TCH724A Search Results

tc528257

Abstract: W640 SFC39 DIN 41162
Contextual Info: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS m ultiport m em ory equipped with a 262,144-words by 8 -bits dynam ic random access mem ory RAM port and a 512-words by 8 -bits static serial access memory (SA M ) port. The

TCD201

Abstract: TCD201C KMSW
Contextual Info: TOSHIBA {LOGIC /MEMO RY } 9097248 DE ^ hl TOSHIBA ’ □ ^7340 OODTSflS t. CLOGIC/MEMORY C C D A RE A IMAGE S E NSOR C C D Charge Coupled Device) 67C TCD201C 09585 T-41-55 The TCD201C is a high resolution and high sensitivity CCD area image sensor which has 560(40x14) picture elements.

Contextual Info: TOSHIBA T C74VH CT574AF/AFW/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT574AF, TC74VHCT574AFW, TC74VHCT574AFT OCTAL D-TYPE FLIP-FLOP WITH 3 - STATE OUTPUT The TC74VHCT574A is an advanced high speed CMOS OCTAL FLIP-FLOP with 3 -STATE OUTPUT fabricated

Contextual Info: TOSHIBA TC514273BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514273BJ is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514273BJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques

74ALS132

Contextual Info: - TC74VHC132F/FN/FS QUAD 2 -INPUT SCHMITT NAND GATE The TC74VHC132 is an advanced high speed CMOS 2-INPUT SCHMITT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low

Contextual Info: TOSHIBA THM3640A0S/SG -60/70 4,194,304 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 3640A0 is a 4,194,304 word by 36 bit dynamic RAM m odule which is assem bled with 9 TC5116400J devices on the printed circuit board. This m odule is optim ized for applications which require high

thm321000AS

Contextual Info: TOSHIBA THM321000AS/ASG -60/70/80 1,048,576 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 321000A is a 1,048,576 w ord by 32 bit dynam ic RAM m odule w hich is assem bled with eight TC514400A SJ devices on the printed circuit board. This m odule can be used as well as 2,097,152 word by 16

Contextual Info: TOSHIBA cIOtì 7 2 4 f l 0Q2R00S 370 TC58A040F PRELIMINARY 4Mbit 4M x 1 BIT CMOS AUDIO NAND EEPROM Description The TC58A040 is a single 5 volt 4M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits x 128 pages x 128 blocks.

Contextual Info: m 'iD,i754fi DD2fi73C1 C141 m- TOSHIBA TC59R0808HK PRELIMINARY 1,048,576 WORD x 8 BITS RAMBUS DYNAMIC RAM Description The TC59R0808HK Rambus Dynamic RAM DRAM is a next-generation high-speed CMOS DRAM with a 1,048,576 x 8 bits organization and built-in slave logic. The 16,384 sense amps of the DRAM core are used as cache to achieve data

Contextual Info: TOSHIBA T C 5 1 8 1 2 8 B P iy B S P I/B F iy B F W iy B F T L - 7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W L /B F IIr 7 0 L /8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518128B utilizes

Contextual Info: TOSHIBA TC74V H CT540,541AF/AFW/AFT TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT540AF, TC74VHCT540AFW, TC74VHCT540AFT TC74VHCT541AF, TC74VHCT541AFW, TC74VHCT541AFT OCTAL BUS BUFFER TC74VHCT540AF/A F W /AFT TC74VHCT541 F A /A F W /AFT

Contextual Info: INTEGRATED TO SHIBA CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74LCX74F, TC 74LC X74FN , TC 74LC X74FS DATA SILICON MONOLITHIC TENTATIVE DATA LO W V O L T A G E D U A L D - T Y P E F L IP F L O P W IT H 5 V T O L E R A N T IN P U T S A N D O U T P U T S

Contextual Info: SILICON M O NOLITHIC T O SH IBA C M O S DIGITAL INTEGRATED CIRCUIT TC7SH14F/FU SCHMITT INVERTER T h e T C 7 S H 1 4 is an a d va n ce d h ig h spe e d C M O S S C H M IT T IN V E R T E R fab ricated w ith silicon g a te C M O S te c h n o lo gy. It ach ie ve s th e h ig h sp e e d o p e ra tio n sim ilar to e q u ivale n t

Contextual Info: SILICON MONOLITHIC TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7WH241FU TENTATIVE DATA UNDER DEVELOPMENT DUAL BUS BUFFER NON INVERTED, 3-STATE OUTPUTS T h e T C 7 W H 2 4 1 Is a n a d v a n c e d h ig h speed C M O S D U A L BUS BUFFERS fa b r ic a te d w it h silicon g a te C M O S

Contextual Info: 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynam ic RAM organized 524,288 word by 9 bit. The TC514900A JLL utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit