IPP080N06N Search Results

IEC61249-2-21

Abstract: PG-TO220-3 080N06N
Contextual Info: IPB080N06N G OptiMOS Power-Transistor IPP080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature

080N06N

Abstract: d80 DIODE PG-TO220-3
Contextual Info: IPB080N06N G OptiMOS Power-Transistor IPP080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 m: 80 A • 175 °C operating temperature • Avalanche rated

5411C

Abstract: da5 diode BC519 58a4
Contextual Info: IPB080N06N G IPP080N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J /&/ Y" 0( 6 P   S ? @5A1C 9>7 C

PG-TO220-3

Abstract: IPP080N06N d80 DIODE 65V8
Contextual Info: IPB080N06N G OptiMOS Power-Transistor IPP080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature

Contextual Info: IPB080N06N G OptiMOS Power-Transistor IPP080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature

S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)