Mlxerstages especially for FM- and VHF TV-tuners up to 300 MHz

a14 Transistor

Contextual Info: TEXAS XNSTR QbE D | 011.1751 0075454 5 | SM61CD64, SMJ61CD64 65.536-W0RD BY 1-BIT STATIC RAMS Separate I/O J D PA C K A G E TOP VIEW AOC A1C A2C A3Q A4Q A5Q A6^ Military Temperature Range . . . -5 5 ° C to 125°C (M Suffix) • • Fast Static Operation

relay Re 04501

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Contextual Info: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997

MB7100

Abstract: MB7152
Contextual Info: October 1989 Edition 2.0 FUJITSU DATA SHEET MB7152Y/H/E SCHOTTKY 16K-BIT PROM SCHOTTKY 16,3 8 4 -B IT DEAP PROM 4096 W ORDS X 4 BITS The Fujitsu MB7152 is high speed schottkyTTL electrically field programmable read only memory organized as 4096 words by 8 bits. With threestate outputs, memory expansion is simple.

AN4502

Abstract: AN4503 AN4505 AN4506 GP200MLS12 IGBT 200A 1200V application induction heating DS5421
Contextual Info: GP200MLS12 GP200MLS12 IGBT Chopper Module Preliminary Information DS5421-1.5 April 2001 FEATURES • Internally Configured With Lower Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

ultrasonic piezo speaker

Abstract: UM66 ultrasonic receiver Single melody generator UM66* melody generator UM66T ultrasonic piezo UM66 melody generator ultrasonic remote control encoder decoder UM66T Series
Contextual Info: UNITE» MICROELECTRONICS U M 6 6 T S e r íe s 3DE D 'iBESflSE 00DD2S1 3 Simple Melody Generator Features Pin Configuration • 62-note ROM memory 1 ■ 1.3V to 3.3V operating voltage and low power con­ UM66 T xxx 85xx sumption ■ Dynamic speaker can be driven w ith an external NPN

MBM27C64-30

Abstract: MBM27C64-20 MBM27C64-25 Fujitsu MBM27C64 MBM27C64
Contextual Info: October 1992 Edition 2.0 FUJITSU DATA SHEET MBM27C64-20/-25/-30 CMOS 64K-BIT UV EPROM CMOS 65,536-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM27C64 is a high speed 65,536-bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM . It is especially well suited for

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

BECKMAN helipot

Abstract: Helipot Allen-Bradley CARBON COMP RESISTORS CS4725 1901-0040 dm74ls173n ITT TCA 700 Y 1854-0221 CB2225 B 1820-1199
Contextual Info: M odel 5004A Replaceable Parts SE CTIO N VI REPLACEABLE PARTS 6-1. INTRODUCTION 6 -2 . This section contains in fo rm a tio n fo r o rd e rin g re p la c e m e n t parts. Table 6 -1 lists parts in alp h an u m erical o rd e r o f th e ir re fe re n c e designators and indicates th e d escription and HP Part