518128 Search Results

MSM518128

Abstract: MSM518128L
Contextual Info: O K I Semiconductor MSM5 18128/L_ 131,072-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The M SM 518128/L achieves high integration, high-speed operation, and low-power

MCM51L8128-10

Abstract: MCM518128SF10
Contextual Info: o o mu Order th is data sheet by 518128/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C M 518128 M C M 51L8128 M CM51LV8128 1 2 8 K x 8 Bit CM OS Pseudo Static Random Access Memory The 518128 is a 1,048,576 bit low-power pseudo-static random access memory or­

NN518128

Abstract: nn514405 518128
Contextual Info: 518128 seríes Fast Page Mode CMOS 128Kx8bit Dynamic RAM NPN>a DESCRIPTION The N N 518128 is a high performance C M OS Dynamic Random Access Memory organized as 131,072 words by 8 bits. The NN 518128 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in

Contextual Info: 131.072 W O R D S x 8 BIT C M O S PSEUDO ST ATIC RAM D ES C R IP T IO N The T C 5 1 S1 2 8 A F am ily is a 1M b il h igh ¿peed C M O S P seudo S tatic RAM organ ized a s 131,072 words by S bits. The T C 518128A F am ily u tilizin g one tran sisto r dyn am ic m em ory cell with CM O S

518128

Contextual Info: O K I Sem iconductor MSM5 1 8 1 2 8 /L _ E2G 0 012 -17-41 131,072-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM 518128/L achieves high integration, high-speed operation, and low-power

518128

Abstract: 518128apl TC518128
Contextual Info: TOSHIBA 518128APL/AFL/AFWL-80LV/10LV/12LV 518128AFTLS0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 2 8 A -L V is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s b y 8 bits. The T C 5 1 8 1 2 8 A -L V

Contextual Info: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL 518128 CPL / CFL / CFWL / CFTL - 70V 518128 CPL / CFL / CFWL / CFTL -80V 518128 CPL / CFL / CFWL / CFTL -10V DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

658128

Abstract: KM658128 TC518128 HM658128ALP-12 HM658128ALFP-8 HM658128P-12 tc518128apl HM658128ADP-12 HM658128ALP-8 KM658128-10L
Contextual Info: - 152 IM P s e u d o A X m & ÄSieH ít £ ca TAAC ns TCAC max (ns) V S t a t i c * V 7 R A M (1 31 0 7 2 x 8 ) 3 2 PI N ft TOE max (ns) TOH min (ns) TOD max (ns) TWP (ns) TDS min (ns) 6 5 8 1 2 8 A TDH min (ns) TWD min (ns) TWR max (ns) V D D or V CC

Contextual Info: O K I Semiconductor MSM5 1812 8 /L_ 131,072-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 518128/L achieves high integration, high-speed operation, and low-power

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

Contextual Info: TOSHIBA 518128CPL/CSPL/CFL/CFWL/CFIL-70/80/10 518128CPL/CSPL/CFL/CFWL/CFIL-70L/80L/10L SILICON GATE CMOS PRELIMINARY 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 28C is a 1M bit high speed C M O S pse udo static RAM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 28C utilizes

Contextual Info: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The 518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The 518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS

TC518128AF-10

Abstract: TC518128APL-10
Contextual Info: TOSHIBA L O G I C / M E M O R Y M êE D ^0=17540 D D 5 2 D S 3 7 - m 131,072 W O R D S x 8 BIT C M O S PSEUDO S T A T IC RAM D E SC R IP TIO N T he 518128A Fam ily is a 1M b it high ¿peed CMOS Pseudo S tatic RAM organized as 131,072 words by 8 bits, T h e 518128A F am ily u tilizing one tran sisto r dynam ic m em ory cell w ith CMOS

TC518128CFL

Contextual Info: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL 518128CFL/CFWL/CFTL-70V, -80V DATA SILICON GATE CM O S TENTATIVE 131,072 W O R D S X 8 BIT CM O S PSEUDO STATIC RAM DESCRIPTION The 518128C-V Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC518128

Abstract: 518128 TC518128bfl tc518128bftl 80D-80 TC518128B TC518128bfwl A8263
Contextual Info: TOSHIBA 518128BPiyBFiyBFWiyBFIlr70V/æV/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The 518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The 518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power

AN DF2-50

Abstract: 2SA1015
Contextual Info: TOSHIBA 518128CPL/CFL/CFWL/CFTL-70V,-80V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 518128CPIVCFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory PSRAM

Contextual Info: TOSHIBA 518128APL/AFiyAFWL80LV/10LV/12LV 518128AFILS0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description 518128A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. 518128A-LV

Contextual Info: TOSHIBA T C 5 1 8 1 2 8 B P iy B S P I/B F iy B F W iy B F T L - 7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W L /B F IIr 7 0 L /8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description 518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. 518128B utilizes

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information